Abstract: A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.

Abstract: A method includes receiving a workpiece having a first stack of semiconductor layers in a first region and a second stack of semiconductor layers in a second region; forming a first gate dielectric layer surrounding each layer of the first stack and a second gate dielectric layer surrounding each layer of the second stack; forming a first dipole layer surrounding the first gate dielectric layer and merging between vertically adjacent portions of the first gate dielectric layer, and a second dipole layer surrounding the second gate dielectric layer and merging between vertically adjacent portions of the second gate dielectric layer; removing the first dipole layer; after the removing of the first dipole layer, conducting a first annealing on the workpiece; removing a remaining portion of the second dipole layer; and forming a gate electrode layer in the first region and the second region.

Abstract: A method for evaluating a production potential for volume fracturing of a shale oil reservoir and determining a soaking time is discloses. The method may comprise: obtaining a core column; performing a saturated oil treatment on the core column; obtaining an initial fracture porosity parameter of the saturated oil-treated core column; soaking the core column after a CT scanning into a fracturing fluid to test the core mass increase amount at different immersion durations; obtaining the fracture porosity increase amount of the core column at different soaking times, and calculating a weight of newly added fracture porosity-fillable fracturing fluid; generating a curve of the core mass increase amount and a curve of the weight of the newly added fracture porosity-fillable fracturing fluid at different immersion durations; comparing a mass increase amount per volume unit of a core, and ranking a e mass increase amount per volume unit of the core to determine the production increase potential.

Abstract: A testing apparatus includes a circuit board, a probe station and a probe array. The circuit board includes a plurality of contacts. The probe station includes a platform located on the circuit board and used for carrying a device under test (DUT), and a plurality of probe holes formed on the platform and arranged in an array. The probe array includes a plurality of telescopic probes respectively linearly inserted into the probe holes. One end of each of the telescopic probes is contacted with one of the contacts, and the other end thereof is contacted with one of solder balls of the DUT. Each of the probe holes includes an elongated groove penetrating through the platform. Each of the telescopic probes is provided with a fin protruding outwardly and inserting into the elongated groove.

Abstract: A circuit arrangement includes a preprocessing circuit configured to obtain context information related to a user location, a learning circuit configured to determine a predicted user movement based on context information related to a user location to obtain a predicted route and to determine predicted radio conditions along the predicted route, and a decision circuit configured to, based on the predicted radio conditions, identify one or more first areas expected to have a first type of radio conditions and one or more second areas expected to have a second type of radio conditions different from the first type of radio conditions and to control radio activity while traveling on the predicted route according to the one or more first areas and the one or more second areas.

Abstract: A segmental precast composite-material composite-slab composite beam and a construction method thereof are provided, relating to the technical field of bridge design and construction. The segmental precast composite-material composite-slab composite beam mainly includes a segmental precast orthotropic composite top slab, a web, a bottom slab, and a wet joint between segments. The orthotropic composite top slab is composed of an orthotropic slab and an ultra-high-performance concrete layer (UHPC), and the interface connection of the orthotropic slab and the UHPC structural layer is achieved by a shear key. The UHPC structural layer is superposed with the orthotropic slab in segments in a precast plant to form a composite-slab composite beam segment to be entirely transported, hoisted and assembled, and the connection of the UHPC structural layers between the segments is achieved by casting a transverse wet joint in place.

Abstract: According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.

Abstract: The rotation shaft structure includes a main shaft assembly, and two folding assemblies that are symmetrically disposed with respect to the main shaft assembly. The two folding assemblies may rotate toward or against each other relative to the main shaft assembly. When the folding assembly is specifically disposed, the folding assembly includes a rotation assembly, a support plate, and a housing mounting bracket. The rotation assembly is rotationally connected to the main shaft assembly. The support plate is rotationally connected to the housing mounting bracket and slidably connected to the rotation assembly.

Abstract: A semiconductor structure includes a substrate, a first transistor disposed over the substrate and including a first channel, a first interfacial layer over the first channel, a first gate dielectric layer over the first interfacial layer, and a first gate electrode layer over the first gate dielectric layer, and a second transistor disposed over the substrate and including a second channel, a second interfacial layer over the second channel, a second gate dielectric layer over the second interfacial layer, and a second gate electrode layer over the second gate dielectric layer. The first gate dielectric layer includes a first dipole material composition having a first maximum concentration at a half-thickness line of the first gate dielectric layer. The second gate dielectric layer includes a second dipole material composition having a second maximum concentration at a half-thickness line of the second gate dielectric layer and greater than the first maximum concentration.

Abstract: A display device and a method for bonding the display device are provided. The display device includes a display panel and a plurality of chip on films. The plurality of chip on films are arranged along a first edge of the display panel, and are divided into a plurality of groups of chip on films, and each group of chip on films includes at least two chip on films, and is bonded to the display panel through a same anisotropic conductive film.

