Abstract: A system for ultrasonically cleaning one or more wires of a wire saw for slicing semiconductor or solar material into wafers. The system includes an ultrasonic transducer connected to a sonotrode. The system also includes a sonotrode plate adjacent to one or more of the wires. The sonotrode plate has an opening that exposes the sonotrode to one or more of the wires. The system further includes a tank for delivering a flow of liquid to contact the sonotrode and one or more of the wires. The tank is positioned on the same side of the wires as the sonotrode plate. The ultrasonic transducer is configured to vibrate and form cavitations in the liquid for the removal of contaminants from a surface of one or more of the wires.

Abstract: Methods are disclosed for controlling the displacement of bearings in a wire saw machine. The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by controlling displacement of bearings in the wire saw by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings supporting wire guides of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.

Abstract: Systems and are disclosed for controlling the temperature of bearings in a wire saw machine. The systems described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by controlling the temperature of bearings in the wire saw by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings supporting wire guides of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.

Abstract: Systems are disclosed for controlling the surface profiles of wafers cut in a wire saw machine. The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings supporting wire guides of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.

Abstract: Methods are disclosed for controlling surface profiles of wafers cut in a wire saw machine. The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings supporting wire guides of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.

Abstract: A wire saw (10) for simultaneously slicing multiple, generally cylindrical monocrystalline ingots (14) into wafers. The wire saw includes a cutting head (16), an ingot support (12), and multiple generally parallel lengths of cutting wire (18) defining a cutting web (30). A slurry delivery system includes nozzles (34, 36, and 38) positioned for dispensing slurry along the wire web generally at lateral sides of each ingot. A process for simultaneously slicing at least two generally cylindrical semiconductor ingots into wafers includes mounting at least two ingots to a common ingot support, moving the ingot support relative to the cutting web so that the two ingots simultaneously press against the cutting web at cutting regions, and dispensing a liquid slurry to at least three locations on the wire web including two outermost sides of the cutting regions and a location between each pair of ingots.