Abstract: This application provides a live streaming processing method performed by an electronic device. The method includes: displaying a live streaming room, the live stream room having a host account, a host sub-account and multiple viewer accounts, the host sub-account being used for assisting the host account of the live streaming room in operation; receiving real-time live streaming data of the live streaming room, and displaying a live streaming content on a live streaming room page according to the real-time live streaming data, the real-time live streaming data collected from the host account and the viewer accounts; and displaying, in response to a live streaming room operation of the host sub-account, an operation result of the live streaming room operation of the host sub-account in the live streaming room, wherein the operation result of the live streaming room operation updates the live streaming content on the live streaming room page.

Abstract: A plant type related protein, and a coding gene and an application thereof are provided. The protein is: (a) a protein consisting of the amino acid sequence of SEQ ID NO: 1; (b) a SEQ ID NO: 1-derived protein having substitution, deletion, and/or addition of an amino acid residue on the sequence of SEQ ID NO: 1, and related to the plant type and/or inactivation of a plant brassinolide type, or (c) a protein having more than 80% homology to the sequence of SEQ ID NO: 1 and related to a plant type and inactivation of a plant brassinolide type. The protein and its coding gene have very important value in improving crop production, improving the visual enjoyability of a green plant, implementing simple cultivation of a plant and improving the breeding efficiency, and has a broad prospective in genetic improvement of a plant, new variety cultivation and an application.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes providing a semiconductor substrate including a transistor and a dummy gate disposed on the transistor, removing the dummy gate on the transistor, performing treatment using hydrogen (H2) on a surface of the semiconductor substrate, so as to remove residue materials left behind from the removal of the dummy gate, and forming a metal gate on the transistor.

Abstract: A plant type related protein, and a coding gene and an application thereof are provided. The protein is: (a) a protein consisting of the amino acid sequence of SEQ ID NO: 1; (b) a SEQ ID NO: 1-derived protein having substitution, deletion, and/or addition of an amino acid residue on the sequence of SEQ ID NO: 1, and related to the plant type and/or inactivation of a plant brassinolide type, or (c) a protein having more than 80% homology to the sequence of SEQ ID NO: 1 and related to a plant type and inactivation of a plant brassinolide type. The protein and its coding gene have very important value in improving crop production, improving the visual enjoyability of a green plant, implementing simple cultivation of a plant and improving the breeding efficiency, and has a broad prospective in genetic improvement of a plant, new variety cultivation and an application.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes providing a semiconductor substrate including a transistor and a dummy gate disposed on the transistor, removing the dummy gate on the transistor, performing treatment using hydrogen (H2) on a surface of the semiconductor substrate, so as to remove residue materials left behind from the removal of the dummy gate, and forming a metal gate on the transistor.

Abstract: A method is provided for fabricating an MOS transistor. The method includes providing a semiconductor substrate; and forming a ploy silicon dummy gate structure having a high-K gate dielectric layer, a high-K gate dielectric protection layer containing nitrogen and a poly silicon dummy gate on the semiconductor substrate. The method also includes forming a source region and a drain region in the semiconductor substrate at both sides of the poly silicon dummy gate structure. Further, the method includes removing the poly silicon dummy gate to form a trench exposing the high-K gate dielectric protection layer containing nitrogen and performing a nitrogen treatment process to repair defects in the high-K gate dielectric protection layer containing nitrogen caused by removing the poly silicon dummy gate. Further, the method also includes forming a metal gate structure in the trench.

Abstract: A semiconductor device and manufacture method thereof include a silicide material formed on a source region and a drain region on opposite sides of a gate, wherein the gate having sidewalls on both side surfaces is formed on a substrate. The gate has a first sidewall spacer and a second sidewall spacer on each sidewall, the first spacer has a horizontal portion and a vertical portion, the horizontal portion is located between the second sidewall spacer and the substrate, the vertical portion is located between the second sidewall spacer and the sidewalls. A protecting layer is selectively deposited on the silicide material.

Abstract: A method is provided for fabricating an MOS transistor. The method includes providing a semiconductor substrate; and forming a ploy silicon dummy gate structure having a high-K gate dielectric layer, a high-K gate dielectric protection layer containing nitrogen and a poly silicon dummy gate on the semiconductor substrate. The method also includes forming a source region and a drain region in the semiconductor substrate at both sides of the poly silicon dummy gate structure. Further, the method includes removing the poly silicon dummy gate to form a trench exposing the high-K gate dielectric protection layer containing nitrogen and performing a nitrogen treatment process to repair defects in the high-K gate dielectric protection layer containing nitrogen caused by removing the poly silicon dummy gate. Further, the method also includes forming a metal gate structure in the trench.

Abstract: The present invention clones the second RNA recognition motif (RRM2) gene of FCA-? gene in Brassica napus, and transforms the RRM2 domain gene into cotton by transgenic method. The transgenic line exhibits characteristics of yield increasing, fiber quality enhancement and senescence resistance. The results indicate that the RRM2 domain gene can be used for improving traits in industrial crops.

Abstract: A semiconductor device and manufacture method thereof include a silicide material formed on a source region and a drain region on opposite sides of a gate, wherein the gate having sidewalls on both side surfaces is formed on a substrate. The gate has a first sidewall spacer and a second sidewall spacer on each sidewall, the first spacer has a horizontal portion and a vertical portion, the horizontal portion is located between the second sidewall spacer and the substrate, the vertical portion is located between the second sidewall spacer and the sidewalls. A protecting layer is selectively deposited on the silicide material.