Abstract: A light guide plate, a backlight module and a display device are provided. The light guide plate is configured to be coupled to a light source. The light guide plate includes a light-emitting surface, a bottom surface, a light-incident surface, plural stripe-shaped microstructures and plural light guiding microstructures. The bottom surface is opposite to the light-emitting surface. The light-incident surface is connected between the light-emitting surface and the bottom surface. The stripe-shaped microstructures are disposed on the at least one of the light-emitting surface and the bottom surface, and each of the stripe-shaped microstructures has two opposing side surfaces and an active surface. The side surfaces are respectively connected to two opposite sides of the active surface. The light-guiding microstructures are disposed between any adjacent two of the stripe-shaped microstructures and arranged along an extending direction of each of the stripe-shaped microstructures.

Abstract: Provided is a semiconductor structure. The semiconductor structure is formed on a substrate, and includes a first region and a second region surrounded by the first region. The first region has a first pattern density, and the second region has a second pattern density. The first pattern density is smaller than the second pattern density. The second region includes a central region and a boundary region. The central region has a first critical dimension, and the boundary region has a second critical dimension. Variation between the first critical dimension and the second critical dimension is smaller than 6.5%.

Abstract: Present example embodiments relate generally to semiconductor devices, masks, wafers, and methods of fabricating semiconductor devices, masks, and wafers. Example methods comprise providing a substrate having a photoresist layer. Example methods further comprise providing a mask having a substantially rectangular pattern and an elongated pattern, at least a portion of the elongated pattern positioned at least proximate to a corner of the substantially rectangular pattern, wherein the elongated pattern extends outwardly from the substantially rectangular pattern. Example methods further comprise forming a substantially rectangular shaped pattern on the photoresist layer resembling the substantially rectangular pattern using a cooperation of the substantially rectangular pattern and the elongated pattern.

Abstract: Provided is a semiconductor structure. The semiconductor structure is formed on a substrate, and includes a first region and a second region surrounded by the first region. The first region has a first pattern density, and the second region has a second pattern density. The first pattern density is smaller than the second pattern density. The second region includes a central region and a boundary region. The central region has a first critical dimension, and the boundary region has a second critical dimension. Variation between the first critical dimension and the second critical dimension is smaller than 6.5%.

Abstract: Better alignment mark designs for semiconductor devices may substantially lessen the frequency of layer misalignment scanner alignment problems. Exemplary alignment mark designs substantially avoid or minimize damage during the fill-in and etching and chemical mechanical processing processes. Thus, additional processing steps to even out various layers or to address the misalignment problems may also be avoided.

Abstract: Present example embodiments relate generally to semiconductor devices, masks, wafers, and methods of fabricating semiconductor devices, masks, and wafers. Example methods comprise providing a substrate having a photoresist layer. Example methods further comprise providing a mask having a substantially rectangular pattern and an elongated pattern, at least a portion of the elongated pattern positioned at least proximate to a corner of the substantially rectangular pattern, wherein the elongated pattern extends outwardly from the substantially rectangular pattern. Example methods further comprise forming a substantially rectangular shaped pattern on the photoresist layer resembling the substantially rectangular pattern using a cooperation of the substantially rectangular pattern and the elongated pattern.

Abstract: Better alignment mark designs for semiconductor devices may substantially lessen the frequency of layer misalignment scanner alignment problems. Exemplary alignment mark designs substantially avoid or minimize damage during the fill-in and etching and chemical mechanical processing processes. Thus, additional processing steps to even out various layers or to address the misalignment problems may also be avoided.

Abstract: Better alignment mark designs for semiconductor devices may substantially lessen the frequency of layer misalignment scanner alignment problems. Exemplary alignment mark designs substantially avoid or minimize damage during the fill-in and etching and chemical mechanical processing processes. Thus, additional processing steps to even out various layers or to address the misalignment problems may also be avoided.

Abstract: A method is used with an IC device including a stack of dielectric/conductive layers to form interlayer connectors extending from a surface of the device to the conductive layers. Contact openings are created through a dielectric layer to a first conductive layer. N etch masks, with 2N?1 being less than W, 2N being greater than or equal to W, have spaced apart open etch regions and mask regions elsewhere. The stack of layers are etched only through W?1 contact openings to create extended contact openings extending to W?1 conductive layers; 2n?1 conductive layers are etched for up to half of the contact openings for each etch mask n=1, 2 . . . N. The contact openings are etched with different combinations of the etch masks' open etch regions. Interlayer connectors are formed in the contact openings.

Abstract: A method is used with an IC device including a stack of dielectric/conductive layers to form interlayer connectors extending from a surface of the device to the conductive layers. Contact openings are created through a dielectric layer to a first conductive layer. N etch masks, with 2N?1 being less than W, 2N being greater than or equal to W, have spaced apart open etch regions and mask regions elsewhere. The stack of layers are etched only through W?1 contact openings to create extended contact openings extending to W?1 conductive layers; 2n?1 conductive layers are etched for up to half of the contact openings for each etch mask n=1, 2 . . . N. The contact openings are etched with different combinations of the etch masks' open etch regions. Interlayer connectors are formed in the contact openings.

Abstract: Better alignment mark designs for semiconductor devices may substantially lessen the frequency of layer misalignment scanner alignment problems. Exemplary alignment mark designs substantially avoid or minimize damage during the fill-in and etching and chemical mechanical processing processes. Thus, additional processing steps to even out various layers or to address the misalignment problems may also be avoided.

Abstract: A method for preparing an acetazolamide microparticle having a mean particle size ranged between 0.36 ?m and 18 ?m is provided. The method includes steps of dissolving an acetazolamide in a solvent to form an acetazolamide solution; and mixing the acetazolamide solution with a supercritical fluid at a temperature and a pressure above a critical point of the supercritical fluid for forming the acetazolamide microparticle, wherein the solvent is miscible with the supercritical fluid.

Abstract: An indicating apparatus for skin protection against sunshine a power unit, a control IC connected to the power unit, a display panel electrically connected to the control IC, the display panel having display areas for displaying UV intensity, dermatoglyphics characteristics, and sun protection factor data, a UV sensor electrically connected to the control IC and adapted to detect UV intensity of sunlight, a signal converter adapted to convert analog UV intensity signal from the UV sensor into electronic signal for the control IC, and an input device electrically connected to the control IC for data entry of the user's dermatoglyphics characteristics for enabling the control IC to compute inputted data and to output sun protection factor reference data to the display panel for reference by the user.