Patents by Inventor Fengxiang Gao

Fengxiang Gao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250101163
    Abstract: The invention provides a carbon dioxide-based polyurethane elastomer with damping and anti-fatigue aging properties and its preparation method. It is obtained from Component A and Component B; Component A includes: PTMG-1000 45˜60 parts, carbon dioxide-based polyol 25˜30 parts, poly-DOPO-ITA-pentanediol ester 10˜20 parts, BDO 3˜5 parts, water 0.3˜0.5 parts, N-methylimidazole 0.5˜0.8 parts, bis(2-dimethylaminoethyl) ether 0.1˜0.2 parts, needle-shaped nano-titanium dioxide 0.5 parts, hindered phenol 0.2˜0.5 parts, dibutyltin dilaurate 0.1˜0.3 parts, strontium chloride 0.005˜0.01 parts, rhodium chloride 0.02˜0.03 parts, foaming agent 0.2˜0.5 parts; Component B includes: carbon dioxide-based polyol 50˜55 parts, MDI-50 45˜50 parts, organic zinc 0.01˜0.02 parts, organic bismuth 0.01˜0.02 parts.
    Type: Application
    Filed: November 8, 2023
    Publication date: March 27, 2025
    Inventors: Quanxiao Dong, Peng Qiu, Xueliang Cui, Yubao Guo, Xingxu Bao, Songran Liu, Ruixue Niu, Simeng Yan, Yitong Shen, Huihui Xu, Songqi Zhang, Yuanqing Zhang, Junheng Xiao, Xianhong Wang, Hongming Zhang, Haitao Liu, Weibin Liu, Fengxiang Gao, Yanlei Dong, Zirui Li, Huan Zhang, Yanshan Li, Chengliang Li, Minxiao Zhang, Tiantian Song, Zhi Liu, Yongwang Wei, Xiaoru Liu, Linheng Bao, Lifen Li, Ruolin Jiang, Xiaozhao Yu, Cheng Qiu, Li Zhang, Kuan Liu, Yuqing Wen, Hang Zhao, Liting Dong, Qiang Zhao, Ning Zhang, Hongsong Guan, Ling Gao, Huitong Pei
  • Publication number: 20250069665
    Abstract: A memory device includes a memory block including memory strings, bit lines coupled to the memory strings, dummy word lines coupled to the dummy cells, first select lines coupled to the first select transistors, and a peripheral circuit coupled to the bit lines, the dummy word lines, and the first select lines. Each of the memory strings includes memory cells, first select transistors, and dummy cells. The peripheral circuit is configured to apply a turn on voltage on the first select lines, and apply a program voltage on a first dummy word line of the dummy word lines to program all dummy cells coupled to the first dummy word line.
    Type: Application
    Filed: November 14, 2024
    Publication date: February 27, 2025
    Inventors: Xueqing Huang, Wei Huang, Xing Zhou, Chan Wang, Kang Li, Cong Luo, Fengxiang Gao
  • Patent number: 12190955
    Abstract: A memory device includes a memory cell array including memory blocks and a peripheral circuit coupled to the memory cell array. Each memory block includes memory strings each including dummy cells and select transistors, bit lines coupled to the memory strings, select lines including first select lines and second select lines, and one or more dummy word lines. Each select line coupled to the select transistors. The first select lines are closer to the bit lines than the second select lines. Each dummy word line is coupled to the respective dummy cells. The dummy word lines include a first dummy word line adjacent to either the first select lines or the second select lines. The peripheral circuit is configured to apply a turn-on voltage to all the first select lines, and apply a program voltage to the first dummy word line.
    Type: Grant
    Filed: August 4, 2022
    Date of Patent: January 7, 2025
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Xueqing Huang, Wei Huang, Xing Zhou, Chan Wang, Kang Li, Cong Luo, Fengxiang Gao
  • Publication number: 20230024971
    Abstract: A memory device includes a memory cell array including memory blocks and a peripheral circuit coupled to the memory cell array. Each memory block includes memory strings each including dummy cells and select transistors, bit lines coupled to the memory strings, select lines including first select lines and second select lines, and one or more dummy word lines. Each select line coupled to the select transistors. The first select lines are closer to the bit lines than the second select lines. Each dummy word line is coupled to the respective dummy cells. The dummy word lines include a first dummy word line adjacent to either the first select lines or the second select lines. The peripheral circuit is configured to apply a turn-on voltage to all the first select lines, and apply a program voltage to the first dummy word line.
    Type: Application
    Filed: August 4, 2022
    Publication date: January 26, 2023
    Inventors: Xueqing Huang, Wei Huang, Xing Zhou, Chan Wang, Kang Li, Cong Luo, Fengxiang Gao
  • Publication number: 20110311794
    Abstract: The present invention discloses a biodegradable complex oxygen barrier film and its preparation method and application. The biodegradable complex oxygen barrier film disclosed by the present invention is constituted of at least two support layers and a barrier layer which is deposed between each two support layers. The support layer is selected from at least one of the following substances: polylactic acid, poly(butylene succinate), polycaprolactone, poly(adipate-butylene telephthalate), poly(?-hydroxybutyrate) and poly(?-hydroxybutyrate-valerate); the barrier layer which is deposed between the each two support layers is same or different, the barrier layer is selected from any one of the following: poly(propylene carbonate) and nano montmorillonite modified poly(propylene carbonate).
    Type: Application
    Filed: June 19, 2009
    Publication date: December 22, 2011
    Inventors: Qinghai Zhou, Xianhong Wang, Fengxiang Gao, Xiaojiang Zhao, Fosong Wang, Songbao Fu, Keyu Chen, Liangliang Wang, Buning Chen, Jianbo Xu, Guozhong Wang
  • Publication number: 20070117908
    Abstract: The present invention relates to improvement of the brittleness and cold flowability of a carbon dioxide-propylene oxide copolymer (PPC). The invention provides a blend comprising 50 to 98 parts by weight of a PPC; 2 to 50 parts by weight of a poly(butylenes succinate) (PBS) or poly(butylene succinate/adipate) (PBSA); 1 part by weight of a maleic anhydride, and 0.5 to 3.0 parts by weight of SiO2 and a method for producing the same. Compared with the pure PPC, the elongation rate at break of the blend of the invention increases by 3 to 15 times while the tensile strength maintains at 30 MPa or more. The blend of the PPC and PBSA can keep its dimension stably at 70° C., while the blend of the PPC and PBSA can keep its dimension stably at 55° C. No viscous flow occurs at these temperatures.
    Type: Application
    Filed: October 31, 2006
    Publication date: May 24, 2007
    Inventors: Qinghai Zhou, Xiaojiang Zhao, Xianhong Wang, Fosong Wang, Tao Xiong, Fengxiang Gao