Abstract: A method of transferring data over a plurality of optical channels. Bus access is requested. A bus grant is issued and received by the bus requester. The bus requester places data and a clock on an optical bus with the data synchronized to the clock.

Abstract: A high speed optical channel including an optical driver and a photodetector in a CMOS photoreceiver. The optical channel driver includes a FET driver circuit driving a passive element (e.g., an integrated loop inductor) and a vertical cavity surface emitting laser (VCSEL) diode. The VCSEL diode is biased by a bias supply. The integrated loop inductor may be integrated in CMOS technology and on the same IC chip as either/both of the FET driver and the VCSEL diode. The photodetector is in a semiconductor (silicon) layer that may be on an insulator layer, i.e., SOI. One or more ultrathin metal electrodes (<2000 ?) on the silicon layer forms a Schottky barrier diode junction which in turn forms a quantum well containing a two dimensional electron gas between the ultrathin metal electrode and the Schottky barrier diode junction.

Abstract: An optically connectable circuit board and optical components mounted thereon. At least one component includes optical transceivers and provides an optical connection to the board. Electronic components may be directly connected to the board electrically or optically. Also, some electronic components may be indirectly connected optically to the board through intermediate optical components.

Abstract: An optically connectable circuit board and optical components mounted thereon. At least one component includes optical transceivers and provides an optical connection to the board. Electronic components may be directly connected to the board electrically or optically. Also, some electronic components may be indirectly connected optically to the board through intermediate optical components.

Abstract: An optically connectable circuit board and optical components mounted thereon. At least one component includes optical transceivers and provides an optical connection to the board. Electronic components may be directly connected to the board electrically or optically. Also, some electronic components may be indirectly connected optically to the board through intermediate optical components.

Abstract: A high speed optical channel including an optical driver and a photodetector in a CMOS photoreceiver. The optical channel driver includes a FET driver circuit driving a passive element (e.g., an integrated loop inductor) and a vertical cavity surface emitting laser (VCSEL) diode. The VCSEL diode is biased by a bias supply. The integrated loop inductor may be integrated in CMOS technology and on the same IC chip as either/both of the FET driver and the VCSEL diode. The photodetector is in a semiconductor (silicon) layer that may be on an insulator layer, i.e., SOI. One or more ultrathin metal electrodes (<2000 ?) on the silicon layer forms a Schottky barrier diode junction which in turn forms a quantum well containing a two dimensional electron gas between the ultrathin metal electrode and the Schottky barrier diode junction.

Abstract: A high speed optical channel including an optical driver and a photodetector in a CMOS photoreceiver. The optical channel driver includes a FET driver circuit driving a passive element (e.g., an integrated loop inductor) and a vertical cavity surface emitting laser (VCSEL) diode. The VCSEL diode is biased by a bias supply. The integrated loop inductor may be integrated in CMOS technology and on the same IC chip as either/both of the FET driver and the VCSEL diode. The photodetector is in a semiconductor (silicon) layer that may be on an insulator layer, i.e., SOI. One or more ultrathin metal electrodes (<2000 ?) on the silicon layer forms a Schottky barrier diode junction which in turn forms a quantum well containing a two dimensional electron gas between the ultrathin metal electrode and the Schottky barrier diode junction.

Abstract: An optically connectable circuit board and optical components mounted thereon. At least one component includes optical transceivers and provides an optical connection to the board. Electronic components may be directly connected to the board electrically or optically. Also, some electronic components may be indirectly connected optically to the board through intermediate optical components.

Abstract: A high speed optical channel including an optical driver and a photodetector in a CMOS photoreceiver. The optical channel driver includes a FET driver circuit driving a passive element (e.g., an integrated loop inductor) and a vertical cavity surface emitting laser (VCSEL) diode. The VCSEL diode is biased by a bias supply. The integrated loop inductor may be integrated in CMOS technology and on the same IC chip as either/both of the FET driver and the VCSEL diode. The photodetector is in a semiconductor (silicon) layer that may be on an insulator layer, i.e., SOI. One or more ultrathin metal electrodes (<2000 ?) on the silicon layer forms a Schottky barrier diode junction which in turn forms a quantum well containing a two dimensional electron gas between the ultrathin metal electrode and the Schottky barrier diode junction.

