Abstract: An ESD protection circuit is coupled to a first pad and includes an ESD detection circuit, a P-type transistor, an N-type transistor, and a discharge circuit. The ESD detection circuit determines whether an ESD event occurs on the first pad to generate a detection signal at a first node. The P-type transistor comprises a source coupled to the first pad, a drain coupled to a second node, and a gate coupled to the first node. The N-type transistor comprises a drain coupled to the second node, a source coupled to a ground, and a gate coupled to a second pad. The discharge circuit is coupled between the first pad and the ground and controlled by a driving signal at the second node. When the ESD protection circuit is in an operation mode, the first pad receives a first voltage, and a second pad receives a second voltage.

Abstract: The present disclosure provides an electronic device including a first sensing unit, a first transistor coupled to the first sensing unit, a second transistor coupled to the first transistor, a second sensing unit, a third transistor coupled to the second sensing unit, a fourth transistor coupled to the third transistor, a first signal line coupled to the second transistor and the fourth transistor, and a power line coupled to the first transistor and the third transistor, in which the power line is disposed between the first sensing unit and the second sensing unit.

Abstract: A display panel includes a first substrate, a second substrate, and an electrophoretic layer and a conductive adhesive layer that are located between the first substrate and the second substrate. The first substrate includes a common electrode layer and a color light-filtering layer that are stacked. The second substrate includes a pixel electrode layer. The electrophoretic layer is disposed on a surface of the color light-filtering layer or the common electrode in the first substrate. The electrophoretic layer includes a conductive optical adhesive film and a plurality of electrophoretic units. The electrophoretic units are distributed in the conductive optical adhesive film. The conductive optical adhesive film is directly bonded to the color light-filtering layer or the common electrode. There is no other adhesive layer between the electrophoretic layer and the first substrate. The conductive adhesive layer is disposed between the electrophoretic layer and the second substrate.

Abstract: According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.

Abstract: A method of fabricating a memory device at least includes the following steps. A first stack structure is formed above a substrate. The first stack structure includes a plurality of first insulating layers and a plurality of first conductive layers alternately stacked. A top layer of the first stack structure includes a plurality of anti-oxidation atoms therein. A second stack structure is formed on the first stack structure. The second stack structure includes a plurality of second insulating layers and a plurality of middle layers alternately stacked. A slit trench is formed to extend from the second stack structure to a top first conductor layer of the plurality of first conductor layers. A protective layer is formed on a sidewall of the top first conductive layer exposed by the slit trench. The memory device may be a 3D NAND flash memory with high capacity and high performance.

Abstract: An electrostatic discharge (ESD) protection device is provided. A deep-well region is formed on a substrate. A first well region, a second well region, a third well region, and a fourth well region are formed on the deep-well region. A fifth well region is formed in the fourth well region. A first doped region is formed in the first well region. A second doped region is formed in the second well region. A third doped region is formed in the fourth well region. A gate structure covers the third well region. Each of the substrate, the second well region, the fourth well region, the second doped region, and the third doped region has a first conductivity type. Each of the deep-well region, the first well region, the third well region, the fifth well region, and the first doped region has a second conductivity type.

Abstract: A memory device includes, from bottom to top, a substrate, a laminated layer and a stacked structure. Vertical channel pillars penetrate through the stacked structure and the laminated layer. First isolation structures are disposed aside the vertical channel pillars and penetrate through a lower part of the stacked structure. Second isolation structures are disposed over the first isolation structures and penetrate through an upper part of the stacked structure. Common source lines are disposed aside the vertical channel pillars and penetrate through the stacked structure and part of the laminated layer. From a top view, the common source lines extend in a first direction. Each of the first and second isolation structures has, in the first direction, two wide end portions respectively adjacent to two common source lines. The memory device may be applied in the process of manufacturing a 3D NAND flash memory with high capacity and high performance.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

Abstract: An electronic device comprises a substrate, a semiconductor element disposed on the substrate and comprising a top surface, a bottom surface and a side surface connected between the top surface and the bottom surface, and a shielding element comprising a first portion, a second portion and a third portion. The first portion is disposed between the bottom surface of the semiconductor layer and the substrate, the second portion surrounds the side surface of the semiconductor element, and the semiconductor element is disposed between the first portion and the third portion.

