Patents by Inventor Feng-Yu CHEN
Feng-Yu CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240088155Abstract: A semiconductor device includes source/drain regions, a gate structure, a first gate spacer, and a dielectric material. The source/drain regions are over a substrate. The gate structure is laterally between the source/drain regions. The first gate spacer is on a first sidewall of the gate structure, and spaced apart from a first one of the source/drain regions at least in part by a void region. The dielectric material is between the first one of the source/drain regions and the void region. The dielectric material has a gradient ratio of a first chemical element to a second chemical element.Type: ApplicationFiled: November 15, 2023Publication date: March 14, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Bo-Yu LAI, Kai-Hsuan LEE, Wei-Yang LEE, Feng-Cheng YANG, Yen-Ming CHEN
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Publication number: 20240079558Abstract: A method of manufacturing a positive electrode material has the steps of synthesizing an iron metal in a phosphoric acid solution to form an iron phosphate dispersion solution; adding a vanadium pentoxide (V2O5), a non-ionic surfactant and a carbon source to the iron phosphate dispersion solution; and adding a lithium salt to the iron phosphate dispersion solution and then grinding and dispersing it to produce a positive electrode material. By regulating the timing of the addition of vanadium pentoxide (V2O5), the present invention enables the battery made of the positive electrode material to have the advantage of higher battery performance.Type: ApplicationFiled: June 21, 2023Publication date: March 7, 2024Inventors: Chao-Nan Wei, Feng-Yen Tsai, Ya-Hui Wang, Han-Yu Chen
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Publication number: 20240021453Abstract: A method includes transferring a tool monitoring device over a load port of a tool. A bottom of the tool monitoring device has a plurality of holes, and the load port comprises a plurality of pins at a top surface of the load port. The tool monitoring device is placed on the top surface of the load port. The pins at the top surface of the load port are plugged into the holes of the tool monitoring device. Heights of the pins are sensed to identifying a type of the load port after the tool monitoring device is placed on the top surface of the load port. An environment around the load port is monitored by using the tool monitoring device.Type: ApplicationFiled: July 28, 2023Publication date: January 18, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hom-Chung LIN, Chi-Ying CHANG, Jih-Churng TWU, Chin-Yun CHEN, Yi-Ting CHANG, Feng-Yu CHEN
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Patent number: 11804392Abstract: A method includes transferring a tool monitoring device to a load port of a tool. An environmental parameter of the load port is monitored by the tool monitoring device. The tool monitoring device is removed from the load port after the environmental parameter of the load port is monitored. A door of the tool in front of the load port is closed. The door of the tool is kept closed during a period from a time of transferring the tool monitoring device to the load port to a time of removing the tool monitoring device from the load port.Type: GrantFiled: January 4, 2022Date of Patent: October 31, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hom-Chung Lin, Chi-Ying Chang, Jih-Churng Twu, Chin-Yun Chen, Yi-Ting Chang, Feng-Yu Chen
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Publication number: 20220130697Abstract: A method includes transferring a tool monitoring device to a load port of a tool. An environmental parameter of the load port is monitored by the tool monitoring device. The tool monitoring device is removed from the load port after the environmental parameter of the load port is monitored. A door of the tool in front of the load port is closed. The door of the tool is kept closed during a period from a time of transferring the tool monitoring device to the load port to a time of removing the tool monitoring device from the load port.Type: ApplicationFiled: January 4, 2022Publication date: April 28, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hom-Chung LIN, Chi-Ying CHANG, Jih-Churng TWU, Chin-Yun CHEN, Yi-Ting CHANG, Feng-Yu CHEN
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Patent number: 11239099Abstract: In some embodiments, a system for monitoring a tool is provided. The system includes a tool monitoring device, a transporting system and an external apparatus. The tool monitoring device is configured to monitor an environmental parameter of a load port of a tool. The tool monitoring device includes a wafer pod and a monitoring module disposed in the wafer pod. The monitoring module includes at least one sensor, a computer coupled to the at least one sensor, a power supply electrically coupled to the at least one sensor and the computer, and a wireless unit coupled to the computer. The transporting system is configured to transfer the tool monitoring device from one load port to another load port. The external apparatus is coupled to the tool monitoring device.Type: GrantFiled: August 13, 2019Date of Patent: February 1, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hom-Chung Lin, Chi-Ying Chang, Jih-Churng Twu, Chin-Yun Chen, Yi-Ting Chang, Feng-Yu Chen
