Patents by Inventor Feng Q. Liu
Feng Q. Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145232Abstract: A method includes forming a first layer and a second layer on a substrate, forming a passivation layer on a surface of the first layer without forming the passivation layer on a surface of the second layer by exposing the first layer and the second layer to a benzyl compound, and after forming the passivation layer on the first layer, performing at least one of: depositing a third layer on the second layer, or etching the second layer.Type: ApplicationFiled: October 28, 2022Publication date: May 2, 2024Inventors: Feng Q. Liu, Mark J. Saly, David Thompson
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Patent number: 11946135Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.Type: GrantFiled: March 27, 2023Date of Patent: April 2, 2024Assignee: Applied Materials, Inc.Inventors: Feng Q. Liu, Hua Chung, Schubert Chu, Mei Chang, Jeffrey W. Anthis, David Thompson
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Patent number: 11942330Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.Type: GrantFiled: June 9, 2022Date of Patent: March 26, 2024Assignee: Applied Materials, Inc.Inventors: Feng Q. Liu, Lisa J. Enman, Lakmal C. Kalutarage, Mark J. Saly
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Patent number: 11894233Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.Type: GrantFiled: September 29, 2022Date of Patent: February 6, 2024Assignee: Applied Materials, Inc.Inventors: Yixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu, Jeffrey W. Anthis, David Thompson, Jacqueline S. Wrench, Naomi Yoshida
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Patent number: 11891690Abstract: A method of forming a molybdenum film by oxidation and reduction is disclosed. A molybdenum oxide film is formed by CVD or ALD using a halide free organometallic molybdenum precursor. The molybdenum oxide film contains low amounts of carbon impurities. The molybdenum oxide film is reduced to form a highly pure molybdenum film. The molybdenum film has low resistance and properties similar to bulk molybdenum.Type: GrantFiled: August 11, 2020Date of Patent: February 6, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Feng Q. Liu, Alexander Jansen, Mark Saly
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Publication number: 20230382933Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: ApplicationFiled: August 10, 2023Publication date: November 30, 2023Applicant: Applied Materials, Inc.Inventors: Chandan Kr Barik, John Sudijono, Chandan Das, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan, Feng Q. Liu
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Publication number: 20230386833Abstract: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.Type: ApplicationFiled: May 25, 2022Publication date: November 30, 2023Applicant: Applied Materials, Inc.Inventors: Liqi Wu, Feng Q. Liu, Bhaskar Jyoti Bhuyan, James Hugh Connolly, Zhimin Qi, Jie Zhang, Wei Dou, Aixi Zhang, Mark Saly, Jiang Lu, Rongjun Wang, David Thompson, Xianmin Tang
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Patent number: 11787008Abstract: A polishing station for polishing a substrate using a polishing slurry is disclosed. The polishing station includes a substrate carrier having a substrate-receiving surface and a rotatable platen having a polishing pad disposed on a platen surface, where the polishing pad has a polishing surface facing the substrate-receiving surface. The polishing station includes an electromagnetic assembly disposed over the platen surface. The electromagnetic assembly includes an array of electromagnetic devices that are each operable to generate a magnetic field that is configured to pass through the polishing surface. The magnetic fields generated by the array of electromagnetic devices are oriented and configured to induce an electromagnetic force on a plurality of charged particles disposed in a polishing slurry disposed on the polishing surface. The applied magnetic field is configured to induce movement of the plurality of charged particles in a direction parallel or orthogonal to the polishing surface.Type: GrantFiled: December 18, 2020Date of Patent: October 17, 2023Assignee: Applied Materials, Inc.Inventors: Xingfeng Wang, Jianshe Tang, Feng Q. Liu, David M. Gage, Stephen Jew
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Publication number: 20230317516Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a metal-carbonyl containing precursor to form a self-assembled monolayer (SAM) on metallic surfaces.Type: ApplicationFiled: July 14, 2022Publication date: October 5, 2023Applicant: Applied Materials, Inc.Inventors: Muthukumar Kaliappan, Michael Haverty, Bhaskar Jyoti Bhuyan, Mark Saly, Aaron Dangerfield, Michael L. McSwiney, Feng Q. Liu, Xiangjin Xie
