Patents by Inventor Feng Q. Pan

Feng Q. Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatuses for modulating threshold voltages of memory cells
    Patent number: 10431270
    Abstract: Apparatuses for increasing the voltage budget window of a memory array are described. One or more pre-bias voltages may be applied across a selected cell by providing voltages to memory access lines coupled to the selected cell. The threshold voltage of the selected cell may decrease responsive to the pre-bias voltage. Conversely, threshold voltage of deselected cells coupled to only one of the memory access lines coupled to the selected cell may increase responsive to the pre-bias voltage. The decrease of the threshold voltage of the selected cell and the increase of the threshold voltage of the deselected cells may increase the voltage window of the memory array.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: October 1, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Davide Mantegazza, Kiran Pangal, Feng Q. Pan, Hernan A. Castro, DerChang Kau
  • APPARATUSES FOR MODULATING THRESHOLD VOLTAGES OF MEMORY CELLS
    Publication number: 20180151206
    Abstract: Apparatuses for increasing the voltage budget window of a memory array are described. One or more pre-bias voltages may be applied across a selected cell by providing voltages to memory access lines coupled to the selected cell. The threshold voltage of the selected cell may decrease responsive to the pre-bias voltage. Conversely, threshold voltage of deselected cells coupled to only one of the memory access lines coupled to the selected cell may increase responsive to the pre-bias voltage. The decrease of the threshold voltage of the selected cell and the increase of the threshold voltage of the deselected cells may increase the voltage window of the memory array.
    Type: Application
    Filed: December 29, 2017
    Publication date: May 31, 2018
    Applicant: Micron Technology, Inc.
    Inventors: Davide Mantegazza, Kiran Pangal, Feng Q. Pan, Hernan A. Castro, DerChang Kau
  • Methods and apparatuses for modulating threshold voltages of memory cells
    Patent number: 9905280
    Abstract: Methods and apparatuses for increasing the voltage budget window of a memory array are disclosed. One or more pre-bias voltages may be applied across a selected cell by providing voltages to memory access lines coupled to the selected cell. The threshold voltage of the selected cell may decrease responsive to the pre-bias voltage. Conversely, threshold voltage of deselected cells coupled to only one of the memory access lines coupled to the selected cell may increase responsive to the pre-bias voltage. The decrease of the threshold voltage of the selected cell and the increase of the threshold voltage of the deselected cells may increase the voltage window of the memory array.
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: February 27, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Davide Mantegazza, Kiran Pangal, Feng Q. Pan, Hernan A. Castro, DerChang Kau
  • METHODS AND APPARATUSES FOR MODULATING THRESHOLD VOLTAGES OF MEMORY CELLS
    Publication number: 20170221536
    Abstract: Methods and apparatuses for increasing the voltage budget window of a memory array are disclosed. One or more pre-bias voltages may be applied across a selected cell by providing voltages to memory access lines coupled to the selected cell. The threshold voltage of the selected cell may decrease responsive to the pre-bias voltage. Conversely, threshold voltage of deselected cells coupled to only one of the memory access lines coupled to the selected cell may increase responsive to the pre-bias voltage. The decrease of the threshold voltage of the selected cell and the increase of the threshold voltage of the deselected cells may increase the voltage window of the memory array.
    Type: Application
    Filed: April 18, 2017
    Publication date: August 3, 2017
    Applicant: Micron Technology, Inc.
    Inventors: Davide Mantegazza, Kiran Pangal, Feng Q. Pan, Hernan A. Castro, DerChang Kau
  • Methods and apparatuses for modulating threshold voltages of memory cells
    Patent number: 9653127
    Abstract: Methods and apparatuses for increasing the voltage budget window of a memory array are disclosed. One or more pre-bias voltages may be applied across a selected cell by providing voltages to memory access lines coupled to the selected cell. The threshold voltage of the selected cell may decrease responsive to the pre-bias voltage. Conversely, threshold voltage of deselected cells coupled to only one of the memory access lines coupled to the selected cell may increase responsive to the pre-bias voltage. The decrease of the threshold voltage of the selected cell and the increase of the threshold voltage of the deselected cells may increase the voltage window of the memory array.
    Type: Grant
    Filed: December 15, 2015
    Date of Patent: May 16, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Davide Mantegazza, Kiran Pangal, Feng Q. Pan, Hernan A. Castro, DerChang Kau