Patents by Inventor Fengji Yeh
Fengji Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10875144Abstract: The present invention provides methods of CMP polishing a metal surface, such as a copper or tungsten containing metal surface in a semiconductor wafer, the methods comprising CMP polishing the substrate with a CMP polishing pad that has a top polishing surface in a polishing layer which is the reaction product of an isocyanate terminated urethane prepolymer and a curative component comprising a polyol curative having a number average molecular weight of 6000 to 15,000, and having an average of 5 to 7 hydroxyl groups per molecule and a polyfunctional aromatic amine curative, wherein the polishing layer would if unfilled have a water uptake of 4 to 8 wt. % after one week of soaking in deionized (DI) water at room temperature. The methods form coplanar metal and dielectric or oxide layer surfaces with low defectivity and a minimized degree of dishing.Type: GrantFiled: August 8, 2018Date of Patent: December 29, 2020Assignee: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, IInventors: Bainian Qian, Fengji Yeh, Te-Chun Wang, Sheng-Huan Tseng, Kevin Wen-Huan Tung, Marty W. DeGroot
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Publication number: 20180361531Abstract: The present invention provides methods of CMP polishing a metal surface, such as a copper or tungsten containing metal surface in a semiconductor wafer, the methods comprising CMP polishing the substrate with a CMP polishing pad that has a top polishing surface in a polishing layer which is the reaction product of an isocyanate terminated urethane prepolymer and a curative component comprising a polyol curative having a number average molecular weight of 6000 to 15,000, and having an average of 5 to 7 hydroxyl groups per molecule and a polyfunctional aromatic amine curative, wherein the polishing layer would if unfilled have a water to uptake of 4 to 8 wt. % after one week of soaking in deionized (DI) water at room temperature. The methods form coplanar metal and dielectric or oxide layer surfaces with low defectivity and a minimized degree of dishing.Type: ApplicationFiled: August 8, 2018Publication date: December 20, 2018Inventors: Bainian Qian, Fengji Yeh, Te-Chun Wang, Sheng-Huan Tseng, Kevin Wen-Huan Tung, Marty W. DeGroot
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Patent number: 10144115Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 5 to 1,000 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.Type: GrantFiled: May 24, 2016Date of Patent: December 4, 2018Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: David Michael Veneziale, Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh, Yuhua Tong, Jeffrey B. Miller, Diego Lugo, George C. Jacob, Marty W. DeGroot, Andrew Wank, Fengji Yeh
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Patent number: 10105825Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 10 to 300 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.Type: GrantFiled: June 26, 2015Date of Patent: October 23, 2018Assignees: Rohm and Haas Electronics Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: David Michael Veneziale, Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh, Yuhua Tong, Jeffrey B. Miller, Diego Lugo, George C. Jacob, Marty W. DeGroot, Andrew Wank, Fengji Yeh
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Publication number: 20180281149Abstract: The present invention provides methods of CMP polishing a metal surface, such as a copper or tungsten containing metal surface in a semiconductor wafer, the methods comprising CMP polishing the substrate with a CMP polishing pad that has a top polishing surface in a polishing layer which is the reaction product of an isocyanate terminated urethane prepolymer and a curative component comprising a polyol curative having a number average molecular weight of 6000 to 15,000, and having an average of 5 to 7 hydroxyl groups per molecule and a polyfunctional aromatic amine curative, wherein the polishing layer would if unfilled have a water uptake of 4 to 8 wt. % after one week of soaking in deionized (DI) water at room temperature. The methods form coplanar metal and dielectric or oxide layer surfaces with low defectivity and a minimized degree of dishing.Type: ApplicationFiled: March 31, 2017Publication date: October 4, 2018Inventors: Bainian Qian, Fengji Yeh, Te-Chun Wang, Sheng-Huan Tseng, Kevin Wen-Huan Tung, Marty W. DeGroot
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Patent number: 9776300Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ?10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.Type: GrantFiled: May 24, 2016Date of Patent: October 3, 2017Assignees: Rohm and Haas Electronic Materials CMP Holdings Inc., Dow Global Technologies LLCInventors: Bainian Qian, Julia Kozhukh, Teresa Brugarolas Brufau, David Michael Veneziale, Yuhua Tong, Diego Lugo, Jeffrey B. Miller, George C. Jacob, Marty W. DeGroot, Tony Quan Tran, Marc R. Stack, Andrew Wank, Fengji Yeh
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Patent number: 9586305Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ?10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.Type: GrantFiled: June 26, 2015Date of Patent: March 7, 2017Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Bainian Qian, Julia Kozhukh, Teresa Brugarolas Brufau, David Michael Veneziale, Yuhua Tong, Diego Lugo, Jeffrey B. Miller, George C. Jacob, Marty W. DeGroot, Tony Quan Tran, Marc R. Stack, Andrew Wank, Fengji Yeh
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Publication number: 20160379840Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of >10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.Type: ApplicationFiled: May 24, 2016Publication date: December 29, 2016Inventors: Bainian Qian, Julia Kozhukh, Teresa Brugarolas Brufau, David Michael Veneziale, Yuhua Tong, Diego Lugo, Jeffrey B. Miller, George C. Jacob, Marty W. DeGroot, Tony Quan Tran, Marc R. Stack, Andrew Wank, Fengji Yeh
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Publication number: 20160375543Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ?10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.Type: ApplicationFiled: June 26, 2015Publication date: December 29, 2016Inventors: Bainian Qian, Julia Kozhukh, Teresa Brugarolas Brufau, David Michael Veneziale, Yuhua Tong, Diego Lugo, Jeffrey B. Miller, George C. Jacob, Marty W. DeGroot, Tony Quan Tran, Marc R. Stack, Andrew Wank, Fengji Yeh
