Patents by Inventor FENG YUAN HSU

FENG YUAN HSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12235573
    Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer including molybdenum layers and silicon layers over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and performing a treatment to form a border region including molybdenum silicide in the reflective layer.
    Type: Grant
    Filed: July 30, 2023
    Date of Patent: February 25, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Feng Yuan Hsu, Tran-Hui Shen, Ching-Hsiang Hsu
  • Patent number: 12215703
    Abstract: The present disclosure relates to air assemblies having an inflation, a deflation, and a closed state for use with inflatable products, such as air mattresses. Specifically, the present disclosure relates to air assemblies where the configuration of the air assembly can be changed manually by a user by operating a directional control valve to inflate, deflate, or close the inflatable product. The directional control valve may also activate a pump in the inflation and deflation states and deactivate the pump in the closed state.
    Type: Grant
    Filed: October 25, 2023
    Date of Patent: February 4, 2025
    Assignee: Intex Marketing Ltd.
    Inventors: Zhi Xiong Huang, Feng Chen, Huai Tian Wang, Yaw Yuan Hsu
  • Patent number: 12212926
    Abstract: A MEMS structure is provided. The MEMS structure includes a substrate and a backplate, the substrate has an opening portion, and the backplate is disposed on one side of the substrate and has acoustic holes. The MEMS structure also includes a diaphragm disposed between the substrate and the backplate, and the diaphragm extends across the opening portion of the substrate and includes outer ventilation holes and inner ventilation holes arranged in a concentric manner. The outer ventilation holes and the inner ventilation holes are relatively arranged in a ring shape and surround the center of the diaphragm. The MEMS structure further includes a pillar disposed between the backplate and the diaphragm. The pillar prevents the diaphragm from being electrically connected to the backplate.
    Type: Grant
    Filed: October 28, 2022
    Date of Patent: January 28, 2025
    Assignee: FORTEMEDIA, INC.
    Inventors: Wen-Shan Lin, Chun-Kai Mao, Chih-Yuan Chen, Jien-Ming Chen, Feng-Chia Hsu, Nai-Hao Kuo
  • Patent number: 12207052
    Abstract: A MEMS structure is provided. The MEMS structure includes a substrate having an opening portion and a backplate disposed on one side of the substrate. The MEMS structure also includes a diaphragm disposed between the substrate and the backplate. The opening portion of the substrate is under the diaphragm, and an air gap is formed between the diaphragm and the backplate. The MEMS structure further includes a pillar structure connected with the backplate and the diaphragm and a protection post structure extending from the backplate into the air gap. From a top view of the backplate, the protection post structure surrounds the pillar structure.
    Type: Grant
    Filed: October 3, 2022
    Date of Patent: January 21, 2025
    Assignee: FORTEMEDIA, INC.
    Inventors: Chun-Kai Mao, Chih-Yuan Chen, Feng-Chia Hsu, Jien-Ming Chen, Wen-Shan Lin, Nai-Hao Kuo
  • Patent number: 12066760
    Abstract: A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The paramagnetic part includes a plurality of fractions disposed on a plurality of protrusion structures. In some embodiments, the fractions are irregularly arranged. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.
    Type: Grant
    Filed: March 25, 2022
    Date of Patent: August 20, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ching-Hsiang Hsu, James Jeng-Jyi Hwang, Feng Yuan Hsu
  • Publication number: 20230384662
    Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer including molybdenum layers and silicon layers over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and performing a treatment to form a border region including molybdenum silicide in the reflective layer.
    Type: Application
    Filed: July 30, 2023
    Publication date: November 30, 2023
    Inventors: FENG YUAN HSU, TRAN-HUI SHEN, CHING-HSIANG HSU
  • Patent number: 11782338
    Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The borderer region has a reflectivity less than about 0.1%.
    Type: Grant
    Filed: April 15, 2022
    Date of Patent: October 10, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Feng Yuan Hsu, Tran-Hui Shen, Ching-Hsiang Hsu
  • Publication number: 20220236637
    Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The borderer region has a reflectivity less than about 0.1%.
