Abstract: The present disclosure provides a polyoxomolybdate material and a preparation method and use thereof, a solar cell, and an organic light-emitting diode (OLED), and belongs to the technical field of optoelectronic devices. An organic solar cell (OSC) with the polyoxomolybdate material of the present disclosure as an electrode interface material has an open-circuit voltage of 0.810 V to 0.860 V, a short-circuit current density of 24.50 mA/cm2 to 26.10 mA/cm2, a fill factor of 68.7% to 78.8%, and a power conversion efficiency (PCE) of 14.21% to 17.42%. An OLED with the polyoxomolybdate material of the present disclosure has a turn-on voltage of 2.3 V to 3.5 V, a maximum brightness of 14,330 cd/m2 to 43,430 cd/m2, a current efficiency of 7.00 cd/A to 15.00 cd/A, and a power efficiency of 3.50 lm/W to 13.00 lm/W, and exhibits prominent LED performance.

Abstract: The present invention relates to a doped organic semiconductor material comprising an organic matrix material which is doped with at least one heteromonocyclic and/or heteropolycyclic compound, the compound having at least one nitrogen atom with a free electron pair.

Abstract: The present invention relates to a doped organic semiconductor material comprising an organic matrix material which is doped with at least one heteromonocyclic and/or heteropolycyclic compound, the compound having at least one nitrogen atom with a free electron pair.

Abstract: The present invention relates to a process for the preparation of doped organic semiconductor materials having an increased charge carrier density and effective charge carrier mobility, by doping with a dopant, a process in which after mixing the dopant into the organic semiconductor material, hydrogen, carbon monoxide, nitrogen or hydroxyl radicals are split off and at least one electron is transferred to the semiconductor material or from the semiconductor material. The process is distinguished by the fact that an uncharged organic compound is used as dopant. Doped organic semiconductor materials are obtainable by one of the processes. The semiconductor materials are distinguished by the fact that the doped layer contains cations of at least one organic compound, the uncharged form of the organic compound being unstable in air.

Abstract: The present invention relates to a process for the preparation of doped organic semiconductor materials having an increased charge carrier density and effective charge carrier mobility, by doping with a dopant, a process in which after mixing the dopant into the organic semiconductor material, hydrogen, carbon monoxide, nitrogen or hydroxyl radicals are split off and at least one electron is transferred to the semiconductor material or from the semiconductor material. The process is distinguished by the fact that an uncharged organic compound is used as dopant. Doped organic semiconductor materials are obtainable by one of the processes. The semiconductor materials are distinguished by the fact that the doped layer contains cations of at least one organic compound, the uncharged form of the organic compound being unstable in air.