Abstract: Doping techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a fin structure, forming a doped amorphous layer over a portion of the fin structure, and performing a knock-on implantation process to drive a dopant from the doped amorphous layer into the portion of the fin structure, thereby forming a doped feature. The doped amorphous layer includes a non-crystalline form of a material. In some implementations, the knock-on implantation process crystallizes at least a portion of the doped amorphous layer, such that the portion of the doped amorphous layer becomes a part of the fin structure. In some implementations, the doped amorphous layer includes amorphous silicon, and the knock-on implantation process crystallizes a portion of the doped amorphous silicon layer.

Abstract: The present invention provides a polymer composition for fibers or non-woven fabrics, comprising a vinyl aromatic based copolymer and 0 to 30 wt % of an olefin based polymer based on the total weight of the polymer composition. The vinyl aromatic copolymer is represented by a formula A1-B-A2, wherein block A1 and block A2 are the same or different vinyl aromatic blocks, block A1 or block A2 having 3,800 to 4,800 of a peak molecular weight, and block B is a hydrogenated conjugated diene block. A vinyl structure content of a conjugated diene monomer content in the vinyl aromatic based copolymer is from 32 wt % to 50 wt %; and a melt flow index (MFI) of the vinyl aromatic based copolymer is 20 g/10 min˜60 g/10 min (230° C., 2.16 kg). The present invention also provides the fibers or the non-woven fabrics made from the polymer composition.

Abstract: The present invention provides a polymer composition for pressure sensitive adhesives or films thereof. The polymer composition comprises 20-40 parts by weight of a tackifier; and 60-80 parts by weight of a polymer, wherein the polymer and the tackifier are 100 parts by weight. The polymer comprises at least a first vinyl aromatic based copolymer formed by polymerization of vinyl aromatic monomer and conjugated diene monomer, wherein a vinyl aromatic monomer content of the first vinyl aromatic based copolymer is 16 wt %˜28 wt %, a vinyl structure content of a conjugated diene monomer content in the first vinyl aromatic based copolymer is 32 wt %˜50 wt %; and a melt flow index (MFI) of the first vinyl aromatic based copolymer is 20 g/10 min˜60 g/10 min (230° C., 2.16 kg). The present invention also provides the pressure sensitive adhesives or films made from the polymer composition.

Abstract: The present invention provides a polymer composition for fibers or non-woven fabrics, comprising a vinyl aromatic based copolymer and 0 to 30 wt % of an olefin based polymer based on the total weight of the polymer composition. The vinyl aromatic copolymer is represented by a formula A1-B-A2, wherein block A1 and block A2 are the same or different vinyl aromatic blocks, block A1 or block A2 having 3,800 to 4,800 of a peak molecular weight, and block B is a hydrogenated conjugated diene block. A vinyl structure content of a conjugated diene monomer content in the vinyl aromatic based copolymer is from 32 wt % to 50 wt %; and a melt flow index (MFI) of the vinyl aromatic based copolymer is 20 g/10 min˜60 g/10 min (230° C., 2.16 kg). The present invention also provides the fibers or the non-woven fabrics made from the polymer composition.

Abstract: A thermoplastic elastomer composition for crosslinked foam and the manufacturing method thereof are provided. The thermoplastic elastomer composition comprising (A) an ethylene-based copolymer; (B) a first copolymer; (C) a second copolymer, wherein the component (B) and (C) are copolymers comprising a vinyl aromatic monomer and a conjugated diene monomer, the first copolymer having a conjugated diene hydrogenation rate of at least 80% and the second copolymer having a conjugated diene hydrogenation rate of no more than 10%; (D) an organic peroxide; and (E) a foaming agent, wherein a mass ratio (A/(B+C)) of the component (A) to a combination of the component (B) and the component (C) is 95/5 to 5/95; and a mass ratio (B/C) of the component (B) to the component (C) is 9/1 to 1/9. A crosslinked foam made from the composition and the manufacturing method thereof are also provided.

Abstract: A thermoplastic elastomer composition for crosslinked foam and the manufacturing method thereof are provided. The thermoplastic elastomer composition comprising (A) an ethylene-based copolymer; (B) a first copolymer; (C) a second copolymer, wherein the component (B) and (C) are copolymers comprising a vinyl aromatic monomer and a conjugated diene monomer, the first copolymer having a conjugated diene hydrogenation rate of at least 80% and the second copolymer having a conjugated diene hydrogenation rate of no more than 10%; (D) an organic peroxide; and (E) a foaming agent, wherein a mass ratio (A/(B+C)) of the component (A) to a combination of the component (B) and the component (C) is 95/5 to 5/95; and a mass ratio (B/C) of the component (B) to the component (C) is 9/1 to 1/9. A crosslinked foam made from the composition and the manufacturing method thereof are also provided.

