Abstract: The present disclosure describes a method for memory cell placement. The method can include placing a memory cell region in a layout area and placing a well pick-up region and a first power supply routing region along a first side of the memory cell region. The method also includes placing a second power supply routing region and a bitline jumper routing region along a second side of the memory cell region, where the second side is on an opposite side to that of the first side. The method further includes placing a device region along the second side of the memory cell region, where the bitline jumper routing region is between the second power supply routing region and the device region.

Abstract: Provided is a semiconductor device includes a gate electrode, a gate dielectric layer, a channel layer, an insulating layer, a first source/drain electrode and a second source/drain electrode, a second dielectric layer, and a stop segment. The gate electrode is located within a first dielectric layer that overlies a substrate. The gate dielectric layer is located over the gate electrode. The channel layer is located on the gate dielectric layer. The insulating layer is located over the channel layer. The first source/drain electrode and the second source/drain electrode are located in the insulating layer, and connected to the channel layer. The second dielectric layer is beside one of the first source/drain electrode and the second source/drain electrode. The stop segment is embedded in the second dielectric layer.

Abstract: A memory device includes a multi-layer stack, a channel layer, a memory material layer and at least three conductive pillars. The multi-layer stack is disposed on a substrate and includes a plurality of conductive layers and a plurality of dielectric layers stacked alternately. The channel layer and memory material layer penetrate through the plurality of conductive layers and the plurality of dielectric layers. The at least three conductive pillars are surrounded by the channel layer and the memory material layer, wherein the at least three conductive pillars are electrically connected to conductive layers respectively. The at least three conductive pillars includes a first, a second and a third conductive pillars disposed between the first conductive pillar and the second conductive pillar. A third width of the third conductive pillar is smaller than a first width of the first conductive pillar and a second width of the second conductive pillar.

Abstract: A surrounding member with covering structure, an electronic device having the surrounding member, and a method of assembling a surrounding member are disclosed. A case of the electronic device includes a through hole. The surrounding member includes a first fastener, a second fastener, and a supporter. The first fastener passes through the through hole and is attached to the case. The second fastener and the supporter cover a lateral wall of the case. Therefore, the surrounding member can be assembled to the case even without using an adhesive and the surrounding member will not detach from the case easily. Moreover, because the surrounding member is attached to the case by passing through the though hole and cover the lateral wall of the case, the surrounding member is also adopt for an electronic device with narrow frame.

Abstract: A surrounding member with covering structure, an electronic device having the surrounding member, and a method of assembling a surrounding member are disclosed. A case of the electronic device includes a through hole. The surrounding member includes a first fastener, a second fastener, and a supporter. The first fastener passes through the through hole and is attached to the case. The second fastener and the supporter cover a lateral wall of the case. Therefore, the surrounding member can be assembled to the case even without using an adhesive and the surrounding member will not detach from the case easily. Moreover, because the surrounding member is attached to the case by passing through the though hole and cover the lateral wall of the case, the surrounding member is also adopt for an electronic device with narrow frame.

Abstract: A touch sensing method adapted for an electronic apparatus including a touch panel is provided. A touch sensing method includes the following steps: obtaining a mutual-mode data by sensing a gesture applied on the touch panel in a mutual capacitance mode during a first period of a sensing frame; obtaining a self-mode data by sensing the gesture applied on the touch panel in a self capacitance mode during a second period of the sensing frame; and determining a touch location associated with the gesture on the touch panel based on the self-mode data or the mutual-mode data. Furthermore, an electronic apparatus to which the foregoing touch sensing method is applied is also provided.

Abstract: A touch sensing method adapted for an electronic apparatus including a touch panel is provided. The touch sensing method includes the following steps: driving the touch panel by a mutual capacitance mode and a self capacitance mode; sensing a gesture applied on the touch panel, wherein the gesture forms at least one touch area on the touch panel; determining at least one geometric center of the at least one touch area based on self-mode data obtained in the self capacitance mode; and determining at least one touch location associated with the gesture on the touch panel based on the at least one geometric center of the at least one touch area. Furthermore, an electronic apparatus to which the foregoing touch sensing method is applied is also provided.

Abstract: A touch device and an operating method of the touch device are provided. The operating method includes following steps. A plurality of touch values of a touch panel are obtained. During a first frame period, the obtained touch values are stored in a first memory unit, and a touch point is calculated according to the touch values stored in a second memory unit. During a second frame period, the obtained touch values are stored in the second memory unit, and the touch point is calculated according to the touch values stored in the first memory unit.

Abstract: A positioning method and a driving apparatus for a touch panel having a plurality of sense electrodes in an axis direction are disclosed. The driving apparatus detects the sense electrodes to obtain a plurality of sensed values. The driving apparatus counts the number of multiple candidate electrodes, wherein the candidate electrode is an electrode having a sensed value larger than a first threshold value. The first threshold value is increased and the number of the candidate electrodes is counted again if the number of the candidate electrodes is larger than a second threshold value. At least one electrode is selected as a positioning electrode from the candidate electrodes if the number of the candidate electrode is not larger than the second threshold value. A position of a touch point on the touch panel in the axis direction is calculated based on the position and sensed value of the positioning electrode.

Abstract: A touch sensing method adapted for an electronic apparatus including a touch panel is provided. A touch sensing method includes the following steps: obtaining a mutual-mode data by sensing a gesture applied on the touch panel in a mutual capacitance mode during a first period of a sensing frame; obtaining a self-mode data by sensing the gesture applied on the touch panel in a self capacitance mode during a second period of the sensing frame; and determining a touch location associated with the gesture on the touch panel based on the self-mode data or the mutual-mode data. Furthermore, an electronic apparatus to which the foregoing touch sensing method is applied is also provided.

Abstract: A touch sensing method adapted for an electronic apparatus including a touch panel is provided. The touch sensing method includes the following steps: driving the touch panel by a mutual capacitance mode and a self capacitance mode; sensing a gesture applied on the touch panel, wherein the gesture forms at least one touch area on the touch panel; determining at least one geometric center of the at least one touch area based on self-mode data obtained in the self capacitance mode; and determining at least one touch location associated with the gesture on the touch panel based on the at least one geometric center of the at least one touch area. Furthermore, an electronic apparatus to which the foregoing touch sensing method is applied is also provided.

Abstract: A method and an apparatus for detecting a touch point movement are provided. In the present method, a touch panel is detected to obtain the positions of m previous touch points Pi during a frame period and the positions of n current touch points Pj? during another frame period. Distances D(i,j) between the previous touch points Pi and the current touch points Pj? are calculated, and a minimum distance among valid ones of the distances D(i,j) is found out. If a distance D(a,b) among the distances D(i,j) is the minimum distance, the current touch point Pb? is defined as a touch point moved from the previous touch point Pa, and the distances D(a,1)-D(a,n) and the distances D(1,b)-D(m,b) are defined as invalid values.

Abstract: A positioning method and a driving apparatus for a touch panel having a plurality of sense electrodes in an axis direction are disclosed. The driving apparatus detects the sense electrodes to obtain a plurality of sensed values. The driving apparatus counts the number of multiple candidate electrodes, wherein the candidate electrode is an electrode having a sensed value larger than a first threshold value. The first threshold value is increased and the number of the candidate electrodes is counted again if the number of the candidate electrodes is larger than a second threshold value. At least one electrode is selected as a positioning electrode from the candidate electrodes if the number of the candidate electrode is not larger than the second threshold value. A position of a touch point on the touch panel in the axis direction is calculated based on the position and sensed value of the positioning electrode.