Abstract: A semiconductor LED or laser, having an active layer-shaped region composed of a layer structure comprising active layers and barrier layers. The layer structure constitutes a superlattice structure. Both the active layers and the barrier layers consists of either a stoichiometric semiconductor compound or a semi-conductor element. According to the invention, the active layers consist of n monolayers and the barrier layers consist of m monolayers, where 2.ltoreq.n.ltoreq.7, 2.ltoreq.m.ltoreq.7 and n+m.ltoreq.12, in order to obtain an optimum combination of zone-folding effect and quantum well effect. In this manner, superior lasers and LED's for wave-lengths in the visible part of the spectrum can be realized.

Abstract: An electro-luminescent structure comprising a laminar composite made up of pairs of semi-insulator films fabricated from substances developing high energy electrons when subjected to an electrical voltage each in association with phosphor films luminescing under electron impact from the semi-insulators.