Patents by Inventor Feng Liang

Feng Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10563119
    Abstract: Embodiments of the present disclosure are directed to a method of producing a viscoelastic surfactant (VES) fluid, the VES fluid comprising desulfated seawater. The method of producing the VES fluid comprises adding an alkaline earth metal halide to seawater to produce a sulfate precipitate. The method further comprises removing the sulfate precipitate to produce the desulfated water. The method further comprises adding a VES and one or more of a nanoparticle viscosity modifier or a polymeric modifier to the desulfated seawater. Other embodiments are directed to VES fluids that maintain a viscosity greater than 10 cP at temperatures above 250° F.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: February 18, 2020
    Assignee: Saudi Arabian Oil Company
    Inventors: Leiming Li, Feng Liang, Tao Chen
  • Publication number: 20200048529
    Abstract: A system and method for hydraulic fracturing including mixing seawater with an additive to precipitate sulfate from the seawater and mixing a flocculating agent with the seawater to agglomerate the sulfate precipitates.
    Type: Application
    Filed: October 18, 2019
    Publication date: February 13, 2020
    Applicant: Saudi Arabian Oil Company
    Inventors: Leiming Li, Hejian Sun, Feng Liang, Mohammed A. Bataweel
  • Patent number: 10550314
    Abstract: Embodiments for a high temperature fracturing fluid comprise an aqueous fluid, carboxyl-containing synthetic polymer, metal oxide nanoparticles having a particle size of 0.1 to 500 nanometers, and a metal crosslinker which crosslinks the carboxyl-containing synthetic polymers to form a crosslinked gel, wherein the metal oxide nanoparticles are dispersed within the crosslinked gel.
    Type: Grant
    Filed: May 18, 2016
    Date of Patent: February 4, 2020
    Assignee: Saudi Arabian Oil Company
    Inventors: Feng Liang, Ghaithan Al-Muntasheri, Leiming Li
  • Patent number: 10547999
    Abstract: A data transmission method is performed by at least one processor of a terminal, and includes displaying one or more messages, each of the one or more messages including a data file, based on a touch and hold input on one of the one or more messages, displaying an option for displaying one or more icons respectively indicating one or more hardware devices capable of executing the data file of the one of the one or more messages, based on a touch input on the option, displaying the one or more icons respectively indicating the one or more hardware devices, and based on a touch input on one of the one or more icons indicating one of the one or more hardware devices, sending, to the one of the one or more hardware devices, the data file of the one of the one or more messages.
    Type: Grant
    Filed: July 11, 2018
    Date of Patent: January 28, 2020
    Assignee: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Sui Peng Qi, Shi Hai Cheng, Ming Yong Lin, Liang Liang Fan, Yi Fu Wang, Zhi Yong Yang, Jin Gui Wang, Lu Lu Xie, Feng Liu, Xiao Hui Yao, Dun Wei Wu, Qing Zhu Zhong
  • Patent number: 10544347
    Abstract: A method for formulating a hydraulic fracturing fluid composition with increased viscosity and resistance to degradation at increased temperature and pressure. The method includes preparing an alkanolamine borate formulation compatible for mixing with a hydraulic fracturing fluid comprising polysaccharides; preparing the hydraulic fracturing fluid comprising polysaccharides; and mixing the alkanolamine borate formulation with the hydraulic fracturing fluid, such that the alkanolamine borate formulation causes crosslinking of the hydraulic fracturing fluid.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: January 28, 2020
    Assignee: Saudi Arabian Oil Company
    Inventors: B. Raghava Reddy, Feng Liang, Leiming Li
  • Publication number: 20200025706
    Abstract: Methods and systems for identifying contamination of an electrochemical sensor (10) and cleaning the electrochemical sensor (10) are provided. A method may comprise scanning the sensor (10) for the first time using CV to generate a reference set of readings; scanning the sensor (10) for the second time after the sensor (10) has been employed; comparing a second set of readings from the second CV scan to the reference set of readings; when the second set of readings is different from the reference set of readings, determining that the sensor (10) potential has shifted; scanning the sensor (10) for the third time to clean one or more elements of the sensor (10); scanning the sensor (10) for the fourth time; comparing a fourth set of readings from the fourth CV scan to the second set of readings; and determining that the potential of the sensor (10) has shifted due to pollution of the sensor (10), and/or that the sensor (10) can be further cleaned.
    Type: Application
    Filed: August 31, 2016
    Publication date: January 23, 2020
    Inventors: Yuzhong YU, Ling LIU, Feng LIANG
  • Publication number: 20200024505
    Abstract: The present application relates to methods and systems for mitigating condensate banking. In some embodiments, the methods and systems involve altering the wettability of a rock formation in the vicinity of a wellbore for a gas condensate reservoir.
