Patents by Inventor Ferdinando Iucolano

Ferdinando Iucolano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210091218
    Abstract: An HEMT device, comprising: a semiconductor body including a heterojunction structure; a dielectric layer on the semiconductor body; a gate electrode; a drain electrode, facing a first side of the gate electrode; and a source electrode, facing a second side opposite to the first side of the gate electrode; an auxiliary channel layer, which extends over the heterojunction structure between the gate electrode and the drain electrode, in electrical contact with the drain electrode and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.
    Type: Application
    Filed: December 8, 2020
    Publication date: March 25, 2021
    Inventors: Ferdinando IUCOLANO, Alessandro CHINI
  • Publication number: 20210091205
    Abstract: A manufacturing method of an HEMT includes: forming a heterostructure; forming a first gate layer of intrinsic semiconductor material on the heterostructure; forming a second gate layer, containing dopant impurities of a P type, on the first gate layer; removing first portions of the second gate layer so that second portions, not removed, of the second gate layer form a doped gate region; and carrying out a thermal annealing of the doped gate region so as to cause a diffusion of said dopant impurities of the P type in the first gate layer and in the heterostructure, with a concentration, in the heterostructure, that decreases as the lateral distance from the doped gate region increases.
    Type: Application
    Filed: December 10, 2020
    Publication date: March 25, 2021
    Applicant: STMICROELECTRONICS S.r.l.
    Inventor: Ferdinando IUCOLANO
  • Patent number: 10896969
    Abstract: A manufacturing method of an HEMT includes: forming a heterostructure; forming a first gate layer of intrinsic semiconductor material on the heterostructure; forming a second gate layer, containing dopant impurities of a P type, on the first gate layer; removing first portions of the second gate layer so that second portions, not removed, of the second gate layer form a doped gate region; and carrying out a thermal annealing of the doped gate region so as to cause a diffusion of said dopant impurities of the P type in the first gate layer and in the heterostructure, with a concentration, in the heterostructure, that decreases as the lateral distance from the doped gate region increases.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: January 19, 2021
    Assignee: STMICROELECTRONICS S.r.l.
    Inventor: Ferdinando Iucolano
  • Patent number: 10892357
    Abstract: An HEMT device, comprising: a semiconductor body including a heterojunction structure; a dielectric layer on the semiconductor body; a gate electrode; a drain electrode, facing a first side of the gate electrode; and a source electrode, facing a second side opposite to the first side of the gate electrode; an auxiliary channel layer, which extends over the heterojunction structure between the gate electrode and the drain electrode, in electrical contact with the drain electrode and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: January 12, 2021
    Assignee: STMICROELECTRONICS S.r.l.
    Inventors: Ferdinando Iucolano, Alessandro Chini
  • Publication number: 20200203522
    Abstract: A normally-off electronic device, comprising: a semiconductor body including a heterostructure that extends over a buffer layer; a recessed-gate electrode, extending in a direction orthogonal to the plane; a first working electrode and a second working electrode at respective sides of the gate electrode; and an active area housing, in the on state, a conductive path for a flow of electric current between the first and second working electrodes. A resistive region extends at least in part in the active area that is in the buffer layer and is designed to inhibit the flow of current between the first and second working electrodes when the device is in the off state. The gate electrode extends in the semiconductor body to a depth at least equal to the maximum depth reached by the resistive region.
    Type: Application
    Filed: March 3, 2020
    Publication date: June 25, 2020
    Inventors: Ferdinando IUCOLANO, Alfonso PATTI
  • Publication number: 20200194579
    Abstract: An HEMT includes a semiconductor body, which includes a semiconductor heterostructure, and a conductive gate region. The gate region includes: a contact region, which is made of a first metal material and contacts the semiconductor body to form a Schottky junction; a barrier region, which is made of a second metal material and is set on the contact region; and a top region, which extends on the barrier region and is made of a third metal material, which has a resistivity lower than the resistivity of the first metal material. The HEMT moreover comprises a dielectric region, which includes at least one front dielectric subregion, which extends over the contact region, delimiting a front opening that gives out onto the contact region; and wherein the barrier region extends into the front opening and over at least part of the front dielectric subregion.
    Type: Application
    Filed: December 6, 2019
    Publication date: June 18, 2020
    Inventors: Ferdinando IUCOLANO, Cristina TRINGALI
  • Publication number: 20200168718
    Abstract: A method for manufacturing an ohmic contact for a HEMT device, comprising the steps of: forming a photoresist layer, on a semiconductor body comprising a heterostructure; forming, in the photoresist layer, an opening, through which a surface region of the semiconductor body is exposed at said heterostructure; etching the surface region of the semiconductor body using the photoresist layer as etching mask to form a trench in the heterostructure; depositing one or more metal layers in said trench and on the photoresist layer; and carrying out a process of lift-off of the photoresist layer.
