Abstract: Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a waveform generator. The waveform generator generally includes a first voltage stage having: a first voltage source; a first switch; a ground reference; a transformer having a first transformer ratio, the first transformer comprising: a primary winding coupled to the first voltage source and the ground reference; and a secondary winding having a first end and a second end, wherein the first end is coupled to the ground reference, and the second end is configured to be coupled to a load through a common node; and a first diode coupled in parallel with the primary winding of the first transformer. The waveform generator generally also includes one or more additional voltage stages coupled to a load through the common node.

Abstract: Embodiments of the disclosure include an electric field measurement system that includes a first light source, a first light sensor configured to receive electromagnetic energy transmitted from the first light source, an electro-optic sensor, and a controller. The electro-optic sensor may include a package comprising a first electro-optic crystal disposed within a body; and at least one optical fiber. The optical fiber is configured to transmit electromagnetic energy transmitted from the first light source to a surface of the first electro-optic crystal, and transmit at least a portion of the electromagnetic energy transmitted to the surface of the first electro-optic crystal and subsequently passed through at least a portion of the first electro-optic crystal to the first light sensor that is configured to generate a signal based on an attribute of the electromagnetic energy received by the first light sensor from the at least one optical fiber.

Abstract: Methods and apparatus for forming plasma in a process chamber use an annular exciter formed of a first conductive material with a first end electrically connected to an RF power source that provides RF current and a second end connected to a ground and an annular applicator, physically separated from the annular exciter, formed of a second conductive material with at least one angular split with an angle forming an upper overlap portion and a lower overlap portion separated by a high K dielectric material which is configured to provide capacitance in conjunction with an inductance of the annular applicator to form a resonant circuit that is configured to resonate when the annular exciter flows RF current that inductively excites the annular applicator to a resonant frequency which forms azimuthal plasma from the annular applicator.

Abstract: Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a waveform generator. The waveform generator generally includes a first voltage stage having: a first voltage source; a first switch; a ground reference; a transformer having a first transformer ratio, the first transformer comprising: a primary winding coupled to the first voltage source and the ground reference; and a secondary winding having a first end and a second end, wherein the first end is coupled to the ground reference, and the second end is configured to be coupled to a load through a common node; and a first diode coupled in parallel with the primary winding of the first transformer. The waveform generator generally also includes one or more additional voltage stages coupled to a load through the common node.

Abstract: Apparatus provide plasma to a processing volume of a chamber. The Apparatus may comprise a plurality of plasma sources, each with at least a dielectric tube inlet which is at least partially surrounded by a conductive tube which is configured to be connected to RF power to generate plasma and a gas inlet positioned opposite the dielectric tube inlet for a process gas and a dielectric tube directly connected to each of the plurality of plasma sources where the dielectric tube is configured to at least partially contain plasma generated by the plurality of plasma sources and to release radicals generated in the plasma via holes in the dielectric tube.

Abstract: A process for treatment of nanoparticles of mineral filler for obtaining processed nanoparticles for use in polymerization in the presence of nanoparticles which includes the steps of (a) drying a mineral filler with an inert gas to remove catalyst poisons; (b) mixing the mineral filler dried obtained in step (a) with a swelling agent in a liquid state or near a critical state or in the supercritical state; (c) subjecting the swelling agent of the mixture obtained in step (b) to an endoenthalpic or isoentalphic phase change by altering the conditions of the temperature and/or pressure; (d) subjecting the nanoparticles of the mixture obtained in step (c) to contact of scavenging agent to react with catalyst poisons; then the mixture obtained in step (d) can be dried in a step (e) with an inert gas to remove sub-products from scavenging agent and catalyst poisons to obtain the treated nanoparticles.

Abstract: Methods and apparatus of controlling a temperature of components in a process chamber that is heated by a plasma or a heater and cooled by a coolant flow through a heat exchanger. An apparatus, for example, can include a chuck assembly and/or a plasma source including a respective cooling plate; a proportional bypass valve connected between the respective cooling plate and a heat exchanger; a temperature sensor configured to measure a temperature of the coolant through the outlet channel of the respective cooling plate; and a controller that receives a measured temperature from the temperature sensor measuring, and in response to receiving the measured temperature controls a rate of flow of the coolant through the first coolant output line and the second coolant output line of the proportional bypass valve.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a coupling each of the reservoirs to a common secondary reservoir. Heat transfer fluid is pumped from the secondary reservoir to either the hot or cold reservoir in response to a low level sensed in the reservoir. In an embodiment, both the hot and cold reservoirs are contained in a same platform as the secondary reservoir with the hot and cold reservoirs disposed above the secondary reservoir to permit the secondary reservoir to catch gravity driven overflow from either the hot or cold reservoir.