    Type: Application
    Filed: August 22, 2019
    Publication date: January 23, 2020
    Inventors: Mohammed Sayed, Feng Liang, Hooisweng Ow, Jason Cox
  • Publication number: 20200025733
    Abstract: The present invention relates to a method for detecting a gas concentration using a gas detection device, comprising: determining a first relationship between a baseline drift of the gas detection device with respect to a gas concentration and an environmental temperature and performing, based on the baseline drift of the gas detection device with respect to a gas having a first temperature, a first compensation on a gas concentration output value of the gas having the first temperature determined by the gas detection device. With such a method, a gas concentration check result is more accurate, and the gas detection device can be applied to a wider range of application scenarios.
    Type: Application
    Filed: July 19, 2019
    Publication date: January 23, 2020
    Inventors: Ling LIU, Xiaoyi YAN, Qinghui MU, Na WEI, Lei XIAO, Yang ZHANG, Huiping YAO, Feng LIANG
  • Publication number: 20200027803
    Abstract: An interposer may comprise a metal layer above a substrate. A dam or a plurality of dams may be formed above the metal layer. A dam surrounds an area of a size larger than a size of a die which may be connected to a contact pad above the metal layer within the area. A dam may comprise a conductive material, or a non-conductive material, or both. An underfill may be formed under the die, above the metal layer, and contained within the area surrounded by the dam, so that no underfill may overflow outside the area surrounded by the dam. Additional package may be placed above the die connected to the interposer to form a package-on-package structure.
    Type: Application
    Filed: September 30, 2019
    Publication date: January 23, 2020
    Inventors: Chun-Lin Lu, Kai-Chiang Wu, Yen-Ping Wang, Shih-Wei Liang, Ching-Feng Yang
  • Publication number: 20200027878
    Abstract: A method includes forming a gate structure, a first edge structure and a second edge structure on a semiconductor strip. The method includes forming a first source/drain feature between the gate structure and the first edge structure; and a second source/drain feature between the gate structure and the second edge structure. A distance between the gate structure and the first source/drain feature is from about 1.5 to about 4.5 times greater than a distance between the gate structure and the second source/drain feature. The method includes implanting a buried channel in the semiconductor strip. A top surface of the buried channel is spaced from a top surface of the semiconductor strip. A bottom surface of the buried channel is closer to the top surface of the semiconductor strip than a bottom surface of the first source/drain feature. A dopant concentration of the buried channel is highest under the gate structure.
    Type: Application
    Filed: September 27, 2019
    Publication date: January 23, 2020
    Inventors: Shu Fang FU, Chi-Feng HUANG, Chia-Chung CHEN, Victor Chiang LIANG, Fu-Huan TSAI
  • Patent number: 10541577
    Abstract: An electric machine may include an adjacent pair of laminations each defining pockets having permanent magnets arranged therein to form magnetic poles. The laminations may be stacked in a pole-skewed fashion to form a portion of a rotor. A stator may surround the rotor. The machine may further include a separator lamination between the adjacent pair defining cutout portions having a shape based on a superposition of shapes of the pockets to increase a reluctance of leakage paths between the permanent magnets.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: January 21, 2020
    Assignee: Ford Global Technologies, LLC
    Inventors: Franco Leonardi, Mark Allan Lippman, Michael W. Degner, Feng Liang
  • Patent number: 10541793
    Abstract: Methods and apparatuses of mitigating interference in a heterogeneous network using an inter-cell interference coordination are provided. An interference control server assigns, for each of the UE groups, a set of almost blank subframes (ABS) or non-preferred sub-bands specific to the corresponding one of the UE groups based on the UE group interference relationship and a resource demand for each of the UE groups. A base station assigns a plurality of sets of ABS (or non-preferred sub-bands) to reuse time-domain (or frequency-domain) resources.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: January 21, 2020
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Jen-Feng Huang, Ching-Feng Liang, You-En Lin
  • Publication number: 20200017757
    Abstract: Embodiments of the present disclosure are directed to a method of producing a viscoelastic surfactant (VES) fluid, the VES fluid comprising desulfated seawater. The method of producing the VES fluid comprises adding an alkaline earth metal halide to seawater to produce a sulfate precipitate. The method further comprises removing the sulfate precipitate to produce the desulfated water. The method further comprises adding a VES and one or more of a nanoparticle viscosity modifier or a polymeric modifier to the desulfated seawater. Other embodiments are directed to VES fluids that maintain a viscosity greater than 10 cP at temperatures above 250° F.
