Patents by Inventor Ferdinand A. Kroger

Ferdinand A. Kroger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4425194
    Abstract: A photo-voltaic power cell based on a photoelectric semiconductor compound and the method of using and making the same. The semiconductor compound in the photo-voltaic power cell of the present invention can be electrolytically formed at a cathode in an electrolytic solution by causing discharge or decomposition of ions or molecules of a non-metallic component with deposition of the non-metallic component on the cathode and simultaneously providing ions of a metal component which discharge and combine with the non-metallic component at the cathode thereby forming the semiconductor compound film material thereon. By stoichiometrically adjusting the amounts of the components, or otherwise by introducing dopants into the desired amounts, an N-type layer can be formed and thereafter a P-type layer can be formed with a junction therebetween. The invention is effective in producing homojunction semiconductor materials and heterojunction semiconductor materials.
    Type: Grant
    Filed: January 21, 1983
    Date of Patent: January 10, 1984
    Assignee: Monosolar, Inc.
    Inventors: Ferdinand A. Kroger, Robert L. Rod, Ramachandra M. P. Panicker, Mark B. Knaster
  • Patent number: 4400244
    Abstract: A photo-voltaic power cell based on a photoelectric semiconductor compound and the method of using and making the same. The semiconductor compound in the photo-voltaic power cell of the present invention can be electrolytically formed at a cathode in an electrolytic solution by causing discharge or decomposition of ions or molecules of a non-metallic component with deposition of the non-metallic component on the cathode and simultaneously providing ions of a metal component which discharge and combine with the non-metallic component at the cathode thereby forming the semiconductor compound film material thereon. By stoichiometrically adjusting the amounts of the components, or otherwise by introducing dopants into the desired amounts, an N-type layer can be formed and thereafter a P-type layer can be formed with a junction therebetween. The invention is effective in producing homojunction semiconductor materials and heterojunction semiconductor materials.
    Type: Grant
    Filed: April 8, 1982
    Date of Patent: August 23, 1983
    Assignee: Monosolar, Inc.
    Inventors: Ferdinand A. Kroger, Robert L. Rod, M. P. Ramachandra Panicker