    Type: Application
    Filed: November 26, 2019
    Publication date: May 28, 2020
    Inventors: Ferdinando IUCOLANO, Cristina TRINGALI
  • Publication number: 20200161462
    Abstract: An HEMT includes: a heterostructure; a dielectric layer on the heterostructure; a gate electrode, which extends throughout the thickness of the dielectric layer; a source electrode; and a drain electrode. The dielectric layer extends between the gate electrode and the drain electrode and is absent between the gate electrode and the source electrode. In this way, the distance between the gate electrode and the source electrode can be designed in the absence of constraints due to a field plate that extends towards the source electrode.
    Type: Application
    Filed: November 19, 2019
    Publication date: May 21, 2020
    Inventor: Ferdinando IUCOLANO
  • Publication number: 20200152779
    Abstract: A normally-off HEMT transistor includes a heterostructure including a channel layer and a barrier layer on the channel layer; a 2DEG layer in the heterostructure; an insulation layer in contact with a first region of the barrier layer; and a gate electrode through the whole thickness of the insulation layer, terminating in contact with a second region of the barrier layer. The barrier layer and the insulation layer have a mismatch of the lattice constant (“lattice mismatch”), which generates a mechanical stress solely in the first region of the barrier layer, giving rise to a first concentration of electrons in a first portion of the two-dimensional conduction channel which is under the first region of the barrier layer which is greater than a second concentration of electrons in a second portion of the two-dimensional conduction channel which is under the second region of the barrier layer.
    Type: Application
    Filed: January 9, 2020
    Publication date: May 14, 2020
    Inventors: Ferdinando IUCOLANO, Giuseppe GRECO, Fabrizio ROCCAFORTE
  • Publication number: 20200152572
    Abstract: An electronic device, comprising plurality of source metal strips in a first metal level; a plurality of drain metal strips in the first metal level; a source metal bus in a second metal level above the first metal level; a drain metal bus, in the second metal level; a source pad, coupled to the source metal bus; and a drain pad, coupled to the drain metal bus. The source metal bus includes subregions shaped in such a way that, in top-plan view, each of them has a width which decreases moving away from the first conductive pad; the drain metal bus includes subregions shaped in such a way that, in top-plan view, each of them has a width which decreases moving away from the second conductive pad. The first and second subregions are interdigitated.
    Type: Application
    Filed: November 6, 2019
    Publication date: May 14, 2020
    Inventors: Santo Alessandro SMERZI, Maria Concetta NICOTRA, Ferdinando IUCOLANO
  • Patent number: 10651304
    Abstract: In an HEMT device, a gate region is formed in a wafer having a channel layer, a barrier layer, and a passivation layer, overlying each other. Drain and source electrodes are formed in the wafer, on different sides of the gate region. A dielectric layer is formed over the gate region and over the passivation layer. Selective portions of the dielectric layer are removed by a plurality of etches so as to form one or more cavities between the gate region and the drain electrode. The one or more cavities have a plurality of steps at an increasing distance from the wafer moving from the gate region to the drain electrode. The cavity is then filled with conductive material to form a field plate coupled to the source electrode, extending over the gate region, and having a surface facing the wafer and having a plurality of steps.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: May 12, 2020
    Assignee: STMICROELECTRONICS S.R.L.
    Inventor: Ferdinando Iucolano
  • Publication number: 20200091313
    Abstract: A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.
    Type: Application
    Filed: November 20, 2019
    Publication date: March 19, 2020
    Inventors: Ferdinando IUCOLANO, Alfonso PATTI, Alessandro Chini
  • Patent number: 10566450
    Abstract: A normally-off HEMT transistor includes a heterostructure including a channel layer and a barrier layer on the channel layer; a 2DEG layer in the heterostructure; an insulation layer in contact with a first region of the barrier layer; and a gate electrode through the whole thickness of the insulation layer, terminating in contact with a second region of the barrier layer. The barrier layer and the insulation layer have a mismatch of the lattice constant (“lattice mismatch”), which generates a mechanical stress solely in the first region of the barrier layer, giving rise to a first concentration of electrons in a first portion of the two-dimensional conduction channel which is under the first region of the barrier layer which is greater than a second concentration of electrons in a second portion of the two-dimensional conduction channel which is under the second region of the barrier layer.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: February 18, 2020
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Ferdinando Iucolano, Giuseppe Greco, Fabrizio Roccaforte
  • Publication number: 20200051823
    Abstract: An HEMT device of a normally-on type, comprising a heterostructure; a dielectric layer extending over the heterostructure; and a gate electrode extending right through the dielectric layer. The gate electrode is a stack, which includes: a protection layer, which is made of a metal nitride with stuffed grain boundaries and extends over the heterostructure, and a first metal layer, which extends over the protection layer and is completely separated from the heterostructure by said protection layer.
