Patents by Inventor Feng-Ying Hsu

Feng-Ying Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9536922
    Abstract: A fabricating method of a recess with asymmetric walls includes the steps of providing a substrate comprising a top surface. A recess is formed in the substrate, wherein the recess comprises a first wall, a second wall and a bottom. A patterned mask is formed to cover the substrate. Part of the top surface adjacent to the second wall is exposed through the patterned mask. Finally, the substrate is removed to form a sloping wall, wherein the sloping wall, the first wall and the bottom form a recess with asymmetric walls.
    Type: Grant
    Filed: December 2, 2014
    Date of Patent: January 3, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Te Lai, Chih-Hong Wu, Feng-Ying Hsu
  • Publication number: 20160155764
    Abstract: A fabricating method of a recess with asymmetric walls includes the steps of providing a substrate comprising a top surface. A recess is formed in the substrate, wherein the recess comprises a first wall, a second wall and a bottom. A patterned mask is formed to cover the substrate. Part of the top surface adjacent to the second wall is exposed through the patterned mask. Finally, the substrate is removed to form a sloping wall, wherein the sloping wall, the first wall and the bottom form a recess with asymmetric walls.
    Type: Application
    Filed: December 2, 2014
    Publication date: June 2, 2016
    Inventors: Ming-Te Lai, Chih-Hong Wu, Feng-Ying Hsu
  • Patent number: 9341884
    Abstract: The present invention provides a LCOS device including a silicon substrate, a first dielectric layer, a first mirror layer, a second dielectric layer, and a second mirror layer. The first dielectric layer is disposed on the silicon substrate. The first mirror layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first mirror layer. The second mirror layer is disposed on the second dielectric layer.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: May 17, 2016
    Assignee: United Microelectronics Corp.
    Inventors: Yi-Ming Hsu, Feng-Ying Hsu, Chieh-Yu Tsai
  • Publication number: 20150085234
    Abstract: The present invention provides a LCOS device including a silicon substrate, a first dielectric layer, a first mirror layer, a second dielectric layer, and a second mirror layer. The first dielectric layer is disposed on the silicon substrate. The first mirror layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first mirror layer. The second minor layer is disposed on the second dielectric layer.
    Type: Application
    Filed: September 23, 2013
    Publication date: March 26, 2015
    Applicant: United Microelectronics Corp.
    Inventors: Yi-Ming Hsu, Feng-Ying Hsu, Chieh-Yu Tsai