Abstract: The present invention relates to a system and method for efficiently generating images and videos as an array of objects of interest (e.g., faces and hands, plates, etc.) in a desired resolution to perform vision tasks, such as face recognition, facial expression analysis, detection of hand gestures, among others. The composition of such images and videos takes into account the similarity of objects in the same category to encode them more effectively, providing savings in terms of time transmission and storage. Transmission time is less advantage to such a system in terms of efficiency, while less low cost storage means for storing data.

Abstract: A system and method for defining class material based on students profiles including: adding learning objects by the user through input/output interface to a class builder module, in an iterative process; automatically or manually generating the group of students by the user; processing the learning object recommendations considering a recommendation system algorithm, machine learning, rules-based system or any algorithm of artificial intelligence; removing the recommendations if the user does not accept the recommendations; requesting the generation of more recommendations by the user, in an iterative process; creating a class package; and storing the class package in the class compositions repository in domain dependent databases.

Abstract: The present invention relates to a system and method for efficiently generating images and videos as an array of objects of interest (e.g., faces and hands, plates, etc.) in a desired resolution to perform vision tasks, such as face recognition, facial expression analysis, detection of hand gestures, among others. The composition of such images and videos takes into account the similarity of objects in the same category to encode them more effectively, providing savings in terms of time transmission and storage. Transmission time is less advantage to such a system in terms of efficiency, while less low cost storage means for storing data.

Abstract: Various embodiments perform a fair ranking of citizen sensor reports. In one embodiment, a plurality of citizen sensor reports is received. Each of the plurality of citizen sensor reports is associated with a reporting target. At least one context event is identified for each of the plurality of citizen sensor reports. An impact factor is calculated for each the identified context events with respect to their citizen sensor reports. A rank is assigned to each of the plurality of citizen sensor reports with respect to each remaining citizen sensor report in the plurality of citizen sensor reports. The rank is determined based on at last a set of information within the citizen sensor report and the impact factor calculated for the citizen sensor report.

Abstract: A self-rousing surveillance system, method and computer program product for monitoring activity across a geographical location. Surveillance sensors are distributed about a geographical location and normally in a low surveillance state. A sensor controller controls data collection by each surveillance sensors. An event monitor receives reports indicating events at local areas within the geographical location. The event monitor identifies local areas with each report.

Abstract: Various embodiments prioritize incidents associated with citizen sensor reports. In one embodiment, a plurality of citizen sensor reports is received from a plurality of users. A context associated with each of the plurality of citizen sensor reports is determined. A set of citizen sensor reports associated with at least one incident from a plurality of different incidents is identified based on the determined context. A severity level of the incident associated with the set of citizen sensor reports is calculated for each of the set of citizen sensor reports based on a reputation value assigned to each of a set of users who generated the set of citizen sensor reports. Each of the plurality of incidents is prioritized based on their calculated severity levels.

Abstract: In a replacement gate approach, a top area of a gate opening may receive a superior cross-sectional shape on the basis of a material erosion process, wherein a sacrificial material may protect sensitive materials, such as a high-k dielectric material, in the gate opening. In one illustrative embodiment, the sacrificial material may be applied after depositing a work function adjusting species in the gate opening.

Abstract: In sophisticated approaches for forming high-k metal gate electrode structures in an early manufacturing stage, a threshold adjusting semiconductor alloy may be deposited on the basis of a selective epitaxial growth process without affecting the back side of the substrates. Consequently, any negative effects, such as contamination of substrates and process tools, reduced surface quality of the back side and the like, may be suppressed or reduced by providing a mask material and preserving the material at least during the selective epitaxial growth process.

Abstract: In sophisticated approaches for forming high-k metal gate electrode structures in an early manufacturing stage, a threshold adjusting semiconductor alloy may be deposited on the basis of a selective epitaxial growth process without affecting the back side of the substrates. Consequently, any negative effects, such as contamination of substrates and process tools, reduced surface quality of the back side and the like, may be suppressed or reduced by providing a mask material and preserving the material at least during the selective epitaxial growth process.

Abstract: In sophisticated approaches for forming high-k metal gate electrode structures in an early manufacturing stage, a threshold adjusting semiconductor alloy may be deposited on the basis of a selective epitaxial growth process without affecting the back side of the substrates. Consequently, any negative effects, such as contamination of substrates and process tools, reduced surface quality of the back side and the like, may be suppressed or reduced by providing a mask material and preserving the material at least during the selective epitaxial growth process.

Abstract: In sophisticated approaches for forming high-k metal gate electrode structures in an early manufacturing stage, a threshold adjusting semiconductor alloy may be deposited on the basis of a selective epitaxial growth process without affecting the back side of the substrates. Consequently, any negative effects, such as contamination of substrates and process tools, reduced surface quality of the back side and the like, may be suppressed or reduced by providing a mask material and preserving the material at least during the selective epitaxial growth process.

Abstract: In a replacement gate approach, a top area of a gate opening may receive a superior cross-sectional shape on the basis of a material erosion process, wherein a sacrificial material may protect sensitive materials, such as a high-k dielectric material, in the gate opening. In one illustrative embodiment, the sacrificial material may be applied after depositing a work function adjusting species in the gate opening.

Abstract: By patterning a spacer layer stack and etching a cavity in an in situ etch process, the process complexity, as well as the uniformity, during the formation of embedded strained semiconductor layers may be significantly enhanced. In an initial phase, the spacer layer stack may be patterned on the basis of an anisotropic etch step with a high degree of uniformity, since a selectivity between individual stack layers may not be necessary. Thereafter, a cleaning process may be performed followed by a cavity etch process, wherein a reduced over-etch time during the spacer patterning process significantly contributes to the uniformity of the finally obtained cavities, while the in situ nature of the process also provides a reduced overall process time.

Abstract: By patterning a spacer layer stack and etching a cavity in an in situ etch process, the process complexity, as well as the uniformity, during the formation of embedded strained semiconductor layers may be significantly enhanced. In an initial phase, the spacer layer stack may be patterned on the basis of an anisotropic etch step with a high degree of uniformity, since a selectivity between individual stack layers may not be necessary. Thereafter, a cleaning process may be performed followed by a cavity etch process, wherein a reduced over-etch time during the spacer patterning process significantly contributes to the uniformity of the finally obtained cavities, while the in situ nature of the process also provides a reduced overall process time.