Abstract: A development system and a method of an offline software-in-the-loop simulation are disclosed. A common firmware architecture generates a chip control program. The common firmware architecture has an application layer and a hardware abstraction layer. The application layer has a configuration header file and a product program. A processing program required by a peripheral module is added to the hardware abstraction layer during compiling. The chip control program is provided to a controller chip or a circuit simulation software to be executed to control the product-related circuit through controlling the peripheral module.

Abstract: A method of removing metal ions is provided, which includes contacting a metal removal composition with a solution containing metal ions for removing the metal ions from the solution, wherein the metal removal composition includes a polymer with a chemical structure of: wherein Q is a quinoline-based group, n=90˜450, o=10˜50, and p=0˜20. The metal removal composition has a type of fiber or film. In addition, the metal removal composition has a porosity of 60% to 90%.

Abstract: A cable structure including at least one conductor, a cladding layer, a low dielectric constant (Dk) resin layer, and a shielding layer is provided. The cladding layer includes a low Dk adhesive layer and two insulation layers. The low Dk adhesive layer is coated around the at least one conductor. The two insulation layers respectively are adhered to two opposite surfaces of the low Dk adhesive layer. Each of the low Dk adhesive layers and the two insulation layers has a dielectric constant between 1.3 and 3. The low Dk resin layer is adhered to the cladding layer through a first adhesive layer. The shielding layer is adhered to the low Dk resin layer through a second adhesive layer. The at least one conductor is disposed in the low Dk adhesive layer and positioned between the two insulation layers.

Abstract: A cable structure including at least one conductor, a cladding layer, a low dielectric constant (Dk) resin layer, and a shielding layer is provided. The cladding layer includes a low Dk adhesive layer and two insulation layers. The low Dk adhesive layer is coated around the at least one conductor. The two insulation layers respectively are adhered to two opposite surfaces of the low Dk adhesive layer. Each of the low Dk adhesive layers and the two insulation layers has a dielectric constant between 1.3 and 3. The low Dk resin layer is adhered to the cladding layer through a first adhesive layer. The shielding layer is adhered to the low Dk resin layer through a second adhesive layer. The at least one conductor is disposed in the low Dk adhesive layer and positioned between the two insulation layers.

Abstract: A method of removing metal ions is provided, which includes contacting a metal removal composition with a solution containing metal ions for removing the metal ions from the solution, wherein the metal removal composition includes a polymer with a chemical structure of: wherein Q is a quinoline-based group, n=90˜450, o=10˜50, and p=0˜20. The metal removal composition has a type of fiber or film. In addition, the metal removal composition has a porosity of 60% to 90%.

Abstract: A method for preparing a compound and a method for preparing a polymer employing the same are provided. The method for preparing a compound includes reacting a compound having a structure represented by Formula (I) with a compound having a structure represented by Formula (III) in the presence of a compound having a structure represented by Formula (II) to obtain a compound having a structure represented by Formula (IV) wherein Ar1 is substituted or unsubstituted aryl group; X is —O—, —S—, or —NH—; R1 is independently hydrogen or C1-6 alkyl group; R2 is hydroxyl group, C1-6 alkyl group, phenyl group, or tolyl group; and R3 is independently C1-6 alkyl group, C5-8 cycloalkyl group, or C2-6 alkoxyalkyl group.

Abstract: A method for preparing a compound and a method for preparing a polymer employing the same are provided. The method for preparing a compound includes reacting a compound having a structure represented by Formula (I) with a compound having a structure represented by Formula (III) in the presence of a compound having a structure represented by Formula (II) to obtain a compound having a structure represented by Formula (IV) wherein Ar1 is substituted or unsubstituted aryl group; X is —O—, —S—, or —NH—; R1 is independently hydrogen or C1-6 alkyl group; R2 is hydroxyl group, C1-6 alkyl group, phenyl group, or tolyl group; and R3 is independently C1-6 alkyl group, C5-8 cycloalkyl group, or C2-6 alkoxyalkyl group.