    Type: Application
    Filed: August 7, 2019
    Publication date: February 13, 2020
    Inventors: Ferdinando Iucolano, Paolo Badala'
  • Patent number: 10522646
    Abstract: A HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.
    Type: Grant
    Filed: May 19, 2016
    Date of Patent: December 31, 2019
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Ferdinando Iucolano, Alfonso Patti, Alessandro Chini
  • Patent number: 10516041
    Abstract: An HEMT includes a buffer layer, a hole-supply layer on the buffer layer, a heterostructure on the hole-supply layer, and a source electrode. The hole-supply layer is made of P-type doped semiconductor material, the buffer layer is doped with carbon, and the source electrode is in direct electrical contact with the hole-supply layer, such that the hole-supply layer can be biased to facilitate the transport of holes from the hole-supply layer to the buffer layer.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: December 24, 2019
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Ferdinando Iucolano, Alessandro Chini
  • Publication number: 20190355842
    Abstract: In an HEMT device, a gate region is formed in a wafer having a channel layer, a barrier layer, and a passivation layer, overlying each other. Drain and source electrodes are formed in the wafer, on different sides of the gate region. A dielectric layer is formed over the gate region and over the passivation layer. Selective portions of the dielectric layer are removed by a plurality of etches so as to form one or more cavities between the gate region and the drain electrode. The one or more cavities have a plurality of steps at an increasing distance from the wafer moving from the gate region to the drain electrode. The cavity is then filled with conductive material to form a field plate coupled to the source electrode, extending over the gate region, and having a surface facing the wafer and having a plurality of steps.
    Type: Application
    Filed: July 30, 2019
    Publication date: November 21, 2019
    Inventor: Ferdinando IUCOLANO
  • Publication number: 20190288100
    Abstract: An HEMT device, comprising: a semiconductor body including a heterojunction structure; a dielectric layer on the semiconductor body; a gate electrode; a drain electrode, facing a first side of the gate electrode; and a source electrode, facing a second side opposite to the first side of the gate electrode; an auxiliary channel layer, which extends over the heterojunction structure between the gate electrode and the drain electrode, in electrical contact with the drain electrode and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.
    Type: Application
    Filed: June 4, 2019
    Publication date: September 19, 2019
    Inventors: Ferdinando IUCOLANO, Alessandro CHINI
  • Patent number: 10411123
    Abstract: In an HEMT device, a gate region is formed in a wafer having a channel layer, a barrier layer, and a passivation layer, overlying each other. Drain and source electrodes are formed in the wafer, on different sides of the gate region. A dielectric layer is formed over the gate region and over the passivation layer. Selective portions of the dielectric layer are removed by a plurality of etches so as to form one or more cavities between the gate region and the drain electrode. The one or more cavities have a plurality of steps at an increasing distance from the wafer moving from the gate region to the drain electrode. The cavity is then filled with conductive material to form a field plate coupled to the source electrode, extending over the gate region, and having a surface facing the wafer and having a plurality of steps.
    Type: Grant
    Filed: July 16, 2018
    Date of Patent: September 10, 2019
    Assignee: STMICROELECTRONICS S.R.L.
    Inventor: Ferdinando Iucolano
  • Patent number: 10396192
    Abstract: A method for manufacturing a HEMT transistor comprising the steps of: providing a wafer comprising a semiconductor body including a heterojunction structure formed by semiconductor materials that include elements of Groups III-V of the Periodic Table, and a dielectric layer on the semiconductor body; etching selective portions of the wafer, thus exposing a portion of the heterojunction structure; forming an interface layer by a surface reconstruction process, of a semiconductor compound formed by elements of Groups III-V of the Periodic Table, in the exposed portion of the heterojunction structure; and forming a gate electrode, including a gate dielectric and a gate conductive region, on said interface layer.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: August 27, 2019
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Ferdinando Iucolano, Andrea Severino, Maria Concetta Nicotra, Alfonso Patti