Abstract: A semiconductor device is disclosed, comprising: a substrate; a semiconductor layer disposed on the substrate; a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode disposed between the source electrode and the drain electrode; a dielectric layer disposed on at least a part of the surface of the semiconductor layer which is between the gate electrode and the drain electrode, the dielectric layer having at least a recess therein; and a source field plate disposed on the dielectric layer and at least partially covering the recess, the source field plate being electrically connected to the source electrode through at least a conductive path, wherein a part of the source field plate above the gate electrode has a varying distance from an upper surface of the semiconductor layer. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: A semiconductor device includes: a substrate having a rear side on which a grounded electrode is disposed; a semiconductor layer disposed on a front side of the substrate and including an active region and an inactive region; a plurality of source electrodes disposed in the active region; a drain electrode including a plurality of first portions disposed in the active region and a second portion disposed in the inactive region; a gate electrode including a plurality of first portions disposed in the active region and a second portion disposed in the inactive region; and a plurality of source electrode pads having the same number as the plurality of source electrodes and disposed in the inactive region and each being connected to a corresponding source electrode directly. A plurality of through holes electrically connecting the plurality of source electrodes and the grounded electrode respectively are disposed in the plurality of source electrode pads.

Abstract: A semiconductor device is disclosed, comprising: a substrate; a semiconductor layer disposed on the substrate; a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode disposed between the source electrode and the drain electrode; a dielectric layer disposed on at least a part of the surface of the semiconductor layer which is between the gate electrode and the drain electrode, the dielectric layer having at least a recess therein; and a source field plate disposed on the dielectric layer and at least partially covering the recess, the source field plate being electrically connected to the source electrode through at least a conductive path, wherein a part of the source field plate above the gate electrode has a varying distance from an upper surface of the semiconductor layer. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: A semiconductor device is disclosed, comprising: a substrate; a semiconductor layer disposed on the substrate; a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode disposed between the source electrode and the drain electrode; a dielectric layer disposed on at least a part of the surface of the semiconductor layer which is between the gate electrode and the drain electrode, the dielectric layer having at least a recess therein; and a source field plate disposed on the dielectric layer and at least partially covering the recess, the source field plate being electrically connected to the source electrode through at least a conductive path. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: A semiconductor device is disclosed, comprising: a substrate; a semiconductor layer disposed on the substrate; a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode disposed between the source electrode and the drain electrode; a dielectric layer disposed on at least a part of the surface of the semiconductor layer which is between the gate electrode and the drain electrode, the dielectric layer having at least a recess therein; and a source field plate disposed on the dielectric layer and at least partially covering the recess, the source field plate being electrically connected to the source electrode through at least a conductive path. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: A semiconductor device includes: a substrate having a rear side on which a grounded electrode is disposed; a semiconductor layer disposed on a front side of the substrate and including an active region and an inactive region; a plurality of source electrodes disposed in the active region; a drain electrode including a plurality of first portions disposed in the active region and a second portion disposed in the inactive region; a gate electrode including a plurality of first portions disposed in the active region and a second portion disposed in the inactive region; and a plurality of source electrode pads having the same number as the plurality of source electrodes and disposed in the inactive region and each being connected to a corresponding source electrode directly. A plurality of through holes electrically connecting the plurality of source electrodes and the grounded electrode respectively are disposed in the plurality of source electrode pads.