Patents by Inventor Feng Ye
Feng Ye has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12729664Abstract: Techniques for operating a wind farm include setting an area of interest, a forecast interval, and a maximum lag time for using mesoscale forecasts. Mesoscale forecasts are collected for a training time interval TT at model grid locations. TT is at least ten times the maximum lag time. Fine-scale wind measurements are collected in the area during TT. Selected parameters of the mesoscale forecasts, and coefficients of an evolving ML forecast model are determined based on the mesoscale forecasts and the fine-scale wind measurements during the TT ending at the current time. Then, the coefficients and the mesoscale forecast for the selected parameters during the lag time produce a forecast wind at the wind turbines during the forecast interval. Operation of the wind farm is based on the forecast wind.Type: GrantFiled: September 10, 2023Date of Patent: September 8, 2026Assignee: RUTGERS, THE STATE UNIVERSITY OF NEW JERSEYInventors: Ahmed Aziz Ezzat, Feng Ye, Joseph F. Brodie, Travis Miles
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Patent number: 12733265Abstract: Implementations relating to a back contact solar cell and its preparation method are provided in this disclosure. In an implementation, a back contact solar cell includes a silicon substrate having a first surface. The first surface comprises a first conductive region, a second conductive region, and an insulation region located between the first conductive region and the second conductive region. The back contact solar cell further comprises a first transport layer located on the first conductive region and a second transport layer located on the second conductive region. The second transport layer extends from the second conductive region through the insulation region to the first conductive region, and partially covers the first transport layer, wherein a thickness of a first portion of the second transport layer located on the insulation region is greater than a thickness of a second portion of the second transport layer located on the second conductive region.Type: GrantFiled: April 9, 2025Date of Patent: September 8, 2026Assignee: LONGi Green Energy Technology Co., Ltd.Inventors: Zhenguo Li, Fei Luo, Tuan Yuan, Shuai Wu, Jinsheng Zhang, Feng Ye, Liang Fang
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Patent number: 12723422Abstract: A swimming pool frame includes a plurality of side members connected together to form a frame bounding an interior area, a plurality of leg members, and a plurality of joints. Each joint is connected between two adjacent side members, and a leg member is connected to each joint. Each of the side members and leg members have a non-circular cross-sectional profile that include shapes such as polygonal or elliptical shapes, and each joint includes similarly-shaped side member insertion channels and a leg member insertion channel. Each end of each side member is adapted to be inserted into a side member insertion channel of the joint, and an upper end of each leg member is adapted to be inserted into the leg member insertion channel. A retention pin is connected between each side member insertion channel and a corresponding side member.Type: GrantFiled: April 9, 2024Date of Patent: September 1, 2026Assignee: BESTWAY INFLATABLES & MATERIAL CORP.Inventors: Xiaobo Chen, Hongjiang Xiong, Zhipeng Dai, Feng Ye
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Patent number: 12693897Abstract: A method implemented by a multi-access edge computing (MEC) distributed controller includes receiving a MEC computing task request for execution of a service on MEC nodes controlled by the MEC distributed controller; obtaining mobile device geo-location information associated with the mobile device; determining an execution plan and a pool of MEC nodes, the execution plan and the pool of MEC nodes being for the execution of the service, the determining being in accordance with the mobile device geo-location information; scheduling the execution plan for the pool of MEC nodes; and deploying the scheduled execution plan.Type: GrantFiled: May 16, 2023Date of Patent: July 28, 2026Assignee: HUAWEI TECHNOLOGIES CO., LTD.Inventors: Jiafeng Zhu, Jie Shen, Liya Chen, Feng Ye
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Publication number: 20260201500Abstract: A full hydrometallurgical process for recovering metals from complex rare-precious material includes: adding the material to hydrochloric acid solution, adding oxidant, filtering to obtain chloride solution and chloride residue; using two-stage countercurrent gold loading to obtain gold-loaded solution and post-loading solution, reducing the gold-loaded solution, clarifying and filtering to separate organic phase, post-reduction solution and sponge gold; evaporating and concentrating the post-reduction solution to produce concentrated solution 1 and condensate, cooling and crystallizing the concentrated solution, returning filtered residual oxalic acid to reduction process, and returning post-crystallization solution to gold-loading process; low-temperature distilling the post-loading solution to obtain concentrated solution 2; high-temperature distilling the concentrated solution 2 to obtain concentrated solution 3; performing directional crystallization and centrifugal filtration on the concentrated solutioType: ApplicationFiled: March 9, 2026Publication date: July 16, 2026Inventors: Yongchun LUO, Zihui MA, Feng YE, Bing CAI, Lei TAO, Rundong WANG, Yong YANG, Shaozeng PU, Xianhui ZHOU, Langlang WANG
