Patents by Inventor Feng Ru

Feng Ru has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250023646
    Abstract: A test equipment includes a selection register configured to store a selection index determined based on a selection command, a first tester channel including a first waveform driving device, and a second tester channel including a second waveform driving device. Each of the first tester channel and the second tester channel is multiplexed by a plurality of Device Under Test (DUTs). The first waveform driving device and the second waveform driving device are coupled to the selection register. The first waveform driving device is configured to generate, based on a driving source signal, a first waveform signal for driving multiple of first pins of the plurality of DUTs, and control, based on the selection index and a first bit map corresponding to the first tester channel, an output of the first waveform signal through the first tester channel.
    Type: Application
    Filed: September 27, 2024
    Publication date: January 16, 2025
    Inventors: Yangyang Zhang, Feng Ru, Yi Chen, Mengda Wang
  • Patent number: 12136958
    Abstract: In certain aspects, a waveform driving device for a tester channel includes a waveform generator, a bit map register, and an output logic circuit. The waveform generator is configured to generate a waveform signal based on a driving source signal. The bit map register is configured to store a bit map associated with the tester channel. The output logic circuit is coupled to the bit map register and the waveform generator, and configured to control an output of the waveform signal through the tester channel based on a bit control signal from the bit map.
    Type: Grant
    Filed: December 1, 2021
    Date of Patent: November 5, 2024
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Yangyang Zhang, Feng Ru, Yi Chen, Mengda Wang
  • Publication number: 20240230756
    Abstract: In certain aspects, a pattern generation system includes a memory and a processor coupled to the memory. The memory is configured to store a lookup table set. The lookup table set includes a mapping relationship between source patterns and a set of test channels, and is indexed based on a pin function index. The processor is configured to generate the source patterns, execute a pin-mapping operation based on an instruction to obtain a set of source selection signals for the set of test channels based on the pin function index and the lookup table set, and select and output a source signal from the source patterns for each test channel based on a corresponding source selection signal for the respective test channel.
    Type: Application
    Filed: March 25, 2024
    Publication date: July 11, 2024
    Inventors: Feng Ru, Xiang Xu, Yangyang Zhang, Mengda Wang
  • Patent number: 11977115
    Abstract: In certain aspects, a pattern generation system includes a pattern generator, a memory, a pin function register, a pin function mapper, and a set of source selectors. The pattern generator generates a plurality of source patterns. The memory stores a lookup table set. The lookup table set describes a mapping relationship between the plurality of source patterns and a set of test channels, and is indexed based on a pin function index. The pin function register stores a value of the pin function index. The pin function mapper executes a pin-mapping operation to generate a set of source selection signals based on the value of the pin function index and the lookup table set. Each source selector selects and outputs a source signal from the plurality of source patterns to a corresponding test channel based on a corresponding source selection signal received from the pin function mapper.
    Type: Grant
    Filed: May 4, 2021
    Date of Patent: May 7, 2024
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Feng Ru, Xiang Xu, Yangyang Zhang, Mengda Wang
  • Publication number: 20230133863
    Abstract: In certain aspects, a waveform driving device for a tester channel includes a waveform generator, a bit map register, and an output logic circuit. The waveform generator is configured to generate a waveform signal based on a driving source signal. The bit map register is configured to store a bit map associated with the tester channel. The output logic circuit is coupled to the bit map register and the waveform generator, and configured to control an output of the waveform signal through the tester channel based on a bit control signal from the bit map.
    Type: Application
    Filed: December 1, 2021
    Publication date: May 4, 2023
    Inventors: Yangyang Zhang, Feng Ru, Yi Chen, Mengda Wang
  • Publication number: 20220317185
    Abstract: In certain aspects, a pattern generation system includes a pattern generator, a memory, a pin function register, a pin function mapper, and a set of source selectors. The pattern generator generates a plurality of source patterns. The memory stores a lookup table set. The lookup table set describes a mapping relationship between the plurality of source patterns and a set of test channels, and is indexed based on a pin function index. The pin function register stores a value of the pin function index. The pin function mapper executes a pin-mapping operation to generate a set of source selection signals based on the value of the pin function index and the lookup table set. Each source selector selects and outputs a source signal from the plurality of source patterns to a corresponding test channel based on a corresponding source selection signal received from the pin function mapper.
    Type: Application
    Filed: May 4, 2021
    Publication date: October 6, 2022
    Inventors: Feng Ru, Xiang Xu, Yangyang Zhang, Mengda Wang
  • Patent number: 6887793
    Abstract: A method for plasma etching a wafer after a backside grinding process which incorporates an oxidation pretreatment step is disclosed. The method includes the step of first grinding a backside of a wafer to expose a bare silicon surface. The bare silicon surface is then oxidized in an oxidation chamber to form a substantially uniform silicon oxide layer of at least 50 ? thick, and preferably at least 100 ? thick. The wafer is then positioned in a plasma etch chamber with an active surface of the wafer exposed, and a surface layer etched away by an oxygen plasma without causing any further silicon oxide formation on the backside of the wafer. The present invention novel plasma etching method can be advantageously used for removing an organic material layer, such as a photoresist layer from a wafer surface.
    Type: Grant
    Filed: May 29, 2002
    Date of Patent: May 3, 2005
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Feng-Ru Chang, Gau-Ming Lu, Yeong-Rong Chang
  • Publication number: 20030224583
    Abstract: A method for plasma etching a wafer after a backside grinding process which incorporates an oxidation pretreatment step is disclosed. The method includes the step of first grinding a backside of a wafer to expose a bare silicon surface. The bare silicon surface is then oxidized in an oxidation chamber to form a substantially uniform silicon oxide layer of at least 50 Å thick, and preferably at least 100 Å thick. The wafer is then positioned in a plasma etch chamber with an active surface of the wafer exposed, and a surface layer etched away by an oxygen plasma without causing any further silicon oxide formation on the backside of the wafer. The present invention novel plasma etching method can be advantageously used for removing an organic material layer, such as a photoresist layer from a wafer surface.
    Type: Application
    Filed: May 29, 2002
    Publication date: December 4, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Feng-Ru Chang, Gau-Ming Lu, Yeong-Rong Chang
  • Patent number: 6590295
    Abstract: A microelectronic device including a substrate having a top metal layer, a first passivation layer overlying the substrate and wherein the passivation layer includes a via defined at least in part by a side wall of the passivation layer, and wherein the via overlies the top metal layer, a dielectric spacer positioned the via and the spacer having and inner wall with arcuate shape, an the electrically conductive redistribution layer having a portion positioned overlying the inner wall of the spacer and wherein the redistribution layer includes a portion in electrical contact with the top metal layer.
    Type: Grant
    Filed: June 11, 2002
    Date of Patent: July 8, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hung-Che Liao, Chin-Kang Lee, Tao-Sheng Chang, Feng-Ru Chang