Abstract: The present disclosure discloses a vapor deposition apparatus, including a cavity, a first electrode, a second electrode and a gas feed tube. The cavity is provided with a gas inlet and a gas outlet thereon. The first electrode and the second electrode are disposed in the cavity. The first electrode is connected to a high frequency alternating power and the second electrode is grounded. The first electrode is disposed at a side where the gas inlet is located, and the second electrode is disposed to be parallel with and opposite to the first electrode. The first electrode includes a first opening facing the gas inlet and a second opening opposite to the gas inlet and connected with the first opening. The gas feed tube is introduced from the gas inlet and connected to the first opening.

Abstract: A plasma enhanced chemical vapor deposition (PECVD) device includes a deposition box, a first electrode, and a second electrode, where the first electrode and the second electrode are arranged in the deposition box. A process chamber is arranged in the deposition box, a gas line and a pump port are respectively arranged along a first side wall and a second side wall of the deposition box, and a valve is arranged along a third side wall of the deposition box. The first electrode is arranged in an inside of the process chamber, and is connected to a radio frequency (RF) power source. A first end of the first electrode corresponds to the valve and is adjacent to the pump port.

Abstract: The present invention provides methods for manufacturing a passivation layer and a thin film transistor (TFT) array substrate. The method for manufacturing the passivation layer comprises the following steps: placing a substrate in a vacuum process chamber; providing an ammonia gas and a nitrogen gas into the vacuum process chamber; forming plasma and evaporating water vapor; and forming the passivation layer on the substrate. The method for manufacturing the passivation layer can be applicable to the method for manufacturing the TFT array substrate. The present invention can enhance the quality of the passivation layer.

Abstract: The present invention provides methods for manufacturing a passivation layer and a thin film transistor (TFT) array substrate. The method for manufacturing the passivation layer comprises the following steps: placing a substrate in a vacuum process chamber; providing an ammonia gas and a nitrogen gas into the vacuum process chamber; forming plasma and evaporating water vapor; and forming the passivation layer on the substrate. The method for manufacturing the passivation layer can be applicable to the method for manufacturing the TFT array substrate. The present invention can enhance the quality of the passivation layer.