Patents by Inventor Feng-Nien Tsai

Feng-Nien Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9548291
    Abstract: Provided is a semiconductor structure. The semiconductor structure is formed on a substrate, and includes a first region and a second region surrounded by the first region. The first region has a first pattern density, and the second region has a second pattern density. The first pattern density is smaller than the second pattern density. The second region includes a central region and a boundary region. The central region has a first critical dimension, and the boundary region has a second critical dimension. Variation between the first critical dimension and the second critical dimension is smaller than 6.5%.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: January 17, 2017
    Assignee: MACRONIX International Co., Ltd.
    Inventor: Feng-Nien Tsai
  • Patent number: 9395629
    Abstract: Present example embodiments relate generally to semiconductor devices, masks, wafers, and methods of fabricating semiconductor devices, masks, and wafers. Example methods comprise providing a substrate having a photoresist layer. Example methods further comprise providing a mask having a substantially rectangular pattern and an elongated pattern, at least a portion of the elongated pattern positioned at least proximate to a corner of the substantially rectangular pattern, wherein the elongated pattern extends outwardly from the substantially rectangular pattern. Example methods further comprise forming a substantially rectangular shaped pattern on the photoresist layer resembling the substantially rectangular pattern using a cooperation of the substantially rectangular pattern and the elongated pattern.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: July 19, 2016
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Feng-Nien Tsai
  • Publication number: 20160190116
    Abstract: Provided is a semiconductor structure. The semiconductor structure is formed on a substrate, and includes a first region and a second region surrounded by the first region. The first region has a first pattern density, and the second region has a second pattern density. The first pattern density is smaller than the second pattern density. The second region includes a central region and a boundary region. The central region has a first critical dimension, and the boundary region has a second critical dimension. Variation between the first critical dimension and the second critical dimension is smaller than 6.5%.
    Type: Application
    Filed: December 24, 2014
    Publication date: June 30, 2016
    Inventor: Feng-Nien Tsai
  • Patent number: 9123729
    Abstract: Better alignment mark designs for semiconductor devices may substantially lessen the frequency of layer misalignment scanner alignment problems. Exemplary alignment mark designs substantially avoid or minimize damage during the fill-in and etching and chemical mechanical processing processes. Thus, additional processing steps to even out various layers or to address the misalignment problems may also be avoided.
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: September 1, 2015
    Assignee: Macronix International Co., Ltd.
    Inventor: Feng-Nien Tsai
  • Publication number: 20150234283
    Abstract: Present example embodiments relate generally to semiconductor devices, masks, wafers, and methods of fabricating semiconductor devices, masks, and wafers. Example methods comprise providing a substrate having a photoresist layer. Example methods further comprise providing a mask having a substantially rectangular pattern and an elongated pattern, at least a portion of the elongated pattern positioned at least proximate to a corner of the substantially rectangular pattern, wherein the elongated pattern extends outwardly from the substantially rectangular pattern. Example methods further comprise forming a substantially rectangular shaped pattern on the photoresist layer resembling the substantially rectangular pattern using a cooperation of the substantially rectangular pattern and the elongated pattern.
    Type: Application
    Filed: February 19, 2014
    Publication date: August 20, 2015
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Feng-Nien Tsai
  • Publication number: 20140167297
    Abstract: Better alignment mark designs for semiconductor devices may substantially lessen the frequency of layer misalignment scanner alignment problems. Exemplary alignment mark designs substantially avoid or minimize damage during the fill-in and etching and chemical mechanical processing processes. Thus, additional processing steps to even out various layers or to address the misalignment problems may also be avoided.
    Type: Application
    Filed: February 20, 2014
    Publication date: June 19, 2014
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Feng-Nien Tsai
  • Patent number: 8692393
    Abstract: Better alignment mark designs for semiconductor devices may substantially lessen the frequency of layer misalignment scanner alignment problems. Exemplary alignment mark designs substantially avoid or minimize damage during the fill-in and etching and chemical mechanical processing processes. Thus, additional processing steps to even out various layers or to address the misalignment problems may also be avoided.
    Type: Grant
    Filed: June 12, 2012
    Date of Patent: April 8, 2014
    Assignee: Macronix International Co., Ltd.