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Patent number: 12672358Abstract: A solar cell, a manufacturing method, and a photovoltaic module are provided. In one aspect, an solar cell includes a silicon substrate, a first transport layer, and a carrier collection layer. The silicon substrate has a first surface and a second surface opposite to each other. The first transport layer is arranged on at least one of the first surface and the second surface. The first transport layer includes a polysilicon layer having an amorphous silicon region. The amorphous silicon region is arranged on at least a part of a surface of the polysilicon layer away from the silicon substrate. The carrier collection layer is arranged on the first transport layer, and at least a part of the carrier collection layer is in contact with the amorphous silicon region.Type: GrantFiled: April 17, 2025Date of Patent: June 30, 2026Assignee: LONGi Green Energy Technology Co., Ltd.Inventors: Zhaoqing Sun, Shenghou Zhou, Xiyan Tang, Junjun Li, Bingxuan He, Feng Ye, Chaowei Xue, Liang Fang
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Publication number: 20260136702Abstract: The present application discloses a back contact cell and a method for manufacturing same. The back contact cell includes a silicon substrate. A plurality of first regions and a plurality of second regions are sequentially and alternately disposed on a back surface of the silicon substrate. A first semiconductor layer is disposed on each of the first regions. A second semiconductor layer is disposed on each of the second regions. The first semiconductor layer is connected to a first transparent electrode pattern. The second semiconductor layer is connected to a second transparent electrode pattern. The first transparent electrode pattern and the second transparent electrode pattern are consistently isolated by a first gap.Type: ApplicationFiled: April 28, 2025Publication date: May 14, 2026Inventors: Qing TANG, Qishu XU, Shi YIN, Feng YE, Liang FANG
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Publication number: 20260136680Abstract: A solar cell, a manufacturing method, and a photovoltaic module are provided. In one aspect, an solar cell includes a silicon substrate, a first transport layer, and a carrier collection layer. The silicon substrate has a first surface and a second surface opposite to each other. The first transport layer is arranged on at least one of the first surface and the second surface. The first transport layer includes a polysilicon layer having an amorphous silicon region. The amorphous silicon region is arranged on at least a part of a surface of the polysilicon layer away from the silicon substrate. The carrier collection layer is arranged on the first transport layer, and at least a part of the carrier collection layer is in contact with the amorphous silicon region.Type: ApplicationFiled: April 17, 2025Publication date: May 14, 2026Inventors: Zhaoqing SUN, Shenghou ZHOU, Xiyan TANG, Junjun LI, Bingxuan HE, Feng YE, Chaowei XUE, Liang FANG
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Publication number: 20260092593Abstract: Techniques for operating a wind farm include setting an area of interest, a forecast interval, and a maximum lag time for using mesoscale forecasts. Mesoscale forecasts are collected for a training time interval TT at model grid locations. TT is at least ten times the maximum lag time. Fine-scale wind measurements are collected in the area during TT. Selected parameters of the mesoscale forecasts, and coefficients of an evolving ML forecast model are determined based on the mesoscale forecasts and the fine-scale wind measurements during the TT ending at the current time. Then, the coefficients and the mesoscale forecast for the selected parameters during the lag time produce a forecast wind at the wind turbines during the forecast interval. Operation of the wind farm is based on the forecast wind.Type: ApplicationFiled: September 10, 2023Publication date: April 2, 2026Inventors: Ahmed Aziz EZZAT, Feng YE, Joseph F. BRODIE, Travis Miles
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Publication number: 20260078770Abstract: A blower with a waterproof function includes a volute casing having a first housing, a second housing, and a volute cavity defined within the volute casing between the first housing and the second housing, an impeller disposed within the volute cavity, and a motor driving the rotation of the impeller, the motor including an output shaft. A sidewall of the second housing of the volute casing further includes a ventilation area disposed adjacent to the motor, the output shaft of the motor passes through the ventilation area and is connected to the impeller, and a water-blocking rib is disposed on a periphery of the ventilation area.Type: ApplicationFiled: July 2, 2025Publication date: March 19, 2026Inventors: Xiaobo CHEN, Zhongfei MAO, Yishan LIU, Xin CHEN, Feng YE
