Abstract: Provided are a composite silicon carbide substrate and a preparation method therefor. The composite silicon carbide substrate comprises a single crystal layer, a bonding layer and a support layer which are stacked in sequence; a surface of the single crystal layer is provided with a periodic atomic step structure; the atomic step structure comprises any one of a four-width step structure, a two-width step structure or a single-width step structure.

Abstract: Provided is a preparation method for a composite substrate. The preparation method comprises the following steps: (1) growing a crystal layer on one surface of a single-crystal substrate which is used as a seed crystal to obtain a composite crystal layer structure consisting of the single-crystal substrate and the crystal layer; and (2) subjecting the composite crystal layer structure to laser irradiation to form a modified layer inside the single-crystal substrate of the composite crystal layer structure; dividing the single-crystal substrate along the modified layer by applying an external force to obtain a composite substrate. In the preparation method of the present application, by growing a low-quality crystal layer on a high-quality single-crystal substrate and then using a laser cold-cracking cutting process, the composite substrate has high preparation efficiency, good quality, and wide application range.

Abstract: The present disclosure relates to the technical field of semiconductors. Disclosed is a multi-layer semiconductor material structure and a preparation method thereof, solving the problems of the existing semiconductor materials that have poor heat dissipation, high cost, and cannot be mass-produced. The multi-layer semiconductor material structure includes a highly thermally conductive support substrate and a crystallized device function layer, where the device function layer is provided on the highly thermally conductive support substrate, and has a single-crystal surface layer.

Abstract: Provided are a composite silicon carbide substrate and a preparation method therefor, and the substrate comprises a monocrystalline silicon carbide layer and a silicon carbide support layer; a first doped silicon carbide layer is arranged between the monocrystalline silicon carbide layer and the silicon carbide support layer; a bonding interface layer is arranged between the first doped silicon carbide layer and the monocrystalline silicon carbide layer. The preparation method is: (1) depositing a first doped silicon carbide layer on the silicon carbide support layer to obtain a first composite layer; (2) bonding the first composite layer obtained in step (1) with a monocrystalline silicon carbide layer treated by ion implantation or laser irradiation, and applying stress to obtain a composite silicon carbide substrate component; and (3) subjecting the composite silicon carbide substrate component obtained in step (2) to a heat treatment to obtain the composite silicon carbide substrate.

Abstract: The present disclosure relates to the technical field of semiconductors. Disclosed is a multi-layer semiconductor material structure and a preparation method thereof, solving the problems of the existing semiconductor materials that have poor heat dissipation, high cost, and cannot be mass-produced. The multi-layer semiconductor material structure includes a highly thermally conductive support substrate and a crystallized device function layer, where the device function layer is provided on the highly thermally conductive support substrate, and has a single-crystal surface layer.