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Patent number: 11133207Abstract: A method for forming a film is provided. The method includes sequentially placing a first wafer, a second wafer, and a third wafer in a chamber. The first wafer is separated from the second wafer by a first distance, the second wafer is separated from the third wafer by a second distance, and the first distance is smaller than the second distance. At least one process gas is introduced sequentially passing through the first wafer, the second wafer and the third wafer in the chamber.Type: GrantFiled: May 22, 2019Date of Patent: September 28, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Bin Yang, Feng-Yu Chen, Jian-Lun Lo
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Patent number: 10930527Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers in a furnace. The furnace includes a first end thermal zone, a middle thermal zone and a second end thermal zone arranged in sequence. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. The method also includes supplying a purging gas into the furnace after the formation of the thin film. In addition, the method includes controlling the temperature of the furnace in a second thermal mode during the supply of the purging gas. The temperature distributions of the furnace are different in the first and second thermal modes.Type: GrantFiled: June 12, 2020Date of Patent: February 23, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Jian-Lun Lo, Jih-Churng Twu, Feng-Yu Chen, Yuan-Hsiao Su, Yi-Chi Huang, Yueh-Ting Yang, Shu-Han Chao
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Publication number: 20200312685Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers in a furnace. The furnace includes a first end thermal zone, a middle thermal zone and a second end thermal zone arranged in sequence. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. The method also includes supplying a purging gas into the furnace after the formation of the thin film. In addition, the method includes controlling the temperature of the furnace in a second thermal mode during the supply of the purging gas. The temperature distributions of the furnace are different in the first and second thermal modes.Type: ApplicationFiled: June 12, 2020Publication date: October 1, 2020Inventors: Jian-Lun LO, Jih-Churng TWU, Feng-Yu CHEN, Yuan-Hsiao SU, Yi-Chi HUANG, Yueh-Ting YANG, Shu-Han CHAO
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Patent number: 10741426Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. In the first thermal mode, a first end thermal zone, a middle thermal zone and a second end thermal zone of the furnace which are arranged in sequence have a gradually increasing temperature. The method also includes controlling the temperature of the furnace in a second thermal mode after the formation of the thin film. In the second thermal mode, the first end thermal zone, the middle thermal zone and the second end thermal zone of the furnace have a gradually decreasing temperature.Type: GrantFiled: February 27, 2018Date of Patent: August 11, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jian-Lun Lo, Jih-Churng Twu, Feng-Yu Chen, Yuan-Hsiao Su, Yi-Chi Huang, Yueh-Ting Yang, Shu-Han Chao
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Publication number: 20200105555Abstract: In some embodiments, a system for monitoring a tool is provided. The system includes a tool monitoring device, a transporting system and an external apparatus. The tool monitoring device is configured to monitor an environmental parameter of a load port of a tool. The tool monitoring device includes a wafer pod and a monitoring module disposed in the wafer pod. The monitoring module includes at least one sensor, a computer coupled to the at least one sensor, a power supply electrically coupled to the at least one sensor and the computer, and a wireless unit coupled to the computer. The transporting system is configured to transfer the tool monitoring device from one load port to another load port. The external apparatus is coupled to the tool monitoring device.Type: ApplicationFiled: August 13, 2019Publication date: April 2, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hom-Chung LIN, Chi-Ying CHANG, Jih-Churng TWU, Chin-Yun CHEN, Yi-Ting CHANG, Feng-Yu CHEN
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Publication number: 20200075372Abstract: A wafer boat includes at least one support member, at least one set of at least one first fixture member, at least one set of at least one second fixture member, and at least one set of at least one third fixture member. The support member extends in a direction. The set of the first fixture member, the set of the second fixture member, and the set of the third fixture member are supported by the support member and sequentially arranged in the direction. The set of the first fixture member is separated from the set of the second fixture member by a first pitch, and the set of the second fixture member is separated from the set of the third fixture member by a second pitch, in which the first pitch is smaller than the second pitch.Type: ApplicationFiled: May 22, 2019Publication date: March 5, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Bin YANG, Feng-Yu CHEN, Jian-Lun LO
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Publication number: 20190096714Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. In the first thermal mode, a first end thermal zone, a middle thermal zone and a second end thermal zone of the furnace which are arranged in sequence have a gradually increasing temperature. The method also includes controlling the temperature of the furnace in a second thermal mode after the formation of the thin film. In the second thermal mode, the first end thermal zone, the middle thermal zone and the second end thermal zone of the furnace have a gradually decreasing temperature.Type: ApplicationFiled: February 27, 2018Publication date: March 28, 2019Inventors: Jian-Lun LO, Jih-Churng TWU, Feng-Yu CHEN, Yuan-Hsiao SU, Yi-Chi HUANG, Yueh-Ting YANG, Shu-Han CHAO