Abstract: An LED chip includes: an epitaxial stack, including a recess and a mesa; an isolating layer, covering the epitaxial stack and exposing a portion of a surface of the recess to form a recess exposed portion. The isolating layer includes at least one through hole along a surface of the mesa. A current spreading layer is stacked on a side surface of the isolating layer, where the side surface is located away from the mesa, and the current spreading layer is embedded in the at least one through hole. A reflective layer covers the current spreading layer and the isolating layer, where the reflective layer exposes the recess exposed portion and includes an electrode hole, the electrode hole exposes a portion of the current spreading layer.

Abstract: The present disclosure provides a micro light-emitting element, method for manufacturing a micro light-emitting element, and a light-emitting device. The micro light-emitting element includes a DBR structure layer, including a DBR adhesive layer, a DBR reflective layer, and a DBR sacrificial layer, where the DBR adhesive layer, the DBR reflective layer, and the DBR sacrificial layer are sequentially stacked. Subsequent structural coverage of a DBR reflective layer is improved by means of the DBR adhesion layer. Density of film layers of the DBR sacrificial layer, the DBR reflective layer, and the DBR adhesive layer are sequentially increased, so that etching rates of the DBR sacrificial layer, the DBR reflective layer, and the DBR adhesive layer are sequentially decreased during etching, thereby forming an inverted trapezoidal through hole which comprises an inclined side wall by an etching process.