Abstract: A method of fabricating a memory device at least includes the following steps. A first stack structure is formed above a substrate. The first stack structure includes a plurality of first insulating layers and a plurality of first conductive layers alternately stacked. A top layer of the first stack structure includes a plurality of anti-oxidation atoms therein. A second stack structure is formed on the first stack structure. The second stack structure includes a plurality of second insulating layers and a plurality of middle layers alternately stacked. A slit trench is formed to extend from the second stack structure to a top first conductor layer of the plurality of first conductor layers. A protective layer is formed on a sidewall of the top first conductive layer exposed by the slit trench. The memory device may be a 3D NAND flash memory with high capacity and high performance.

Abstract: A memory device includes, from bottom to top, a substrate, a laminated layer and a stacked structure. Vertical channel pillars penetrate through the stacked structure and the laminated layer. First isolation structures are disposed aside the vertical channel pillars and penetrate through a lower part of the stacked structure. Second isolation structures are disposed over the first isolation structures and penetrate through an upper part of the stacked structure. Common source lines are disposed aside the vertical channel pillars and penetrate through the stacked structure and part of the laminated layer. From a top view, the common source lines extend in a first direction. Each of the first and second isolation structures has, in the first direction, two wide end portions respectively adjacent to two common source lines. The memory device may be applied in the process of manufacturing a 3D NAND flash memory with high capacity and high performance.

Abstract: An electrostatic discharge (ESD) protection device is provided. A deep-well region is formed on a substrate. A first well region, a second well region, a third well region, and a fourth well region are formed on the deep-well region. A fifth well region is formed in the fourth well region. A first doped region is formed in the first well region. A second doped region is formed in the second well region. A third doped region is formed in the fourth well region. A gate structure covers the third well region. Each of the substrate, the second well region, the fourth well region, the second doped region, and the third doped region has a first conductivity type. Each of the deep-well region, the first well region, the third well region, the fifth well region, and the first doped region has a second conductivity type.

Abstract: A light-folding element includes an object-side surface, an image-side surface, a reflection surface and a connection surface. The reflection surface is configured to reflect imaging light passing through the object-side surface to the image-side surface. The connection surface is connected to the object-side, image-side and reflection surfaces. The light-folding element has a recessed structure located at the connection surface. The recessed structure is recessed from the connection surface an includes a top end portion, a bottom end portion and a tapered portion located between the top end and bottom end portions. The top end portion is located at an edge of the connection surface. The tapered portion has two tapered edges located on the connection surface. The tapered edges are connected to the top end and bottom end portions. A width of the tapered portion decreases in a direction from the top end portion towards the bottom end portion.

Abstract: A hybrid powertrain and a vehicle are provided. The hybrid powertrain includes a first electrical machine, an engine, a main shaft, a clutch assembly, a second electrical machine, and a power battery. One end of the main shaft is connected to an output shaft of the engine, and another end of the main shaft is selectively connected to an electrical machine shaft of the first electrical machine through the clutch assembly. The first electrical machine is configured to selectively output power to a first wheel end through the clutch assembly. The second electrical machine includes a rotor and a stator, the rotor is configured to rotate relative to the stator, and the rotor is fixedly connected to the main shaft. The first electrical machine and the second electrical machine are connected to the power battery.

Abstract: A thermal power budget optimization method includes acquiring sensor log information from a plurality of sensors of a heating device, generating a virtual surface temperature of the heating device according to the sensor log information, setting a target surface temperature of the heating device, and dynamically adjusting a thermal power budget of the heating device according to the virtual surface temperature and the target surface temperature over time.

Abstract: An antenna assembly includes a patch antenna, a metal layer, and a feed-in signal layer. The metal layer is disposed on a side of the patch antenna and includes a first slot and a second slot. The feed-in signal layer is disposed on a side of the metal layer opposite the second antenna and includes a transmitting port, a receiving port, a hybrid coupler, and two microstrips. The transmitting port and the receiving port are connected to the hybrid coupler, and the two microstrips are extended in the direction away from the hybrid coupler. Projections of two ends of the two microstrips onto the metal layer are overlapped with the first slot and the second slot. An antenna array is also mentioned.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

Abstract: A minimum IC operating voltage searching method includes acquiring a corner type of an IC, acquiring ring oscillator data of the IC, generating a first prediction voltage according to the corner type and the ring oscillator data by using a training model, generating a second prediction voltage according to the ring oscillator data by using a non-linear regression approach under an N-ordered polynomial, and generating a predicted minimum IC operating voltage according to the first prediction voltage and the second prediction voltage. N is a positive integer.

Abstract: A probe card device includes a wiring board provided with a plurality of contacts, a probe head having a probe holder and a plurality of conductive probes arranged on the probe holder, respectively, and a circuit protection assembly including an insulation plate, a plurality of through holes and a plurality of self-resetting fusing elements. The insulation plate is sandwiched between the wiring board and the probe head. The through holes are respectively formed on the insulation plate and arranged in an array form. The self-resetting fusing elements are respectively disposed within the through holes. Each of the self-resetting fusing elements is electrically connected to one of the contacts and one of the conductive probes for reversibly breaking down electric currents from the wiring board to the conductive probe.

