Abstract: A cover for an electronic device and methods of forming a cover is disclosed. The electronic device may include a housing, and a cover coupled to the housing. The cover may have an inner surface having at least one of an intermediate polish and a final polish, a groove formed on the inner surface, and an outer surface positioned opposite the inner surface. The outer surface may have at least one of the intermediate polish and the final polish. The cover may also have a rounded perimeter portion formed between the inner surface and the outer surface. The rounded perimeter portion may be positioned adjacent the groove. The method for forming the cover may include performing a first polishing process on the sapphire component using a polishing tool, and performing a second polishing process on the groove of the sapphire component forming the cover using blasting media.

Abstract: Metal oxide based memory devices and methods for manufacturing are described herein. A method for manufacturing a memory cell includes forming an insulation layer on an access device followed by forming vias through the insulation layer to expose the first and second access device terminals. First and second interlayer conductors extending through the vias are formed next. Top surfaces of the interlayer conductors are oxidized to form oxide layers. The oxide layer on the first interlayer conductor forms a memory layer. On top of the insulation layer a layer of protection metal is formed covering the oxide layers. The layer of protection metal is patterned and etched to form a top electrode layer covering the memory layer. The oxide layer on the second interlayer conductor is removed. Parallel first and second access lines are then formed on the top electrode layer and the second interlayer conductor, respectively.

Abstract: A semiconductor structure, a resistive random access memory unit structure, and a manufacturing method of the semiconductor structure are provided. The semiconductor structure includes an insulating structure, a stop layer, a metal oxide layer, a resistance structure, and an electrode material layer. The insulating structure has a via, and the stop layer is formed in the via. The metal oxide layer is formed on the stop layer. The resistance structure is formed at a bottom of an outer wall of the metal oxide layer. The electrode material layer is formed on the metal oxide layer.

Abstract: Provided is an operation method applicable to a resistive memory cell including a transistor and a resistive memory element. The operation method includes: in a programming operation, generating a programming current flowing through the transistor and the resistive memory element so that a resistance state of the resistive memory element changes from a first resistance state into a second resistance state; and in an erase operation, generating an erase current from a well region of the transistor to the resistive memory element but keeping the erase current from flowing through the transistor, so that the resistance state of the resistive memory element changes from the second resistance state into the first resistance state.

Abstract: A semiconductor structure, a resistive random access memory unit structure, and a manufacturing method of the semiconductor structure are provided. The semiconductor structure includes an insulating structure, a stop layer, a metal oxide layer, a resistance structure, and an electrode material layer. The insulating structure has a via, and the stop layer is formed in the via. The metal oxide layer is formed on the stop layer. The resistance structure is formed at a bottom of an outer wall of the metal oxide layer. The electrode material layer is formed on the metal oxide layer.

Abstract: A composite vibration diaphragm fabrication method includes the steps of: (a) mixing a reinforcing material with a hot melt adhesive to form a first mixture and to let the reinforcing material be wrapped in the hot melt adhesive uniformly, (b) mixing the first mixture with a thermosetting adhesive to form a second mixture, (c) coating the second mixture on a vibration diaphragm material and then heating the second mixture coated vibration diaphragm material, and (d) cooling down the coated vibration diaphragm material in which the second mixture is cured and bonded to the vibration diaphragm material. Thus, when baking the second mixture, the internal hot melt adhesive will be melted and integrated with the thermosetting adhesive, and the thermosetting adhesive will also be cured, enabling the reinforcing material to be uniformly bonded to the vibration diaphragm to reinforce the strength and rigidity of the composite vibration diaphragm.

Abstract: A composite diaphragm is provided to include a base layer and a micro-nanometer ceramic layer disposed on the surface of the base layer. The micro-nanometer ceramic is a structural material that has great stiffness and toughness, such that the composite diaphragm made of micro-nanometer ceramic manifests characteristics of high stiffness, high toughness, and great ductility. Thus, the composite diaphragm allows large deformation at room temperature to achieve high capability of producing high-definition tone.

Abstract: Provided is an operation method applicable to a resistive memory cell including a transistor and a resistive memory element. The operation method includes: in a programming operation, generating a programming current flowing through the transistor and the resistive memory element so that a resistance state of the resistive memory element changes from a first resistance state into a second resistance state; and in an erase operation, generating an erase current from a well region of the transistor to the resistive memory element but keeping the erase current from flowing through the transistor, so that the resistance state of the resistive memory element changes from the second resistance state into the first resistance state.

Abstract: A conductive bridge resistive memory device is provided, comprising a first electrode, a memory layer electrically coupled to the first electrode, an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer, a semiconductor layer disposed between the memory layer and the ion-supplying layer, and a second electrode electrically coupled to the ion-supplying layer.

Abstract: A metal oxide formed by in situ oxidation assisted by radiation induced photo-acid is described. The method includes depositing a photosensitive material over a metal surface of an electrode. Upon exposure to radiation (for example ultraviolet light), a component, such as a photo-acid generator, of the photosensitive material forms an oxidizing reactant, such as a photo acid, which causes oxidation of the metal at the metal surface. As a result of the oxidation, a layer of metal oxide is formed. The photosensitive material can then be removed, and subsequent elements of the component can be formed in contact with the metal oxide layer. The metal oxide can be a transition metal oxide by oxidation of a transition metal. The metal oxide layer can be applied as a memory element in a programmable resistance memory cell. The metal oxide can be an element of a programmable metallization cell.

