Abstract: Provided are a transferring device and a transferring method of a micro light emitting diode. During the transferring process of the micro light emitting diode, the state of the magnetorheological fluid is controlled to achieve the physical connection of the micro light emitting diode and the transferring head to increase the acting force between the micro light emitting diode and the transferring head, thereby preventing damage during the transfer process of the micro light emitting diode for reducing the difficulty of transferring the light emitting diode. Moreover, with the simple electromagnetic device to control the connection and separation of the micro light emitting diode and the transferring head, the transferring operation of the micro light emitting diode is simplified to promote the transferring efficiency of the micro light emitting diode.

Abstract: The present invention discloses a micro light-emitting diode display device comprising a substrate, micro light-emitting diodes arrayed on an upper surface of a substrate for emitting blue light, a yellow phosphor layer disposed on a light-emitting side of the micro light-emitting diodes, and a color filter layer disposed on a light-emitting side of the yellow phosphor layer. The color filter layer comprises a red filter area, a green filter area, and a light-transmitting area. The yellow phosphor layer is provided with light-transmitting holes opened to its surface at intervals, and the light-transmitting holes are directly opposite to the light-transmitting area. The present invention further provides a method of manufacturing a micro light emitting diode display device. A color display purpose is achieved, which reduces the times of transferring the light-emitting diodes, simplifies the manufacturing process, and reduces technical difficulty for transferring micro LED.

Abstract: The present invention discloses a micro light-emitting diode display device comprising a substrate, micro light-emitting diodes arrayed on an upper surface of a substrate for emitting blue light, a yellow phosphor layer disposed on a light-emitting side of the micro light-emitting diodes, and a color filter layer disposed on a light-emitting side of the yellow phosphor layer. The color filter layer comprises a red filter area, a green filter area, and a light-transmitting area. The yellow phosphor layer is provided with light-transmitting holes opened to its surface at intervals, and the light-transmitting holes are directly opposite to the light-transmitting area. The present invention further provides a method of manufacturing a micro light emitting diode display device. A color display purpose is achieved, which reduces the times of transferring the light-emitting diodes, simplifies the manufacturing process, and reduces technical difficulty for transferring micro LED.

Abstract: Provided are a transferring device and a transferring method of a micro light emitting diode. During the transferring process of the micro light emitting diode, the state of the magnetorheological fluid is controlled to achieve the physical connection of the micro light emitting diode and the transferring head to increase the acting force between the micro light emitting diode and the transferring head, thereby preventing damage during the transfer process of the micro light emitting diode for reducing the difficulty of transferring the light emitting diode. Moreover, with the simple electromagnetic device to control the connection and separation of the micro light emitting diode and the transferring head, the transferring operation of the micro light emitting diode is simplified to promote the transferring efficiency of the micro light emitting diode.

Abstract: The present disclosure relates to a TFT, a manufacturing method of TFTs, and a CMOS component. The TFT includes a substrate, a LTPS layer arranged close to the substrate, a first light doping area and a second light doping area on the same layer with the LTPS layer and arranged at two opposite ends of the LTPS layer, a first heavy doping area and a second heavy doping area arranged at the same layer with the LTPS layer, a first insulation layer having a first portion and a second portion, and a gate arranged on the second portion. The first heavy doping area is arranged on one end of the first light doping area farther away from the LTPS layer, and the second heavy doping area is arranged on one end of the second light doping area farther away from the LTPS layer.