Abstract: A method of continuity checking an optical connection. An first optical source transmits an optical signal. A first optical receiver is checked for the optical signal. A second optical source transmits another optical signal. A second optical receiver checks for the other optical signal.

Abstract: An electronic system with components communicating over optical channels, a board initialization and continuity check and a method of transferring data over the optical channels. The system include a backplane with board to board signal wiring and a shared optical bus. Optical gratings are attached to the backplane and to circuit boards to pass optical energy between an optical transceiver and board/backplane. An optical transceiver at each end of each optical jumper relays optical signals between the optical jumpers and the connected circuit board or the backplane. Optical jumpers optically connect the circuit boards to the backplane.

Abstract: An optically connectable circuit board and optical components mounted thereon. At least one component includes optical transceivers and provides an optical connection to the board. Electronic components may be directly connected to the board electrically or optically. Also, some electronic components may be indirectly connected optically to the board through intermediate optical components.

Abstract: A novel photodetector CMOS-compatible photodetector is disclosed in which photo-generation of carriers (electrons) is carried out in the metal of the electrodes, rather than as electron-hole pairs in the semiconductor on which the metal electrodes are deposited. The novel photo detector comprises a silicon or other semiconductor substrate material characterized by an electron energy bandgap, and a pair of metal electrodes disposed upon a surface of the silicon to define therebetween a border area of the surface. One of the two electrodes being exposed to the incident radiation and covering an area of said surface which is larger than the aforesaid border area, the aforesaid metal of the electrodes being characterized by a Fermi level which is within said electron energy bandgap.

Abstract: A high speed optical channel including an optical driver and a photodetector in a CMOS photoreceiver. The optical channel driver includes a FET driver circuit driving a passive element (e.g., an integrated loop inductor) and a vertical cavity surface emitting laser (VCSEL) diode. The VCSEL diode is biased by a bias supply. The integrated loop inductor may be integrated in CMOS technology and on the same IC chip as either/both of the FET driver and the VCSEL diode. The photodetector is in a semiconductor (silicon) layer that may be on an insulator layer, i.e., SOI. One or more ultrathin metal electrodes (<2000 Å) on the silicon layer forms a Schottky barrier diode junction which in turn forms a quantum well containing a two dimensional electron gas between the ultrathin metal electrode and the Schottky barrier diode junction.

Abstract: A method of continuity checking an optical connection. An first optical source transmits an optical signal. A first optical receiver is checked for the optical signal. A second optical source transmits another optical signal. A second optical receiver checks for the other optical signal.

Abstract: An optically connectable circuit board and optical components mounted thereon. At least one component includes optical transceivers and provides an optical connection to the board. Electronic components may be directly connected to the board electrically or optically. Also, some electronic components may be indirectly connected optically to the board through intermediate optical components.

Abstract: An electronic system with components communicating over optical channels, a board initialization and continuity check and a method of transferring data over the optical channels. The system include a backplane with board to board signal wiring and a shared optical bus. Optical gratings are attached to the backplane and to circuit boards to pass optical energy between an optical transceiver and board/backplane. An optical transceiver at each end of each optical jumper relays optical signals between the optical jumpers and the connected circuit board or the backplane. Optical jumpers optically connect the circuit boards to the backplane.

Abstract: A method of transferring data over a plurality of optical channels. Bus access is requested. A bus grant is issued and received by the bus requester. The bus requester places data and a clock on an optical bus with the data synchronized to the clock.

Abstract: A novel photodetector CMOS-compatible photodetector is disclosed in which photo-generation of carriers (electrons) is carried out in the metal of the electrodes, rather than as electron-hole pairs in the semiconductor on which the metal electrodes are deposited. The novel photo detector comprises a silicon or other semiconductor substrate material characterized by an electron energy bandgap, and a pair of metal electrodes disposed upon a surface of the silicon to define therebetween a border area of the surface. One of the two electrodes being exposed to the incident radiation and covering an area of said surface which is larger than the aforesaid border area, the aforesaid metal of the electrodes being characterized by a Fermi level which is within said electron energy bandgap.