Patents by Inventor Ferdinand Scholz
Ferdinand Scholz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10883191Abstract: There is provided a template comprising a substrate comprising sapphire and at least one III-N crystal layer, wherein III denotes at least one element of the main group III of the periodic table of the elements, selected from the group of Al, Ga and In, wherein in a region of the at least one III-N layer above the substrate comprises a mask material as an interlayer, wherein the III-N crystal layer of the template is defined by one or both of the following values (i)/(ii) of the deformation ?xx: (i) at room temperature the ?xx value lies in the range of <0; and (ii) at growth temperature the ?xx value lies in the range of ?xx?0.Type: GrantFiled: May 30, 2019Date of Patent: January 5, 2021Assignee: Freiberger Compound Materials GmbHInventors: Frank Lipski, Ferdinand Scholz, Martin Klein, Frank Habel
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Publication number: 20190276950Abstract: There is provided a template comprising a substrate comprising sapphire and at least one III-N crystal layer, wherein III denotes at least one element of the main group III of the periodic table of the elements, selected from the group of Al, Ga and In, wherein in a region of the at least one III-N layer above the substrate comprises a mask material as an interlayer, wherein the III-N crystal layer of the template is defined by one or both of the following values (i)/(ii) of the deformation ?xx: (i) at room temperature the ?xx value lies in the range of <0; and (ii) at growth temperature the ?xx value lies in the range of ?xx?0.Type: ApplicationFiled: May 30, 2019Publication date: September 12, 2019Inventors: Frank LIPSKI, Ferdinand SCHOLZ, Martin KLEIN, Frank HABEL
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Patent number: 10309037Abstract: The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.Type: GrantFiled: March 21, 2013Date of Patent: June 4, 2019Assignee: Freiberger Compound Materials GMBHInventors: Frank Lipski, Ferdinand Scholz, Martin Klein, Frank Habel
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Patent number: 9461121Abstract: A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.Type: GrantFiled: February 5, 2014Date of Patent: October 4, 2016Assignee: FREIBERGER COMPOUND MATERIALS GMBHInventors: Ferdinand Scholz, Peter Brückner, Frank Habel, Gunnar Leibiger
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Patent number: 9115444Abstract: An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.Type: GrantFiled: October 1, 2010Date of Patent: August 25, 2015Assignees: FREIBERGER COMPOUND MATERIALS GMBH, OSRAM OPTO SEMICONDUCTORS GMBHInventors: Ferdinand Scholz, Peter Brückner, Frank Habel, Matthias Peter, Klaus Köhler
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Publication number: 20150050471Abstract: The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.Type: ApplicationFiled: March 21, 2013Publication date: February 19, 2015Applicant: Freiberger Compound Materials GMBHInventors: Frank Lipski, Ferdinand Scholz, Martin Klein, Frank Habel
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Patent number: 8778078Abstract: A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.Type: GrantFiled: August 8, 2007Date of Patent: July 15, 2014Assignee: Freiberger Compound Materials GmbHInventors: Ferdinand Scholz, Peter Brückner, Frank Habel, Gunnar Leibiger
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Publication number: 20140151716Abstract: A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.Type: ApplicationFiled: February 5, 2014Publication date: June 5, 2014Applicant: FREIBERGER COMPOUND MATERIALS GmbHInventors: Ferdinand SCHOLZ, Peter Brückner, Frank Habel, Gunnar Leibiger
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Patent number: 8536030Abstract: A method of manufacturing a semipolar semiconductor crystal comprising a group-III-nitride (III-N), the method comprising: providing a substrate comprising sapphire (Al2O3) having a first surface that intersects c-planes of the sapphire; forming a plurality of trenches in the first surface, each trench having a wall whose surface is substantially parallel to a c-plane of the substrate; epitaxially growing a group-III-nitride (III-N) material in the trenches on the c-plane surfaces of their walls until the material overgrows the trenches to form a second planar surface, substantially parallel to a (20-2l) crystallographic plane of the group-III-nitride, wherein l is an integer.Type: GrantFiled: March 18, 2011Date of Patent: September 17, 2013Assignee: Freiberger Compund Materials GmbHInventors: Thomas Wunderer, Stephan Schwaiger, Ilona Argut, Rudolph Rosch, Frank Lipski, Ferdinand Scholz
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Publication number: 20110227198Abstract: A method of manufacturing a semipolar semiconductor crystal comprising a group-III-nitride (III-N), the method comprising: providing a substrate comprising sapphire (Al2O3) having a first surface that intersects c-planes of the sapphire; forming a plurality of trenches in the first surface, each trench having a wall whose surface is substantially parallel to a c-plane of the substrate; epitaxially growing a group-III-nitride (III-N) material in the trenches on the c-plane surfaces of their walls until the material overgrows the trenches to form a second planar surface, substantially parallel to a (20-2l) crystallographic plane of the group-III-nitride, wherein l is an integer.Type: ApplicationFiled: March 18, 2011Publication date: September 22, 2011Applicant: FREIBERGER COMPOUND MATERIALS GMBHInventors: Thomas WUNDERER, Stephan SCHWAIGER, Ilona ARGUT, Rudolph ROSCH, Frank LIPSKI, Ferdinand SCHOLZ
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Patent number: 7998273Abstract: An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.Type: GrantFiled: May 5, 2006Date of Patent: August 16, 2011Assignees: Freiberger Compound Materials GmbH, Osram Opto Semiconductors GmbHInventors: Ferdinand Scholz, Peter Brückner, Frank Habel, Matthias Peter, Klaus Köhler