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Publication number: 20230295794Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.Type: ApplicationFiled: May 24, 2023Publication date: September 21, 2023Inventors: Lakmal C. Kalutarage, Bhaskar Jyoti Bhuyan, Aaron Dangerfield, Feng Q. Liu, Mark Saly, Michael Haverty, Muthukumar Kaliappan
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Patent number: 11760768Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: GrantFiled: April 21, 2021Date of Patent: September 19, 2023Assignee: Applied Materials, Inc.Inventors: Chandan Kr Barik, John Sudijono, Chandan Das, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan, Feng Q. Liu
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Publication number: 20230227975Abstract: Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RIx, where R is one or more of a C1-C10 alkyl, C3-C10 cycloalkyl, C2-C10 alkenyl, or C2-C10 alkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.Type: ApplicationFiled: December 30, 2021Publication date: July 20, 2023Applicant: Applied Materials, Inc.Inventors: Feng Q. Liu, Mark Saly, David Thompson, Annamalai Lakshmanan, Avgerinos V. Gelatos, Joung Joo Lee
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Publication number: 20230227968Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.Type: ApplicationFiled: March 27, 2023Publication date: July 20, 2023Applicant: Applied Materials, Inc.Inventors: Feng Q. Liu, Hua Chung, Schubert Chu, Mei Chang, Jeffrey W. Anthis, David Thompson
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Patent number: 11702733Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.Type: GrantFiled: May 7, 2021Date of Patent: July 18, 2023Assignee: Applied Materials, Inc.Inventors: Lakmal C. Kalutarage, Bhaskar Jyoti Bhuyan, Aaron Dangerfield, Feng Q. Liu, Mark Saly, Michael Haverty, Muthukumar Kaliappan
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Patent number: 11643721Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.Type: GrantFiled: September 12, 2018Date of Patent: May 9, 2023Assignee: Applied Materials, Inc.Inventors: Feng Q. Liu, Hua Chung, Schubert Chu, Mei Chang, Jeffrey W. Anthis, David Thompson
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Publication number: 20230025937Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.Type: ApplicationFiled: September 29, 2022Publication date: January 26, 2023Applicant: Applied Materials, Inc.Inventors: Yixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu, Jeffrey W. Anthis, David Thompson, Jacqueline S. Wrench, Naomi Yoshida
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Publication number: 20230002888Abstract: Methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising a metal selected from the group consisting of molybdenum (Mo), tungsten (W), osmium (Os), rhenium (Re), iridium (Ir), nickel (Ni) and ruthenium (Ru) and an iodine-containing reactant comprising a species having a formula RIx, where R is one or more of a C0-C10 alkyl, cycloalkyl, alkenyl, or alkynyl group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film; and exposing the carbon-less iodine-containing metal film to a reductant to form a metal film. Some embodiments deposit a metal film with greater than or equal to 90% metal species on an atomic basis.Type: ApplicationFiled: July 1, 2021Publication date: January 5, 2023Applicant: Applied Materials, Inc.Inventors: Feng Q. Liu, Mark Saly, David Thompson
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Publication number: 20220372616Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.Type: ApplicationFiled: May 7, 2021Publication date: November 24, 2022Applicant: Applied Materials, Inc.Inventors: Lakmal C. Kalutarage, Bhaskar Jyoti Bhuyan, Aaron Dangerfield, Feng Q. Liu, Mark Saly, Michael Haverty, Muthukumar Kaliappan
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Publication number: 20220356197Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: ApplicationFiled: April 21, 2021Publication date: November 10, 2022Applicant: Applied Materials, Inc.Inventors: Chandan Kr Barik, John Sudijono, Chandan Das, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan, Feng Q. Liu
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Patent number: 11488830Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.Type: GrantFiled: August 23, 2019Date of Patent: November 1, 2022Assignee: Applied Materials, Inc.Inventors: Yixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu, Jeffrey W. Anthis, David Thompson, Jacqueline S. Wrench, Naomi Yoshida