Abstract: A back contact solar cell includes a solar cell substrate, an intrinsic layer, a second conductive type semiconductor layer and an electrode layer. The solar cell substrate includes a substrate body doped with a first conductive type semiconductor and a plurality of first conductive type semiconductor doped regions. The first conductive type semiconductor doped region is formed on a back side of the substrate body. The intrinsic layer is formed on the back side, and includes a plurality of first openings to expose the first conductive type semiconductor doped regions. The second conductive type semiconductor layer is deposited on the intrinsic layer, and includes a plurality of second openings correspond the first openings. The electrode layer includes a plurality of first electrode regions and a second electrode region. The first electrode regions are disposed on the first conductive type semiconductor doped regions.

Abstract: A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.

Abstract: A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.

Abstract: An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.

Abstract: A thin film chalcogenide photovoltaic device and method for forming the same are disclosed. The thin film chalcogenide photovoltaic device includes a first electrode, a second electrode and an active layer disposed between the first electrode and the second electrode, wherein the active layer includes a p-type chalcogenide semiconductor layer, an n-type inorganic semiconductor layer, and an n-type carbon-containing material layer formed between the p-type chalcogenide semiconductor layer and the n-type inorganic semiconductor layer.

Abstract: A composition and a polymer are provided. The composition includes the polymer and a melamine derivative. The polymer has a formula of R is hydrogen, halide, alkyl group, alkoxyl group, haloalkyl group or nitro group. n is 1-5 of integer. x+y+z=1, x>0, y?0, z?0. The melamine derivative includes R1 is hydrogen, CqH2q+1, or m and q independently is 1-10 of integer. R2, R3 and R4 independently is hydrogen, halide, or C1-C54 alkyl group.

Abstract: A photovoltaic device including a CZTS absorber layer and method for manufacturing the same are disclosed. The photovoltaic device includes a substrate, a bottom electrode, an absorber layer formed on the bottom electrode, a buffer layer formed on the absorber layer and a top electrode layer formed on the buffer layer. The absorber layer includes a first region adjacent to the bottom electrode and a second region adjacent to the first region. Both of the first region and the second region include a formula of Cua(Zn1-bSnb)(Se1-cSc)2, wherein 0<a<1, 0<b<1, 0?c?1 and a Zn/Sn ratio of the first region is higher than that of the second region.

Abstract: An ink composition includes a solvent system, a plurality of metal chalcogenide nanoparticles, at least one of metal ions and metal complex ions and a sodium source. The at least one of the metal ions and the metal complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent system. The sodium source is dispersed in the solvent system and/or is included in at least one of the metal chalcogenide nanoparticle, the metal ions and the metal complex ions. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III, group IV elements of periodic table, and sodium and include all metal elements of a chalcogenide semiconductor material.

Abstract: A method for forming a chalcogenide semiconductor film and a photovoltaic device using the chalcogenide semiconductor film are disclosed. The method includes steps of coating a precursor solution to form a layer on a substrate and annealing the layer to form the chalcogenide semiconductor film. The precursor solution includes a solvent, metal chalcogenide nanoparticles and at least one of metal ions and metal complex ions which are distributed on surfaces of the metal chalcogenide nanoparticles. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.

Abstract: An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.

Abstract: A composition and a polymer are provided. The composition includes the polymer and a melamine derivative. The polymer has a formula of R is hydrogen, halide, alkyl group, alkoxyl group, haloalkyl group or nitro group. n is 1-5 of integer. x+y+z=1, x>0, y?0, z?0. The melamine derivative includes R1 is hydrogen, CqH2q+1, or m and q independently is 1-10 of integer. R2, R3 and R4 independently is hydrogen, halide, or C1-C54 alkyl group.

Abstract: The all-directional fall sensor of the present invention includes a first casing defining a first interior space filled with a liquid and a floater buoyed by the liquid inside the first casing. The floater includes an indicator having indicative materials therein. The indicator includes a body defining a chamber, which is divided into at least a first portion and a second portion with a first sealing member located therebetween. The indicative materials are contained in the second portion of the chamber and are sealed therein with the first sealing member. When the all-directional fall sensor is applied with a force, the first sealing member would be dislocated and thus the indicative materials are dispersed within the chamber.

Abstract: A mononuclear star-branched polymer dielectric material having a repeat unit of the formula (I): A-Bn??(I) wherein, A represents a multifunctional center having a functionality and a functional group with “n” arms; n is an integer greater than 2. B represents a hydrolyzed or partially hydrolyzed compound of the formula (II): wherein, X represents H or CH3; R represents H, alkyl or is selected from a group consisting of acetoxyl, t-butyl, t-butyldimethyl silyl, acid labile groups and acid stable groups; “a” is an integer from 1 to 5; y and z are molar ratio and are the numbers satisfying y+z=1, 0<y?1 and 0?z<1.

Abstract: A method for fabricating an electronic device is provided. The method for fabricating the electrical device comprises providing a substrate. A patterned first self-assembled monolayer (SAM) and an adjacent patterned second SAM are formed on the substrate, wherein the patterned first SAM has a higher affinity then that of the patterned second SAM. A conductive, semiconductor or insulating material is dissolved or suspended in a solvent to form a solution. The solution is coated on the substrate. The solvent in the solution is removed to selectively form a patterned conductive, semiconductor or insulating layer on the patterned first SAM.