    Type: Application
    Filed: September 24, 2019
    Publication date: January 16, 2020
    Applicant: Saudi Arabian Oil Company
    Inventors: Leiming Li, Feng Liang, Tao Chen
  • Publication number: 20200017758
    Abstract: Embodiments of the present disclosure are directed to a method of producing a viscoelastic surfactant (VES) fluid, the VES fluid comprising desulfated seawater. The method of producing the VES fluid comprises adding an alkaline earth metal halide to seawater to produce a sulfate precipitate. The method further comprises removing the sulfate precipitate to produce the desulfated water. The method further comprises adding a VES and one or more of a nanoparticle viscosity modifier or a polymeric modifier to the desulfated seawater. Other embodiments are directed to VES fluids that maintain a viscosity greater than 10 cP at temperatures above 250° F.
    Type: Application
    Filed: September 24, 2019
    Publication date: January 16, 2020
    Applicant: Saudi Arabian Oil Company
    Inventors: Leiming Li, Feng Liang, Tao Chen
  • Patent number: 10535610
    Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a substrate having a scribe line region. A material layer is formed on the scribe line region and has a rectangular region defined therein. The rectangular region has a pair of first edges parallel with a widthwise direction of the scribe line region and a pair of second edges parallel with a lengthwise direction of the scribe line region. A pair of first alignment features is formed in the material layer along the first edges, and a pair of second alignment features is formed in the material layer along the second edges. The space between the pair of first alignment features is larger than a space between the pair of the second alignment features.
    Type: Grant
    Filed: June 7, 2018
    Date of Patent: January 14, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Feng-Yi Chang, Fu-Che Lee, Yi-Wang Zhan, Chia-Liang Liao, Yu-Cheng Tung, Chien-Hao Chen, Chia-Hung Wang
  • Patent number: 10535686
    Abstract: A semiconductor device includes a substrate, wherein the substrate includes a channel region. The semiconductor device further includes an isolation feature in the substrate. The isolation feature includes a first portion in the substrate, and a second portion extending along a top surface of the substrate. The second portion partially covers the channel region. The semiconductor device further includes a gate structure over the substrate, wherein the gate structure partially covers the second portion of the isolation feature.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: January 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Victor Chiang Liang, Fu-Huan Tsai, Fang-Ting Kuo, Meng-Chang Ho, Yu-Lin Wei, Chi-Feng Huang
  • Publication number: 20200008841
    Abstract: The present invention discloses a spinal surgical instrument and a method of guiding thereof. The spinal surgical instrument is operated with a precedent device. The precedent device includes at least one guiding unit. The spinal surgical instrument includes an operating element, an extending element, a handling element and a guide element. One end of the extending element connects to the operating element. The other end of the extending element connects to the handling element. The guide element is disposed on the extending element and includes at least one guide hole. The operating element is guided to the precedent device by the passing of the guide hole along the guiding unit.
    Type: Application
    Filed: September 16, 2019
    Publication date: January 9, 2020
    Inventors: Yi-Chun SU, Sherwin HUA, Hsiang-Ming HUANG, Huang-Chien LIANG, Chieh-Feng LU, Huang-Chi CHEN
  • Patent number: 10529711
    Abstract: A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: January 7, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Fu-Huan Tsai, Hsieh-Hung Hsieh, Tzu-Jin Yeh, Han-Min Tsai, Hong-Lin Chu
  • Patent number: 10529861
    Abstract: FinFET structures and methods of forming the same are disclosed. A device includes a semiconductor fin. A gate stack is on the semiconductor fin. The gate stack includes a gate dielectric on the semiconductor fin and a gate electrode on the gate dielectric. The gate electrode and the gate dielectric have top surfaces level with one another. A first inter-layer dielectric (ILD) is adjacent the gate stack over the semiconductor fin. The first ILD exerts a compressive strain on the gate stack.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: January 7, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chang Lin, Wei-Ting Chien, Chun-Feng Nieh, Wen-Li Chiu, Huicheng Chang, Chun-Sheng Liang
  • Publication number: 20200006507
    Abstract: A junction gate field-effect transistor (JFET) includes a substrate, a source region formed in the substrate, a drain region formed in the substrate, a channel region formed in the substrate, and at least one gate region formed in the substrate. The channel region connects the source and drain regions. The at least one gate region contacts one of the source and drain regions at an interface, and the at least one gate region is isolated from the other of the source and drain regions. A dielectric layer covers the interface while exposing portions of the gate region and the one of the source and drain regions.
    Type: Application
    Filed: September 13, 2019
    Publication date: January 2, 2020
    Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang