Patents by Inventor Feng Jen Lee

Feng Jen Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Organometallic ruthenium and osmium source reagents for chemical vapor deposition
    Patent number: 6303809
    Abstract: A series of organometallic complexes of the general formula [M(CO)2L2] was provided, wherein M is ruthenium or osmium metal, and L is a &bgr;-diketonate ligand RC(O)CHC(O)R1 where each of R and R1 is independently selected from the group consisting of atoms of the element, C, H, O and F. These ruthenium and osmium complexes possess enhanced volatility and thermal stability characteristics, and are very suitable for CVD applications. Also disclosed are CVD methods by using these ruthenium or osmium complexes as source reagents for deposition of Ru, Os, RuO2, OsO2, and other Ru- or Os-containing films such as mixed metal oxide materials BaRuO3, SrRuO3, Sr2RuO4 and Bi2Ru2O7 or bimetallic alloys Pt/Ru and Pd/Ru.
    Type: Grant
    Filed: December 10, 1999
    Date of Patent: October 16, 2001
    Inventors: Yun Chi, Feng Jen Lee, Chao-Shiuan Liu