Patents by Inventor Fenton R. Feeney

Fenton R. Feeney has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8288237
    Abstract: A compound metal comprising TiC which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the TiC compound metal. Furthermore, the TiC metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000° C. allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 ? in a p-metal oxide semiconductor (pMOS) device.
    Type: Grant
    Filed: August 14, 2009
    Date of Patent: October 16, 2012
    Assignee: International Business Machines Corporation
    Inventors: Alessandro C. Callegari, Michael A. Gribelyuk, Dianne L. Lacey, Fenton R. Feeney, Katherine L. Saenger, Sufi Zafar