Abstract: In a solid precursor evaporation system configured for use in a thin film deposition system, such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray, using one or more of dipping techniques, spin-on techniques, and sintering techniques.

Abstract: A compound metal comprising HfSiN which is a n-type metal having a workfunction of about 4.0 to about 4.5, preferably about 4.3, eV which is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer. Furthermore, after annealing the stack of HfSiN/high k dielectric/interfacial layer at a high temperature (on the order of about 1000° C.), there is a reduction of the interfacial layer, thus the gate stack produces a very small equivalent oxide thickness (12 ? classical), which cannot be achieved using TaSiN.

Abstract: A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.

Abstract: The present invention provides a gate stack structure that has high mobilites and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800° C.) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×1010 charges/cm2 or less, a peak mobility of about 250 cm2/V-s or greater and substantially no mobility degradation at about 6.0×1012 inversion charges/cm2 or greater.

Abstract: The present invention provides a method for removing charged defects from a material stack including a high k gate dielectric and a metal contact such that the final gate stack, which is useful in forming a pFET device, has a threshold voltage substantially within the silicon band gap and good carrier mobility. Specifically, the present invention provides a re-oxidation procedure that will restore the high k dielectric of a pFET device to its initial, low-defect state. It was unexpectedly determined that by exposing a material stack including a high k gate dielectric and a metal to dilute oxygen at low temperatures will substantially eliminate oxygen vacancies, resorting the device threshold to its proper value. Furthermore, it was determined that if dilute oxygen is used, it is possible to avoid undue oxidation of the underlying semiconductor substrate which would have a deleterious effect on the capacitance of the final metal-containing gate stack.

Abstract: A method and system for refurbishing a metal carbonyl precursor. The method includes providing a metal precursor vaporization system containing a metal carbonyl precursor containing un-reacted and partially reacted metal carbonyl precursor, flowing a CO-containing gas through the metal precursor vaporization system to a precursor collection system in fluid communication with the metal precursor vaporization system to transfer the un-reacted metal carbonyl precursor vapor to the precursor collection system, and collecting the transferred metal carbonyl precursor in the precursor collection system. A method is provided for monitoring at least one metal carbonyl precursor parameter to determine a status of the metal carbonyl precursor and the need for refurbishing the metal carbonyl precursor.

Abstract: A method and system for improved delivery of a solid precursor. A chemically inert coating is provided on system components in a precursor delivery line to reduce decomposition of a relatively unstable precursor vapor in the precursor delivery line, thereby allowing increased delivery of the precursor vapor to a processing zone for depositing a layer on a substrate. The solid precursor can, for example, be a ruthenium carbonyl or a rhenium carbonyl. The inert coating can, for example, be a CxFy-containing polymer, such as polytetrafluoroethylene or ethylene-chlorotrifluoroethylene. Other benefits of using an inert coating include easy periodic cleaning of deposits from the precursor delivery line.

Abstract: A compound metal comprising TiC which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the TiC compound metal. Furthermore, the TiC metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000° C. allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 ? in a p-metal oxide semiconductor (pMOS) device.

Abstract: A compound metal comprising HfSiN which is a n-type metal having a workfunction of about 4.0 to about 4.5, preferably about 4.3, eV which is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer. Furthermore, after annealing the stack of HfSiN/high k dielectric/interfacial layer at a high temperature (on the order of about 1000° C.), there is a reduction of the interfacial layer, thus the gate stack produces a very small equivalent oxide thickness (12 ? classical), which cannot be achieved using TaSiN.

Abstract: A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400° C. The resultant film is dense, microcrystalline and is capable of self-passivation when treated in a hydrogen plasma or forming gas anneal.

Abstract: In a solid precursor evaporation system configured for use in a thin film deposition system, such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray, using one or more of dipping techniques, spin-on techniques, and sintering techniques.

Abstract: A method for depositing metal layers, such as Ruthenium, on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a metal carbonyl precursor in a deposition system, and depositing a metal layer from the metal carbonyl on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In the deposition system, the metal carbonyl is evaporated in a solid precursor evaporation system, and the precursor vapor is transported to the process chamber via a vapor delivery system. Further, an in-situ cleaning system is coupled to the vapor delivery system in order to perform periodic cleaning of the deposition system. Periodic in-situ cleaning permits achieving a greater deposition rate by operating the deposition system at higher temperature where precursor vapor can decompose and potentially deposit on surfaces of the deposition system.

Abstract: A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.

Abstract: A method for depositing Ru and Re metal layers on substrates with high deposition rates, low particulate contamination, and good step coverage on patterned substrates is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas and a metal precursor selected from the group consisting of a ruthenium-carbonyl precursor and a rhenium-carbonyl precursor. The method further includes depositing a Ru or Re metal layer on the substrate by a thermal chemical vapor deposition process at a process chamber pressure less than about 20 mTorr.

Abstract: A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.

Abstract: The present invention provides a gate stack structure that has high mobilites and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800° C.) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×1010 charges/cm2 or less, a peak mobility of about 250 cm2/V-s or greater and substantially no mobility degradation at about 6.0×1012 inversion charges/cm2 or greater.

Abstract: An interconnection structure is provided wherein comprises a substrate having a dielectric layer with a via opening therein; wherein the opening has a barrier layer; and electrodeposited copper.

Abstract: A deposition member adapted for discharging a deposition material during a deposition process can acquire a coating during the deposition. Such an initial emissivity value is selected for the deposition member, before any of the coating became deposited, that the emissivity of the deposition member remains substantially unchanged during the deposition process. In a representative embodiment the deposition member is coated with an appropriate thin layer for achieving the selected emissivity value.

Abstract: Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20 m?cm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiO2 containing dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta—N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta—N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.

Abstract: A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.