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Publication number: 20260071297Abstract: The present application discloses a gold recovery system and recovery method thereof from a gold separation solution, where the recovery system includes an gold selective extraction system, a reduction system, a washing system, and an evaporation system; and the recovery method specifically includes the following steps: (1) primary extraction; (2) secondary extraction; (3) gold precipitation by reduction; (4) washing of gold powder; and (5) evaporation of waste solution. In the present application, by using chloride ions to recognize AuCl4?, the gold-rich solution is directly reduced to produce qualified gold powder product (99.995%); the gold-barren solution and the post-reduction solution are evaporated and concentrated, with the condensate reused to realize the recovery and regeneration of chloride ions, the recycling of the extractant and no generation of waste solution or waste gas in the production process.Type: ApplicationFiled: November 14, 2025Publication date: March 12, 2026Inventors: BING CAI, XIANHUI ZHOU, YONGCHUN LUO, FENG YE, ZIHUI MA, SHAOZENG PU, GANG CHEN, JIE DOU, KAI LI, JIHANG ZHU, XIANG PU, JIFENG YANG
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Patent number: 12568711Abstract: The present application discloses a back-contact solar cell and a preparation method thereof. The back-contact solar cell includes: a semiconductor substrate; a tunnel oxide layer and a doped crystalline silicon layer, where the tunnel oxide layer is located in a first region, and the doped crystalline silicon layer is located on a surface of the tunnel oxide layer away from the semiconductor substrate; an intrinsic non-crystalline silicon layer and a doped non-crystalline silicon layer where the intrinsic non-crystalline silicon layer is located in a second region and extends on part of a surface of the doped crystalline silicon layer away from the tunnel oxide layer, and the doped non-crystalline silicon layer is located on a surface of the intrinsic non-crystalline silicon layer away from the semiconductor substrate; and an isolating structure including an isolating layer and an isolating groove.Type: GrantFiled: July 14, 2023Date of Patent: March 3, 2026Assignee: LONGi Green Energy Technology Co., Ltd.Inventors: Dongwei Zhang, Shuai Wu, Yunpeng Li, Feng Ye, Liang Fang, Xixiang Xu
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Publication number: 20260020371Abstract: The present application discloses a back contact solar cell, a manufacturing method therefor, and a photovoltaic module. The back contact solar cell includes: a semiconductor substrate, a transparent conductive layer, and an isolating protective structure. The semiconductor substrate comprises a first surface and a second surface, wherein the second surface comprises N-type regions and P-type regions alternately distributed and separated by isolating regions. The transparent conductive layer covers the second surface, wherein isolating grooves running through the transparent conductive layer are respectively formed on the isolating regions. The isolating grooves isolate parts of the transparent conductive layer located on the N-type regions from parts of the transparent conductive layer located on the P-type regions. The transparent conductive layer comprises a turned-up part close to an edge of the isolating grooves that is turned upwards along a direction facing away from the semiconductor substrate.Type: ApplicationFiled: September 19, 2025Publication date: January 15, 2026Inventors: Shenghou ZHOU, Xiyan TANG, Zhaoqing SUN, Xiaoyu DENG, Liang FANG, Feng YE, Xixiang XU
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Publication number: 20260006940Abstract: The present application discloses a back-contact solar cell and a preparation method thereof. The back-contact solar cell includes: a semiconductor substrate; a tunnel oxide layer and a doped crystalline silicon layer, where the tunnel oxide layer is located in a first region, and the doped crystalline silicon layer is located on a surface of the tunnel oxide layer away from the semiconductor substrate; an intrinsic non-crystalline silicon layer and a doped non-crystalline silicon layer where the intrinsic non-crystalline silicon layer is located in a second region and extends on part of a surface of the doped crystalline silicon layer away from the tunnel oxide layer, and the doped non-crystalline silicon layer is located on a surface of the intrinsic non-crystalline silicon layer away from the semiconductor substrate; and an isolating structure including an isolating layer and an isolating groove.Type: ApplicationFiled: July 14, 2023Publication date: January 1, 2026Inventors: Dongwei ZHANG, Shuai WU, Yunpeng LI, Feng YE, Liang FANG, Xixiang XU
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Publication number: 20250384943Abstract: A method for processing a page fault in memory access includes: sending a first access request, where the first access request is used to access memory, and the first access request includes a first virtual address; receiving the first access request, and sending a first response, where the first response carries page fault information, and the page fault information indicates a fault type of a page fault corresponding to the first virtual address; and receiving the first response, to process a related access request based on the fault type indicated by the page fault information carried in the first response.Type: ApplicationFiled: July 18, 2025Publication date: December 18, 2025Applicant: Huawei Technologies Co., Ltd.Inventors: Feng Ye, Chuanning Cheng
