Patents by Inventor Feng-Wei Ku

Feng-Wei Ku has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming an arsenic doped dielectric layer
    Patent number: 6323137
    Abstract: A method of forming an arsenic doped oxide layer in a process chamber is disclosed. The method comprises the steps of: setting the process chamber to a temperature of approximately 400-500° C. and a pressure of about 40-250 torr; flowing tetraethylorthosilicate (TEOS) into the process chamber; flowing triethylarsenate (TEAS or TEASAT) into the process chamber; and flowing ozone into the process chamber.
    Type: Grant
    Filed: March 3, 2000
    Date of Patent: November 27, 2001
    Assignee: ProMOS Technologies
    Inventors: Feng-Wei Ku, Chia-Lin Ku