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Publication number: 20110018106Abstract: An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.Type: ApplicationFiled: October 1, 2010Publication date: January 27, 2011Inventors: Ferdinand SCHOLZ, Peter Brückner, Frank Habel, Matthias Peter, Klaus Köhler
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Patent number: 7727332Abstract: In a process for forming a mask material on a III-N layer, wherein III denotes an element of the group III of the Periodic Table of Elements, selected from Al, Ga and In, a III-N layer having a surface is provided which comprises more than one facet. Mask material is selectively deposited only on one or multiple, but not on all facets. The deposition of mask material may be particularly carried out during epitaxial growth of a III-N layer under growth conditions, by which (i) growth of at least a further III-N layer selectively on a first type or a first group of facet(s) and (ii) a deposition of mask material selectively on a second type or a second group of facet(s) proceed simultaneously. By the process according to the invention, it is possible to produce free-standing thick III-N layers. Further, semiconductor devices or components having special structures and layers can be produced.Type: GrantFiled: December 21, 2006Date of Patent: June 1, 2010Assignee: Freiberger Compound Materials GmbHInventors: Frank Habel, Ferdinand Scholz, Barbara Neubert, Peter Brückner, Thomas Wunderer
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Publication number: 20080203409Abstract: The present invention relates to a novel process for producing (Al, Ga)N and AlGaN single crystals by means of a modified HVPE process, and also to (Al, Ga)N and AlGaN single crystals of high quality. The III-V compound semiconductors produced by the process according to the invention are used in optoelectronics, in particular for blue, white and green LEDs and also for high-power, high-temperature and high-frequency field effect transistors.Type: ApplicationFiled: February 21, 2008Publication date: August 28, 2008Applicant: Freiberger Compound Materials GmbHInventors: Gunnar Leibiger, Frank Habel, Ferdinand Scholz, Peter Bruckner
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Publication number: 20080166522Abstract: An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.Type: ApplicationFiled: May 5, 2006Publication date: July 10, 2008Applicants: FREIBERGER COMPOUND MATERIALS GMBH, OSRAM OPTO SEMICONDUCTORS GMBH, FRAUNHOFER GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E.V.Inventors: Ferdinand Scholz, Peter Bruckner, Frank Habel, Matthias Peter, Klaus Kohler
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Publication number: 20080083910Abstract: A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.Type: ApplicationFiled: August 8, 2007Publication date: April 10, 2008Inventors: Ferdinand Scholz, Peter Bruckner, Frank Habel, Gunnar Leibiger
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Publication number: 20070163490Abstract: In a process for forming a mask material on a III-N layer, wherein III denotes an element of the group III of the Periodic Table of Elements, selected from Al, Ga and In, a III-N layer having a surface is provided which comprises more than one facet. Mask material is selectively deposited only on one or multiple, but not on all facets. The deposition of mask material may be particularly carried out during epitaxial growth of a III-N layer under growth conditions, by which (i) growth of at least a further III-N layer selectively on a first type or a first group of facet(s) and (ii) a deposition of mask material selectively on a second type or a second group of facet(s) proceed simultaneously. By the process according to the invention, it is possible to produce free-standing thick III-N layers. Further, semiconductor devices or components having special structures and layers can be produced.Type: ApplicationFiled: December 21, 2006Publication date: July 19, 2007Inventors: Frank Habel, Ferdinand Scholz, Barbara Neubert, Peter Bruckner, Thomas Wunderer
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Publication number: 20060060833Abstract: A radiation-emitting optoelectronic component with an active zone having a quantum well structure (5) containing at least one first nitride compound semiconductor material. The quantum well structure (5) is grown on at least one side facet (9) of a nonplanar structure (4) containing at least one second nitride compound semiconductor material. As a result of the quantum well structure (5) being grown onto a side facet (9), piezoelectric fields caused by lattice mismatches are advantageously reduced and the homogeneity of the quantum well structure (5) is improved.Type: ApplicationFiled: August 26, 2005Publication date: March 23, 2006Applicant: Osram Opto Semiconductors GmbHInventors: Peter Bruckner, Ferdinand Scholz, Barbara Neubert, Frank Habel
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Patent number: 7005681Abstract: A radiation-emitting semiconductor component having a semiconductor body (1), which has a radiation-generating active layer (9) and a p-conducting contact layer (2), which contains InGaN or AlInGaN and to which a contact metalization (3) is applied.Type: GrantFiled: August 30, 2002Date of Patent: February 28, 2006Assignee: Osram Opto Semiconductors GmbHInventors: Stefan Bader, Viorel Dumitru, Volker Härle, Bertram Kuhn, Alfred Lell, Jürgen Off, Ferdinand Scholz, Heinz Schweizer
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Publication number: 20040259299Abstract: A radiation-emitting semiconductor component having a semiconductor body (1), which has a radiation-generating active layer (9) and a p-conducting contact layer (2), which contains InGaN or AlInGaN and to which a contact metalization (3) is applied.Type: ApplicationFiled: August 16, 2004Publication date: December 23, 2004Inventors: Stefan Bader, Viorel Dumitru, Volker Harle, Bertram Kuhn, Alfred Lell, Jurgen Off, Ferdinand Scholz, Heinz Schweizer