Abstract: A method can include applying a first voltage to a first memory cell to activate the first memory cell, applying a second voltage to a second memory cell coupled in series with the first memory cell to activate the second memory cell so that current flows through the first and second memory cells, and generating an output responsive to the current. The first voltage and a threshold voltage of the second memory cell can be such that the current is proportional to a product of the first voltage and the threshold voltage of the second memory cell.

Abstract: A method can include applying a first voltage to a first memory cell to activate the first memory cell, applying a second voltage to a second memory cell coupled in series with the first memory cell to activate the second memory cell so that current flows through the first and second memory cells, and generating an output responsive to the current. The first voltage and a threshold voltage of the second memory cell can be such that the current is proportional to a product of the first voltage and the threshold voltage of the second memory cell.

Abstract: A method can include applying a first voltage to a first memory cell to activate the first memory cell, applying a second voltage to a second memory cell coupled in series with the first memory cell to activate the second memory cell so that current flows through the first and second memory cells, and generating an output responsive to the current. The first voltage and a threshold voltage of the second memory cell can be such that the current is proportional to a product of the first voltage and the threshold voltage of the second memory cell.

Abstract: A method can include applying a first voltage to a first memory cell to activate the first memory cell, applying a second voltage to a second memory cell coupled in series with the first memory cell to activate the second memory cell so that current flows through the first and second memory cells, and generating an output responsive to the current. The first voltage and a threshold voltage of the second memory cell can be such that the current is proportional to a product of the first voltage and the threshold voltage of the second memory cell.

Abstract: Thin film detector of ultraviolet radiation with high spectral selectivity option, and a structure placed between two electrodes, formed by the superposition of semiconductor thin films such as hydrogenated amorphous silicon and its alloys with carbon. The device is able to absorb a large quantity of UV radiation and to convert it into electric current being transparent to photons of longer wavelengths. Its deposition technique allows fabrication on substrates of glass, plastic, metal, ceramic types of materials (also opaque, also flexible), on which a conductor material film has been predeposited. It can be fabricated on substrates of any size.

Abstract: Variable spectrum photodetector allowing the detection of the three main colors of the visible spectrum (red, green and blue) by varying the bias voltage by a few volts around zero. It is built using known thin-film technology and is externally connected by means of two electrical terminals, thus rendering the realization of integrated 2D matrices extremely easy. It is especially applied to the manufacture of TV cameras, fax machines, etc. and of all systems requiring images reconstruction, its structure consisting of a specific overlaying of thin films, preferably of hydrogenated amorphous silicon (a-Si:H) and of its silicon-carbon alloys (a-SiC:H) and silicon-germanium (a-SiGe:H) placed by "Glow Discharge" technique. The invention can be applied to big dimensions structures. Advantages essentially are electrical simplicity and, consequently, it has more maintainability.