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Patent number: 12446352Abstract: The present disclosure provides a back contact solar cell and a manufacturing method therefor, and a photovoltaic module, In one example, a back contact solar cell includes a semiconductor substrate, a transparent conductive layer, and an isolating protective structure. The semiconductor substrate includes a first surface and a second surface opposite to the first surface. The second surface includes N-type regions and P-type regions alternately distributed at intervals, and an isolating region between each of the N-type regions and a corresponding P-type region. The transparent conductive layer covers the second surface. An isolating groove extending through at least the transparent conductive layer is formed on each isolating region The isolating protective structure is formed on a partial region of a groove bottom of the isolating groove. The isolating protective structure includes at least a material of the transparent conductive layer.Type: GrantFiled: September 1, 2023Date of Patent: October 14, 2025Assignee: LONGi Green Energy Technology Co., Ltd.Inventors: Shenghou Zhou, Xiyan Tang, Zhaoqing Sun, Xiaoyu Deng, Liang Fang, Feng Ye, Xixiang Xu
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Patent number: 12440496Abstract: The present invention relates to Compounds of Formula I: and pharmaceutically acceptable salts or prodrug thereof. The present invention also relates to compositions comprising at least one compound of Formula I, and methods of using the compounds of Formula I for treatment of cardiometabolic diseases including high blood pressure, heart failure, kidney disease, and diabetes in a subject.Type: GrantFiled: May 18, 2020Date of Patent: October 14, 2025Assignee: Merck Sharp & Dohme LLCInventors: Qingmei Hong, Jason E. Imbriglio, Angela D. Kerekes, Tanweer Khan, Claire Lankin, Derun Li, Rui Liang, Pengcheng Patrick Shao, Zhicai Wu, Yusheng Xiong, Feng Ye, Hyewon Youm, Yang Yu, Anthappan Tony Kurissery, Venukrishnan Komanduri
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Patent number: 12406178Abstract: A heat source sensor includes a plurality of first wires extending in a first direction, a plurality of second wires extending in a second direction different from the first direction and crossing the plurality of first wires, and a plurality of nodes. Each node is defined at a crossing of a first wire of the plurality of first wires and a second wire of the plurality of second wires. The first wire is secured to the second wire at the node. Each node of the plurality of nodes defines a measurement point of the heat source sensor, with a difference in thermoelectric electromotive forces between two nodes of the plurality of nodes indicative of a temperature difference between the two nodes.Type: GrantFiled: August 6, 2019Date of Patent: September 2, 2025Assignee: WESTERN NEW ENGLAND UNIVERSITYInventors: Jingzhou Zhao, Feng Ye
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Publication number: 20250261475Abstract: The present disclosure provides a back contact solar cell and a manufacturing method therefor, and a photovoltaic module, In one example, a back contact solar cell includes a semiconductor substrate, a transparent conductive layer, and an isolating protective structure. The semiconductor substrate includes a first surface and a second surface opposite to the first surface. The second surface includes N-type regions and P-type regions alternately distributed at intervals, and an isolating region between each of the N-type regions and a corresponding P-type region. The transparent conductive layer covers the second surface. An isolating groove extending through at least the transparent conductive layer is formed on each isolating region The isolating protective structure is formed on a partial region of a groove bottom of the isolating groove. The isolating protective structure includes at least a material of the transparent conductive layer.Type: ApplicationFiled: September 1, 2023Publication date: August 14, 2025Inventors: Shenghou ZHOU, Xiyan TANG, Zhaoqing SUN, Xiaoyu DENG, Liang FANG, Feng YE, Xixiang XU
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Publication number: 20250241072Abstract: Implementations relating to a back contact solar cell and its preparation method are provided in this disclosure. In an implementation, a back contact solar cell includes a silicon substrate having a first surface. The first surface comprises a first conductive region, a second conductive region, and an insulation region located between the first conductive region and the second conductive region. The back contact solar cell further comprises a first transport layer located on the first conductive region and a second transport layer located on the second conductive region. The second transport layer extends from the second conductive region through the insulation region to the first conductive region, and partially covers the first transport layer, wherein a thickness of a first portion of the second transport layer located on the insulation region is greater than a thickness of a second portion of the second transport layer located on the second conductive region.Type: ApplicationFiled: April 9, 2025Publication date: July 24, 2025Inventors: Zhenguo LI, Fei LUO, Tuan YUAN, Shuai WU, Jinsheng ZHANG, Feng YE, Liang FANG