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

Abstract: A display device includes a substrate, a photosensitive element formed above the substrate, a signal line formed above the substrate, and a transparent conductive member electrically connected to the signal line and the photosensitive element. In a normal direction of the substrate, the signal line does not overlap with the photosensitive element.

Abstract: A display device includes a backlight module and a display panel. The display panel is disposed on the backlight module and includes two substrates, a sensor, and a light-shielding element. The sensor is disposed between the two substrates. The light-shielding element at least partially surrounds the sensor. A height of the light-shielding element is greater than a height of the sensor.

Abstract: Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.

Abstract: A planarization tool is configured to monitor and analyze the condition of a polishing pad over the life of the polishing pad. A piezoelectric pad monitoring device may be mounted to a polishing head of the planarization tool in place of a semiconductor wafer. The piezoelectric pad monitoring device may be pressed against the polishing pad. When pressed against the polishing pad, the piezoelectric pad monitoring device may generate a signal based on a quantity of pad contacts, on the polishing pad, that are in contact with the piezoelectric pad monitoring device. The signal may be provided to a processor of the planarization tool so that the processor may generate, based on the signal, a map of the pad contacts on the polishing pad. The processor may use the map of the pad contacts to determine properties of the polishing pad such as roughness and/or uniformity, among other examples.

Abstract: The semiconductor device includes a substrate, a stack disposed on the substrate, a first common source line and a second common source line disposed in the stack and connected to the substrate. The stack includes insulating layers and conductive layers alternately arranged. The first common source line and the second common source line are extended along a first direction and are arranged in a second direction that is perpendicular to the first direction. The first common source line includes a first segment and a second segment spaced apart by a first common source line cut. The second common source line includes a third segment and a fourth segment spaced apart by a second common source line cut. The first common source line cut is shifted relative to the second common source line cut in the first direction. A method of forming the semiconductor device is also disclosed.

Abstract: According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.

Abstract: The present disclosure provides an electronic device including a first sensing unit, a first transistor coupled to the first sensing unit, a second transistor coupled to the first transistor, a second sensing unit, a third transistor coupled to the second sensing unit, a fourth transistor coupled to the third transistor, a first signal line coupled to the second transistor and the fourth transistor, and a power line coupled to the first transistor and the third transistor, in which the power line is disposed between the first sensing unit and the second sensing unit.

Abstract: A semiconductor structure is provided. The semiconductor structure has a device region and a periphery region adjacent to the device region. The periphery region comprises an array contact defining region and a periphery contact defining region. The semiconductor structure comprises a substrate, a staircase structure, an etch stop layer, a plurality of array contacts, and a plurality of periphery contacts. The staircase structure is disposed on the substrate in the periphery region. The staircase structure comprises conductive layers and dielectric layers disposed alternately. The etch stop layer is disposed on the staircase structure in the array contact defining region. The array contacts are disposed on the staircase structure and through the etch stop layer in the array contact defining region. The periphery contacts are through the staircase structure in the periphery contact defining region.

Abstract: An ESD protection device includes a substrate, an epitaxial layer, first to third well regions, and first to sixth doped regions. The first to third well regions are disposed in the epitaxial layer. The third well region is disposed between the first and second well regions. The first and second doped regions are disposed on the first well region and coupled to a pad. The third and fourth doped regions are disposed on the second well region and coupled to a ground terminal. The fifth doped region is disposed on the third well region, and the sixth doped region is disposed in the fifth doped region. The third, fifth, and sixth doped regions have the same conductive type. In response to an electrostatic discharge event occurring on the pad, a discharge path is formed between the pad and the ground terminal.