    Type: Application
    Filed: April 15, 2022
    Publication date: July 28, 2022
    Inventors: FENG YUAN HSU, TRAN-HUI SHEN, CHING-HSIANG HSU
  • Publication number: 20220214620
    Abstract: A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The paramagnetic part includes a plurality of fractions disposed on a plurality of protrusion structures. In some embodiments, the fractions are irregularly arranged. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.
    Type: Application
    Filed: March 25, 2022
    Publication date: July 7, 2022
    Inventors: CHING-HSIANG HSU, JAMES JENG-JYI HWANG, FENG YUAN HSU
  • Patent number: 11307489
    Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The laser beam includes a pulse duration of less than about ten picoseconds.
    Type: Grant
    Filed: August 15, 2019
    Date of Patent: April 19, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Feng Yuan Hsu, Tran-Hui Shen, Ching-Hsiang Hsu
  • Patent number: 11287745
    Abstract: A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The paramagnetic part includes a plurality of fractions disposed on a plurality of protrusion structures. In some embodiments, the protrusion structures are irregularly arranged. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.
    Type: Grant
    Filed: December 14, 2020
    Date of Patent: March 29, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ching-Hsiang Hsu, James Jeng-Jyi Hwang, Feng Yuan Hsu
  • Patent number: 11260495
    Abstract: A polishing pad for CMP is provided. The polishing pad includes a layer of material having a surface, a plurality of grooves indented into the surface in the layer of material, and a fluorescent indicator in the layer of material. Each of the plurality of grooves has a first depth, the fluorescent indicator has a second depth, and the second depth is equal to or less than the first depth.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: March 1, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ji James Cui, Feng Yuan Hsu
  • Patent number: 11255658
    Abstract: An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.
    Type: Grant
    Filed: August 25, 2020
    Date of Patent: February 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Feng Yuan Hsu, Chi-Ming Yang, Ching-Hsiang Hsu, Chyi Shyuan Chern
  • Patent number: 11199767
    Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: December 14, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chung-Chieh Lee, Feng Yuan Hsu, Chyi Shyuan Chern, Chi-Ming Yang, Tsiao-Chen Wu, Chun-Lin Chang
  • Publication number: 20210096469
    Abstract: A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The paramagnetic part includes a plurality of fractions disposed on a plurality of protrusion structures. In some embodiments, the protrusion structures are irregularly arranged. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.
    Type: Application
    Filed: December 14, 2020
    Publication date: April 1, 2021
    Inventors: CHING-HSIANG HSU, JAMES JENG-JYI HWANG, FENG YUAN HSU
  • Patent number: 10880982
    Abstract: A light generation system is provided. The light generation system includes a vaporization device, a laser device and a lens structure. The vaporization device is configured to vaporize a metal-nonmetal compound to generate a metal-nonmetal precursor gas. The laser device is configured to provide laser light, and irradiate the metal-nonmetal precursor gas released from the vaporization device with the laser light to emit a light signal. The lens structure is configured to direct the light signal toward a photomask used in a lithography process.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ching-Hsiang Hsu, Feng Yuan Hsu, Hsu-Kai Chang, Chi-Ming Yang
  • Patent number: 10866519
    Abstract: A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The magnetic substrate has a magnetic field, and the paramagnetic part has an induced magnetic field in a direction of the magnetic field of the magnetic substrate. The paramagnetic part includes a rough surface defined by a plurality of protrusion structures of the paramagnetic part. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.
    Type: Grant
    Filed: October 1, 2019
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ching-Hsiang Hsu, James Jeng-Jyi Hwang, Feng Yuan Hsu
  • Publication number: 20200386539
    Abstract: An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.
    Type: Application
    Filed: August 25, 2020
    Publication date: December 10, 2020
    Inventors: FENG YUAN HSU, CHI-MING YANG, CHING-HSIANG HSU, CHYI SHYUAN CHERN
  • Patent number: 10760896
    Abstract: An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: September 1, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Feng Yuan Hsu, Chi-Ming Yang, Ching-Hsiang Hsu, Chyi Shyuan Chern
  • Publication number: 20200117076
    Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.
    Type: Application
    Filed: December 13, 2019
    Publication date: April 16, 2020
    Inventors: CHUNG-CHIEH LEE, FENG YUAN HSU, CHYI SHYUAN CHERN, CHI-MING YANG, TSIAO-CHEN WU, CHUN-LIN CHANG