Abstract: Embodiments of the invention include an apparatus, system, and method for cooling a pedestal for supporting a workpiece during plasma processing. An embodiment of a pedestal includes: a base over which the workpiece is to be disposed, a plurality of nozzles to supply a fluid from a supply plenum to impinge on a surface of the base, and a plurality of return conduits to return the supplied fluid to a return plenum. The fluid to be supplied by the plurality of nozzles can be projected as one or more jets submerged in surrounding fluid or as a spray that emerges from a surrounding fluid within a volume between the plurality of nozzles and the base to impinge on the surface of the base.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a coupling each of the reservoirs to a common secondary reservoir. Heat transfer fluid is pumped from the secondary reservoir to either the hot or cold reservoir in response to a low level sensed in the reservoir. In an embodiment, both the hot and cold reservoirs are contained in a same platform as the secondary reservoir with the hot and cold reservoirs disposed above the secondary reservoir to permit the secondary reservoir to catch gravity driven overflow from either the hot or cold reservoir.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a coupling each of the reservoirs to a common secondary reservoir. Heat transfer fluid is pumped from the secondary reservoir to either the hot or cold reservoir in response to a low level sensed in the reservoir. In an embodiment, both the hot and cold reservoirs are contained in a same platform as the secondary reservoir with the hot and cold reservoirs disposed above the secondary reservoir to permit the secondary reservoir to catch gravity driven overflow from either the hot or cold reservoir.

Abstract: Methods and apparatus for particle reduction in throttle gate valves used in substrate process chambers are provided herein. In some embodiments, a gate valve for use in a process chamber includes a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a plurality of gas ports disposed in the gate valve configured to direct a gas flow into a portion of the gate valve fluidly coupled to the opening.

Abstract: The present invention describes a metallocene catalyst based on a transition metal of group 4 or 5 of the periodic table, supported on a hybrid catalytic support provided with aliphatic organic groups, and a process for supporting metallocene on the hybrid catalytic support. The supported metallocene catalyst provides an ethylene polymer with broad or bimodal molecular weight distribution, in the presence of only one metallocene complex on the support.

Abstract: The present invention describes a metallocene catalyst based on a transition metal of group 4 or 5 of the periodic table, supported on a hybrid catalytic support provided with aliphatic organic groups, and a process for supporting metallocene on the hybrid catalytic support. The supported metallocene catalyst provides an ethylene polymer with broad or bimodal molecular weight distribution, in the presence of only one metallocene complex on the support.

Abstract: A process for treatment of nanoparticles of mineral filler for obtaining 5 processed nanoparticles for use in polymerization in the presence of nanopartciles which includes the steps of (a) drying a mineral filler with an inert gas for remove catalyst poisons; (b) mixing the mineral filler dried obtained in step (a) with a swelling agent in a liquid state or near a critical state or in the supercritical state; (c) subjecting the swelling agent of the 10 mixture obtained in step (b) to an endoenthalpic or isoentalphic phase change by altering the conditions of the temperature and/or pressure; (d) subjecting the nanoparticles of the mixture obtained in step (c) to contact of scavenging agent to react with catalyst poisons; then the mixture obtained in step (d) can be dried in a step (e) with an inert gas to remove sub-products 15 from scavenging agent and catalyst poisons to obtain the treated nanoparticles.

Abstract: The present invention describes a metallocene catalyst based on a transition metal of group 4 or 5 of the periodic table, supported on a hybrid catalytic support provided with aliphatic organic groups, and a process for supporting metallocene on the hybrid catalytic support. The supported metallocene catalyst provides an ethylene polymer with broad or bimodal molecular weight distribution, in the presence of only one metallocene complex on the support.

Abstract: The present invention describes a metallocene catalyst based on a transition metal of group 4 or 5 of the periodic table, supported on a hybrid catalytic support provided with aliphatic organic groups, and a process for supporting metallocene on the hybrid catalytic support. The supported metallocene catalyst provides an ethylene polymer with broad or bimodal molecular weight distribution, in the presence of only one metallocene complex on the support.

Abstract: The present invention describes a metallocene catalyst based on a transition metal of group 4 or 5 of the periodic table; supported on a hybrid catalytic support with aliphatic organic groups and a process for supporting metallocene on the hybrid catalytic support. The supported metallocene catalyst provides an ethylene polymer with broad or bimodal molecular weight distribution in the presence of only one metallocene complex on the support.

Abstract: The invention relates to the composition, preparation and use of a formulation as an adjuvant for human or animal use, said formulation comprising at least one bile acid or salts thereof and saponin, in order to enhance the immune response against an antigen, which may or may not be well defined, including but not limited to bacterins, antigens and antigenic preparations that are viral, bacterial or parasitic, and antigens associated with diseases such as different types of cancer. The antigens used can be isolated from pathogens, as well as products resulting from enzymatic or chemical modification, synthetic or recombinant antigens, or mixtures of the same.

Abstract: The present invention relates to a metallocene catalyst based on a transition metal of group 4 or 5 of the periodic table, supported on a hybrid catalytic support provided with aliphatic organic groups. One also describes a process for supporting metallocene on said hybrid catalytic support of aliphatic organic groups. The supported metallocene catalyst of the present invention exhibits, as its main advantage, the fact of producing an ethylene polymer with broad or bimodal molar mass distribution, by using only one type of metallocene complex on the support. As a result, on obtains, better processability of the resin obtained and, therefore, a potential reduction of the processing cost.