Abstract: A method of manufacturing a positive electrode material has the steps of synthesizing an iron metal in a phosphoric acid solution to form an iron phosphate dispersion solution; adding a vanadium pentoxide (V2O5), a non-ionic surfactant and a carbon source to the iron phosphate dispersion solution; and adding a lithium salt to the iron phosphate dispersion solution and then grinding and dispersing it to produce a positive electrode material. By regulating the timing of the addition of vanadium pentoxide (V2O5), the present invention enables the battery made of the positive electrode material to have the advantage of higher battery performance.

Abstract: The present invention provides an omniphobic membrane and application thereof. The omniphobic membrane comprises a porous substrate which has a pore size between 0.4 and 2 ?m, a top coat, and an interface layer between the porous substrate and the top coat, and the omniphobic membrane has a carbon/silicon ratio between 40 and 60, and a hierarchical re-entrant structure. Furthermore, both of a process for fabricating the omniphobic membrane and a method for desalination of a liquid by membrane distillation are provided in the present invention.

Abstract: The present invention provides an omniphobic membrane and application thereof. The omniphobic membrane comprises a porous substrate which has a pore size between 0.4 and 2 ?m, a top coat, and an interface layer between the porous substrate and the top coat, and the omniphobic membrane has a carbon/silicon ratio between 40 and 60, and a hierarchical re-entrant structure. Furthermore, both of a process for fabricating the omniphobic membrane and a method for desalination of a liquid by membrane distillation are provided in the present invention.

Abstract: A graphene dispersion includes a graphene material and a polymerizable monomer. The polymerizable monomer has a structure including the first part and the second part. The first part is at one end of the structure and includes at least one benzene ring, and the second part is at another end of the structure and has polarity.

Abstract: A graphene dispersion includes a graphene material and a polymerizable monomer. The polymerizable monomer has a structure including the first part and the second part. The first part is at one end of the structure and includes at least one benzene ring, and the second part is at another end of the structure and has polarity.

Abstract: The present invention relates to a method for preparing a titanium oxide film and a method for preparing a composite film comprising a titanium oxide film. Particularly, the present invention relates to a method for preparing the titanium oxide film which serves as a passivation layer for the oxide semiconductor. In the present method for preparing the passivation layer, a low-reactive metal alkoxide compound is used as a precursor to form the passivation layer by the atomic layer deposition. Therefore, the deterioration of the oxide semiconductor during the preparation process may be avoided.

Abstract: The present invention relates to a surface treatment method for an implant, comprising: providing an implant; and forming a ceramic layer on a surface of the implant by atomic layer deposition, wherein the ceramic layer has a thickness of 5-150 nm; a root mean square roughness increase in a range of 15 nm or less; and a friction coefficient of 0.1-0.5. The ceramic layer formed on the surface of the implant can fully encapsulate the surface of the implant with excellent uniformity to effectively block the free metal ions dissociated from the implant. Moreover, it has anti-oxidation and anti-corrosion effects, and greatly enhances the biocompatibility of the implant.

Abstract: Disclosed is an encapsulation film. An inorganic oxide film is formed on an organic sealing layer by an atomic layer deposition (ALD) to form the encapsulation film, wherein the organic sealing layer is a polymer containing hydrophilic groups. The organic sealing layer and the inorganic oxide layer have covalent bondings therebetween. The encapsulation film can solve the moisture absorption problem of conventional organic sealing layers, thereby being suitable for use as a package of optoelectronic devices.

Abstract: Disclosed is a method for making a solar cell. In the method, there are provided first and second substrates each including first and second faces. There are provided first and second coating devices and a joining device. The first coating device is used to form a transparent electrode layer on the first face of the first substrate. The second coating device is used to form an absorbing layer on the first face of the second substrate. The second substrate is selenized by hot pressing. The joining device is used to join together the first and second substrates by joining the transparent electrode layer with the absorbing layer. The transparent electrode layer is joined with the absorbing layer by hot pressing. Thus, the solar cell is not made by coating one layer on another. Time for making the solar cell is reduced.

Abstract: An apparatus for making an absorbing layer of a compound solar cell includes a transportation unit, a coating unit, a heat treatment unit, a measurement unit and a control unit. The transportation unit transports a substrate-based laminate. The coating unit provides coating liquid on the substrate-based laminate. The heat treatment unit treats the coated substrate-based laminate with heat to form a film. The measurement unit measures the film and provides correction parameters to the coating unit. The control unit controls the transportation unit, the coating unit, the heat treatment unit and the measurement unit.