Abstract: A metal oxide formed by in situ oxidation assisted by radiation induced photo-acid is described. The method includes depositing a photosensitive material over a metal surface of an electrode. Upon exposure to radiation (for example ultraviolet light), a component, such as a photo-acid generator, of the photosensitive material forms an oxidizing reactant, such as a photo acid, which causes oxidation of the metal at the metal surface. As a result of the oxidation, a layer of metal oxide is formed. The photosensitive material can then be removed, and subsequent elements of the component can be formed in contact with the metal oxide layer. The metal oxide can be a transition metal oxide by oxidation of a transition metal. The metal oxide layer can be applied as a memory element in a programmable resistance memory cell. The metal oxide can be an element of a programmable metallization cell.

Abstract: An operating method for a memory device and a memory array and an operating method for the same are provided. The operating method for the memory device comprises following steps. A memory device is made being in a set state. A method for making the memory device being in the set state comprises applying a first bias voltage to the memory device. The memory device in the set state is read. A method for reading the memory device in the set state comprises applying a second bias voltage to the memory device. A recovering bias voltage is applied to the memory device. The step for applying the recovering bias voltage is performed after the step for applying the first bias voltage or the step for applying the second bias voltage.

Abstract: A conductive bridge resistive memory device is provided, comprising a first electrode, a memory layer electrically coupled to the first electrode, an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer, a semiconductor layer disposed between the memory layer and the ion-supplying layer, and a second electrode electrically coupled to the ion-supplying layer.

Abstract: An operating method for a memory device and a memory array and an operating method for the same are provided. The operating method for the memory device comprises following steps. A memory device is made being in a set state. A method for making the memory device being in the set state comprises applying a first bias voltage to the memory device. The memory device in the set state is read. A method for reading the memory device in the set state comprises applying a second bias voltage to the memory device. A recovering bias voltage is applied to the memory device. The step for applying the recovering bias voltage is performed after the step for applying the first bias voltage or the step for applying the second bias voltage.

Abstract: The present invention discloses certain diterpenes that can be used to inhibit androgen receptor activity, induce apoptosis and block cell cycle progression of androgen receptor-dependent cells. Androgen receptor has been associated with various diseases such as prostate cancer, androgeneic alopecia, breast cancer, acne etc. Accordingly, the present invention further discloses methods of treating androgen receptor-associated diseases by administering the disclosed diterpenes.

Abstract: A dimmer circuit applicable for LED device and control method thereof is disclosed in the embodiments of the present invention. The dimmer circuit is applicable for controlling at least a LED device. The dimmer circuit includes a rectifier, a bleeder, a phase angle detect circuit, a constant current circuit and a programmable micro controller. The phase angle detect circuit couples to the programmable micro controller. The constant current circuit couples to the LED device The programmable micro controller generates a PWM signal according to the output signal of the phase angle detect circuit to adjust current of the constant current circuit.

Abstract: A pharyngeal intubation guiding device includes lengthwise extending tongue-side and palate-side walls that cooperatively define a guiding duct. The tongue-side wall is configured to conform to the rear end of a patient's tongue to permit the guiding duct to confront the opening of the patient's larynx. The palate-side wall has an outer contour which establishes a guideway towards the opening of the patient's esophagus. A lengthwise extending laryngoscope guiding channel and a lengthwise extending endotracheal tube guiding groove are disposed in the guiding duct. A viewing window is disposed to define a terminal end of the laryngoscope guiding channel. The endotracheal tube guiding groove has a lead-in port to permit an endotracheal tube introduced therein to be removable laterally. A lengthwise extending conduit is disposed in the guiding duct to permit an aspirator tube to reach the patient's trachea to suck out phlegm.

Abstract: A dimmer circuit applicable for LED device and control method thereof is disclosed in the embodiments of the present invention. The dimmer circuit is applicable for controlling at least a LED device. The dimmer circuit includes a rectifier, a bleeder, a phase angle detect circuit, a constant current circuit and a programmable micro controller. The phase angle detect circuit couples to the programmable micro controller. The constant current circuit couples to the LED device The programmable micro controller generates a PWM signal according to the output signal of the phase angle detect circuit to adjust current of the constant current circuit.

Abstract: A pharyngeal intubation guiding device includes lengthwise extending tongue-side and palate-side walls that cooperatively define a guiding duct. The tongue-side wall is configured to conform to the rear end of a patient's tongue to permit the guiding duct to confront the opening of the patient's larynx. The palate-side wall has an outer contour which establishes a guideway towards the opening of the patient's esophagus. A lengthwise extending laryngoscope guiding channel and a lengthwise extending endotracheal tube guiding groove are disposed in the guiding duct. A viewing window is disposed to define a terminal end of the laryngoscope guiding channel. The endotracheal tube guiding groove has a lead-in port to permit an endotracheal tube introduced therein to be removable laterally. A lengthwise extending conduit is disposed in the guiding duct to permit an aspirator tube to reach the patient's trachea to suck out phlegm.

Abstract: The invention generally relates to novel methods of measuring the effectiveness of a drug for the treatment of diabetes and methods of diagnosing diabetes. In some embodiments of the invention, IL-1Ra is used as a biomarker to measure the effectiveness of a drug for the treatment of diabetes.