    Inventor: Feng-Nien Tsai
  • Publication number: 20140021628
    Abstract: A method is used with an IC device including a stack of dielectric/conductive layers to form interlayer connectors extending from a surface of the device to the conductive layers. Contact openings are created through a dielectric layer to a first conductive layer. N etch masks, with 2N?1 being less than W, 2N being greater than or equal to W, have spaced apart open etch regions and mask regions elsewhere. The stack of layers are etched only through W?1 contact openings to create extended contact openings extending to W?1 conductive layers; 2n?1 conductive layers are etched for up to half of the contact openings for each etch mask n=1, 2 . . . N. The contact openings are etched with different combinations of the etch masks' open etch regions. Interlayer connectors are formed in the contact openings.
    Type: Application
    Filed: September 7, 2012
    Publication date: January 23, 2014
    Applicant: Macronix International Co., Ltd.
    Inventors: Yen-Hao Shih, Shih-Hung Chen, Teng-Hao Yeh, Chih-Wei Hu, Feng-Nien Tsai, Lo-Yueh Lin
  • Patent number: 8633099
    Abstract: A method is used with an IC device including a stack of dielectric/conductive layers to form interlayer connectors extending from a surface of the device to the conductive layers. Contact openings are created through a dielectric layer to a first conductive layer. N etch masks, with 2N?1 being less than W, 2N being greater than or equal to W, have spaced apart open etch regions and mask regions elsewhere. The stack of layers are etched only through W?1 contact openings to create extended contact openings extending to W?1 conductive layers; 2n?1 conductive layers are etched for up to half of the contact openings for each etch mask n=1, 2 . . . N. The contact openings are etched with different combinations of the etch masks' open etch regions. Interlayer connectors are formed in the contact openings.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: January 21, 2014
    Assignee: Macronix International Co., Ltd.
    Inventors: Yen-Hao Shih, Shih-Hung Chen, Teng-Hao Yeh, Chih-Wei Hu, Feng-Nien Tsai, Lo-Yueh Lin
  • Publication number: 20130328221
    Abstract: Better alignment mark designs for semiconductor devices may substantially lessen the frequency of layer misalignment scanner alignment problems. Exemplary alignment mark designs substantially avoid or minimize damage during the fill-in and etching and chemical mechanical processing processes. Thus, additional processing steps to even out various layers or to address the misalignment problems may also be avoided.
    Type: Application
    Filed: June 12, 2012
    Publication date: December 12, 2013
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Feng-Nien TSAI
  • Publication number: 20120121708
    Abstract: A method for preparing an acetazolamide microparticle having a mean particle size ranged between 0.36 ?m and 18 ?m is provided. The method includes steps of dissolving an acetazolamide in a solvent to form an acetazolamide solution; and mixing the acetazolamide solution with a supercritical fluid at a temperature and a pressure above a critical point of the supercritical fluid for forming the acetazolamide microparticle, wherein the solvent is miscible with the supercritical fluid.
    Type: Application
    Filed: November 15, 2010
    Publication date: May 17, 2012
    Applicant: National Taiwan University
    Inventors: Yan-Ping Chen, Feng-Nien Tsai
  • Publication number: 20040031927
    Abstract: An indicating apparatus for skin protection against sunshine a power unit, a control IC connected to the power unit, a display panel electrically connected to the control IC, the display panel having display areas for displaying UV intensity, dermatoglyphics characteristics, and sun protection factor data, a UV sensor electrically connected to the control IC and adapted to detect UV intensity of sunlight, a signal converter adapted to convert analog UV intensity signal from the UV sensor into electronic signal for the control IC, and an input device electrically connected to the control IC for data entry of the user's dermatoglyphics characteristics for enabling the control IC to compute inputted data and to output sun protection factor reference data to the display panel for reference by the user.
    Type: Application
    Filed: October 4, 2002
    Publication date: February 19, 2004
    Applicants: A & D Sports Timer Co., Ltd., Chen Chang Co., Ltd.
    Inventors: Feng-Nien Tsai, Wei-Cheng Chen
  • Patent number: D479805
    Type: Grant
    Filed: August 27, 2002
    Date of Patent: September 23, 2003
    Assignee: Chen Chang Co., Ltd.
    Inventor: Feng-Nien Tsai