Abstract: A method for forming a transparent conductive film by atomic layer deposition includes providing more than one kind of oxide precursor which is individually introduced into atomic layer deposition equipment through different sources, wherein the oxide precursors are consecutively introduced into the atomic layer deposition equipment at the same time, so that the oxide precursors are simultaneously present in the atomic layer deposition equipment, to form a uniform mixture of oxide precursors in a single adsorbate layer for settling onto a substrate in the atomic layer deposition equipment. Then, an oxidant is provided to react with the oxide precursors to form a single multi-oxide atomic layer. The above mentioned steps are repeated to form a plurality of multi-oxide atomic layers.

Abstract: Disclosed is a method for making a solar cell. In the method, there are provided first and second substrates each including first and second faces. There are provided first and second coating devices and a joining device. The first coating device is used to form a transparent electrode layer on the first face of the first substrate. The second coating device is used to form an absorbing layer on the first face of the second substrate. The second substrate is selenized by hot pressing. The joining device is used to join together the first and second substrates by joining the transparent electrode layer with the absorbing layer. The transparent electrode layer is joined with the absorbing layer by hot pressing. Thus, the solar cell is not made by coating one layer on another. Time for making the solar cell is reduced.

Abstract: Disclosed is an encapsulation film. An inorganic oxide film is formed on an organic sealing layer by an atomic layer deposition (ALD) to form the encapsulation film, wherein the organic sealing layer is a polymer containing hydrophilic groups. The organic sealing layer and the inorganic oxide layer have covalent bondings therebetween. The encapsulation film can solve the moisture absorption problem of conventional organic sealing layers, thereby being suitable for use as a package of optoelectronic devices.

Abstract: This invention discloses that photolithography can be made compatible with the production of electronic devices containing sensitive materials, if the sensitive materials are over-coated with an ultra-thin layer of non-reactive materials (e.g. inorganic oxides) before undergoing photolithographic patterning. This protecting layer isolates the sensitive materials from solvents and etching reactants used in photolithographic patterning, and does not need to be removed from the sensitive materials after patterning is completed. This invention enables photolithography to be applied to the production of electronic devices containing sensitive materials, facilitating the development of commercially viable production processes for these devices.

Abstract: A transparent conductive film and a fabrication method thereof are provided. The transparent conductive film includes a plurality of oxide atomic layers, containing a plurality of multi-oxide atomic layers, wherein a single multi-oxide atomic layer has more than one kind of uniformly mixed oxide. The method includes providing more than one kind of oxide precursor which is individually introduced into atomic layer deposition equipment through different sources, wherein the oxide precursors are consecutively introduced into the atomic layer deposition equipment, so that the oxide precursors are simultaneously present in the atomic layer deposition equipment, forming a uniform mixture for settling onto the substrate. Then, an oxidant is provided to react with the oxide precursors to form a single multi-oxide atomic layer. The above mentioned steps are repeated to form a plurality of multi-oxide atomic layers.

Abstract: The invention provides an organic solar cell, containing a substrate having a first electrode formed thereon, an organic photoactive layer including a crystalline, first organic molecule of a first conductive type and a second molecule of a second conductive type opposite to the first conductive type; and a second electrode overlying the organic photoactive layer. The invention further provides a method for forming the organic solar cell.

Abstract: The invention provides a method for forming a composite membrane, including: (a) loading a substrate into a chamber; (b) performing a first cycle step in the chamber to form a single aluminum oxide (Al2O3) layer; and (c) performing a second cycle step in the chamber to form a single hafnium oxide (HfO2) layer. The steps include: (1) introducing an Al element containing a first reactant into the chamber; (2) removing the first reactant from the chamber; (3) introducing an O element containing a second reactant into the chamber; (4) removing the second reactant from the chamber; (5) introducing an Hf element containing a third reactant into the chamber; and (6) removing the third reactant from the chamber. The first cycle step is composed of steps (1) to (4), and the second cycle step is composed of steps (3) to (6).

Abstract: This invention discloses that photolithography can be made compatible with the production of electronic devices containing sensitive materials, if the sensitive materials are over-coated with an ultra-thin layer of non-reactive materials (e.g. inorganic oxides) before undergoing photolithographic patterning. This protecting layer isolates the sensitive materials from solvents and etching reactants used in photolithographic patterning, and does not need to be removed from the sensitive materials after patterning is completed. This invention enables photolithography to be applied to the production of electronic devices containing sensitive materials, facilitating the development of commercially viable production processes for these devices.

Abstract: A technique is disclosed that combines a bilayered photoresist structure, similar to that which is already in use in the MR head industry, with a post development UV irradiation treatment which reduces the manufacturable feature-size to be below the resolution limit. The technique is compatible with current manufacturing processes, requires no additional investment, and can be extended to ultra-small feature sizes.

Abstract: A technique is disclosed that combines a bilayered photoresist structure, similar to that which is already in use in the MR head industry, with a post development UV irradiation treatment which reduces the manufacturable feature-size to be below the resolution limit. The technique is compatible with current manufacturing processes, requires no additional investment, and can be extended to ultra-small feature sizes.