Abstract: There is provided a gate driving circuit comprising N first shift registers arranged alternately with N second shift registers. An input signal terminal of an n-th stage of first shift register is coupled to an output signal terminal of an (n?i)-th stage of first shift register, and a reset signal terminal of the n-th stage of first shift register is coupled to an output signal terminal of an (n+j)-th stage of first shift register. Input signal terminal and reset signal terminal of n-th stage of second shift register are coupled to output signal terminals of (n?i)-th and (n+j)-th stages of second shift registers respectively. K=6, i=3, and j=4. Reset signal terminals of (N?j+1)-th to N-th stages of first shift registers and reset signal terminals of (N?j+1)-th to N-th stages of second shift registers are configured to receive a total reset signal.

Abstract: The present application provides an unmanned aerial vehicle (UAV) for a long duration flight. An exemplary UAV may include a UAV body assembly. The UAV may also include a flight control system (FCS) coupled to the UAV body assembly. The UAV may further include a motor coupled to the UAV body assembly at one end and coupled to a propeller at the other end. The FCS is communicatively connected to the motor. A center of gravity (CG) of the UAV is at a point between 21% and 25% of a mean aerodynamic chord (MAC) of the UAV.

Abstract: A device includes a semiconductor substrate, a fin structure on the semiconductor substrate, a gate structure on the fin structure, and a pair of source/drain features on both sides of the gate structure. The gate structure includes an interfacial layer on the fin structure, a gate dielectric layer on the interfacial layer, and a gate electrode layer of a conductive material on and directly contacting the gate dielectric layer. The gate dielectric layer includes nitrogen element.

Abstract: A frame rate control method is provided. A primary scenario and a non-primary scenario are identified according to two or more windows displayed on a screen. Each of the primary scenario and the non-primary scenario is performed by an individual application. A frame rate of the non-primary scenario is decreased when a performance index indicates that a first condition is present. The application corresponding to the non-primary scenario is disabled when the performance index indicates that a second condition is present after decreasing the frame rate of the non-primary scenario, so as to remove the window corresponding to the non-primary scenario from the screen.

Abstract: The present disclosure provides an electronic device including a first sensing unit, a first transistor coupled to the first sensing unit, a second transistor coupled to the first transistor, a second sensing unit, a third transistor coupled to the second sensing unit, a fourth transistor coupled to the third transistor, a first signal line coupled to the second transistor and the fourth transistor, and a power line coupled to the first transistor and the third transistor, in which the power line is disposed between the first sensing unit and the second sensing unit.

Abstract: A wheel-side reducer system includes a housing, a speed reduction assembly, and a steering knuckle. The housing includes a front housing and a rear housing. The front housing and the rear housing are arranged opposite to each other and define an accommodating space together. The speed reduction assembly is arranged in the accommodating space. The steering knuckle is integrally molded on the front housing. The integrally molding of the steering knuckle on the front housing not only simplifies the production process of the housing, but also makes a connection between the steering knuckle and the front housing more reliable. Meanwhile, the integration level of the wheel-side reducer system can also be improved, to reduce the size of the wheel-side reducer system. A vehicle with the wheel-side reducer system is further disclosed.

Abstract: The instant disclosure provides a gate device and an umbrella sharing system which utilizes the gate device. The gate device includes a base, an actuator, a pair of gate plates, and an identification sensor. The actuator is disposed on a top surface of the base and includes a latch extending downward through the base. The pair of gate plates are disposed on a bottom surface of the base, and each of the gate plates includes a guiding structure and a locking structure. A waiting zone for receiving an umbrella is defined between the two guiding structures. The latch of the actuator is driven to engage with the locking structures to limit the movement of the gate plates. The identification sensor is above the waiting zone and disposed on the base and is configured to identify the identity of an umbrella which enters the waiting zone.

Abstract: This application provides a rotation shaft structure and an electronic device. The rotation shaft structure includes a main shaft assembly, and two folding assemblies. The folding assembly includes a rotation assembly, a support plate, and a housing mounting bracket. The rotation assembly is rotationally connected to the main shaft assembly. The support plate is rotationally connected to the housing mounting bracket and slidably connected to the rotation assembly. When two housing mounting brackets rotate toward each other, two support plates rotate in a same direction relative to the housing mounting brackets on corresponding sides, so that the two support plates and the main shaft assembly can form a triangle-like display accommodation space. When the electronic device is in a closed state, the display accommodation space can be used for accommodating a bent portion of the flexible display, so that the flexible display is not damaged by extrusion.

Abstract: A method can be performed by a first node for determining a parameter of physical (PHY) layer circuitry of a second node. The method can include implementing a cascaded hierarchy of techniques to determine, based on an electrical signal from a second node, a parameter of the PHY layer circuitry of the second node, and causing an antenna of the first node to transmit an electromagnetic wave consistent with the determined parameter.

Abstract: A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.