Abstract: A release protection film and a method for manufacturing the same are provided. The method includes: preparing a resin material; subjecting the resin material to an extrusion process and a stretching process, so as to form a resin membrane; and forming an embossed pattern having a depth of from 1 ?m to 5 ?m onto the resin membrane by an embossing roller, so as to form the release protection film. The resin material includes a polyolefin material and a petroleum resin. Based on a total weight of the polyolefin material being 100 phr, an amount of the petroleum resin ranges from 5 phr to 20 phr.

Abstract: A clutch assembly includes a first transmission member, a first clutch component, and a second clutch component. The first clutch component includes a first clutch portion and a second clutch portion, and the second clutch component includes a third clutch portion and a fourth clutch portion. The first clutch portion and the third clutch portion are connected to the first transmission member to enable the first transmission member to form a first end of the clutch assembly. The second clutch portion is selectively engaged with the first clutch portion to enable the second clutch portion to form a second end of the clutch assembly. The fourth clutch portion is selectively engaged with the third clutch portion to enable the fourth clutch portion to form a third end of the clutch assembly.

Abstract: A method for the surface treatment of a corrosion-resistant nickel-based alloy and the resulting surface structure of the treated alloy is disclosed. The method includes immersing a nickel-based alloy in a first neutral or alkaline solution to remove surface contaminants, followed by immersing the cleaned alloy in a second neutral or alkaline solution to form functional groups on its surface. Subsequently, a low-temperature heat treatment is performed to form a passivation layer on the surface of the nickel-based alloy. The passivation layer has a surface roughness of less than 0.04 microns and a thickness ranging from 5 nanometers to 200 nanometers. The resulting corrosion-resistant nickel-based alloy comprises a substrate made of the nickel-based alloy and a passivation layer established on at least one surface of the substrate. The nickel content of the alloy is greater than 50%, and the alloy may also contain additional metallic components such as chromium (Cr) and manganese (Mn).

Abstract: An electronic device comprises a substrate, a semiconductor element disposed on the substrate and comprising a top surface, a bottom surface and a side surface connected between the top surface and the bottom surface, and a shielding element comprising a first portion, a second portion and a third portion. The first portion is disposed between the bottom surface of the semiconductor layer and the substrate, the second portion surrounds the side surface of the semiconductor element, and the semiconductor element is disposed between the first portion and the third portion.

Abstract: A sole data collection device and a sole data collection method are disclosed. The sole data collection device includes an image capture module, a temperature detection module and a monofilament testing module. The sole data collection device is used for collecting the sole data of a user, and the sole data is transmitted to a cloud server. The sole data collection device and the sole data collection method are not only convenient for a user to collect sole data at home at any time, but also allow the user's caregiver and/or relevant medical care personnel to extract the sole data from the cloud server to screen the user's plantar condition, so as to solve the problem that it is time-consuming and costly to go to a medical institution for relevant examinations.

Abstract: A powertrain system includes a conversion device, a first motor, a second motor, and an engine. At least one of the first motor and the engine is configured to selectively output power to a first traveling end by means of the conversion device; the engine is configured to selectively output the power to the first motor by means of the conversion device, to drive the first motor to generate electricity; and the second motor is in driving connection with the engine, so that the powertrain system has a first simultaneous driving and electricity-generating mode. In the first simultaneous driving and electricity-generating mode, the first motor outputs the power to the first traveling end by means of the conversion device; and the second motor, driven by the engine, generates electricity.

Abstract: A chip storing device includes a supporting frame, an elastic airbag and an airtight container. The supporting frame includes a loading tray having a receiving slot and a positioning portion. The receiving slot is used for containing a packaged chip. The positioning portion is disposed within the receiving slot, and used for limiting the elastic airbag. The airtight container is formed with an accommodating space therein. The supporting frame and the elastic air bag are completely received within the accommodation space. when the accommodation space is evacuated to be in a negative pressure environment, the volume of the elastic airbag is increased in the negative pressure environment, so that the elastic airbag that is inflated directly abuts against the packaged chip within the receiving slot.

Abstract: An element pickup mechanism includes a pick-up arm and an elastic gasket. The pick-up arm includes a bracket, an air-extraction pipe and a suction cup. The bracket is provided with an inner space and an opening that is formed on one side of the bracket and in communication with the inner space. The air-extraction pipe is disposed on the bracket and connected to a vacuum pump equipment. The suction cup is sleeved on one end of the air-extraction pipe, located in the inner space and faced towards the opening of the bracket. The elastic gasket includes a flexible pad and a through hole. The flexible pad is formed with a flat surface and an attached surface that is fixedly attached to the side of the bracket. The through hole penetrates through the flexible pad to coaxially align with the opening and the suction cup.

Abstract: The present disclosure provides a storage control method, including: sending a command acquisition request for at least one first queue, where the at least one first queue is a queue among a plurality of queues which accumulates at least one queue request message, and a command acquisition request for each first queue of the at least one first queue corresponds to all accumulated queue request messages of the first queue; and receiving a storage command for each first queue in the at least one first queue.