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Publication number: 20160375553Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 10 to 300 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.Type: ApplicationFiled: June 26, 2015Publication date: December 29, 2016Inventors: David Michael Veneziale, Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh, Yuhua Tong, Jeffrey B. Miller, Diego Lugo, George C. Jacob, Marty W. DeGroot, Andrew Wank, Fengji Yeh
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Publication number: 20160375555Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 5 to 1,000 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.Type: ApplicationFiled: May 24, 2016Publication date: December 29, 2016Inventors: David Michael Veneziale, Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh, Yuhua Tong, Jeffrey B. Miller, Diego Lugo, George C. Jacob, Marty W. DeGroot, Andrew Wank, Fengji Yeh
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Patent number: 9259820Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and an endpoint detection window incorporated into the chemical mechanical polishing pad, wherein the endpoint detection window is a plug in place window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: a window prepolymer, and, a window curative system, comprising: at least 5 wt % of a window difunctional curative; at least 5 wt % of a window amine initiated polyol curative; and, 25 to 90 wt % of a window high molecular weight polyol curative.Type: GrantFiled: March 28, 2014Date of Patent: February 16, 2016Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Bainian Qian, Marty W. DeGroot, James Murnane, Angus Repper, Michelle Jensen, Jeffrey J. Hendron, John G. Nowland, David B. James, Fengji Yeh
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Patent number: 9238296Abstract: A multilayer chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.Type: GrantFiled: May 31, 2013Date of Patent: January 19, 2016Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: James Murnane, Bainian Qian, John G. Nowland, Michelle K. Jensen, Jeffrey James Hendron, Marty W. DeGroot, David B. James, Fengji Yeh
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Patent number: 9238295Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer; a plug in place endpoint detection window block; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.Type: GrantFiled: May 31, 2013Date of Patent: January 19, 2016Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Bainian Qian, Michelle K. Jensen, Marty W. DeGroot, Angus Repper, James Murnane, Jeffrey James Hendron, John G. Nowland, David B. James, Fengji Yeh
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Patent number: 9233451Abstract: A chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.Type: GrantFiled: May 31, 2013Date of Patent: January 12, 2016Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: James Murnane, Bainian Qian, John G. Nowland, Michelle K. Jensen, Jeffrey James Hendron, Marty W. DeGroot, David B. James, Fengji Yeh
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Publication number: 20150273652Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and an endpoint detection window incorporated into the chemical mechanical polishing pad, wherein the endpoint detection window is a plug in place window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: a window prepolymer, and, a window curative system, comprising: at least 5 wt % of a window difunctional curative; at least 5 wt % of a window amine initiated polyol curative; and, 25 to 90 wt % of a window high molecular weight polyol curative.Type: ApplicationFiled: March 28, 2014Publication date: October 1, 2015Inventors: Bainian Qian, Marty W. DeGroot, James Murnane, Angus Repper, Michelle Jensen, Jeffrey J. Hendron, John G. Nowland, David B. James, Fengji Yeh
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Patent number: 9144880Abstract: A chemical mechanical polishing pad for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate is provided containing a polishing layer, wherein the polishing layer comprises the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.Type: GrantFiled: November 1, 2012Date of Patent: September 29, 2015Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Bainian Qian, David B. James, James Murnane, Fengji Yeh, Marty W. DeGroot
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Patent number: 9102034Abstract: A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.Type: GrantFiled: August 30, 2013Date of Patent: August 11, 2015Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Michelle Jensen, Bainian Qian, Fengji Yeh, Marty W. DeGroot, Mohammad T. Islam, Matthew Richard Van Hanehem, Darrell String, James Murnane, Jeffrey James Hendron, John G. Nowland
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Patent number: 9064806Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and a window incorporated into the polishing layer; wherein the polishing layer comprises a reaction product of ingredients, including: a polishing layer prepolymer and a polishing layer curative system; wherein the polishing layer curative system includes a polishing layer amine initiated polyol curative, a polishing layer high molecular weight polyol curative and a polishing layer difunctional curative; and, wherein the window comprises a reaction product of ingredients, including: a window prepolymer and a window curative system; wherein the window curative system includes a window difunctional curative, a window amine initiated polyol curative and a window high molecular weight polyol curative; and, wherein the polishing layer exhibits a density of ?0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr.Type: GrantFiled: March 28, 2014Date of Patent: June 23, 2015Assignees: Rohm and Haas Electronics Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Bainian Qian, Marty W. DeGroot, Michelle Jensen, James Murnane, Jeffrey J. Hendron, John G. Nowland, David B. James, Fengji Yeh
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Patent number: 8980749Abstract: A method for polishing a silicon wafer is provided, comprising: providing a silicon wafer; providing a polishing pad having a polishing layer which is the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.4 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the silicon wafer; and, creating dynamic contact between the polishing surface and the silicon wafer.Type: GrantFiled: October 24, 2013Date of Patent: March 17, 2015Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Nitta Haas IncorporatedInventors: Yasuyuki Itai, Bainian Qian, Hiroyuki Nakano, David B. James, Naoko Kawai, Katsumasa Kawabata, Koichi Yoshida, Kazutaka Miyamoto, James Murnane, Fengji Yeh, Marty W. DeGroot