Abstract: A method for automatic determination of trends in the graphic analysis of turbomachinery, characterized by understanding the steps of: a) obtaining valid data from sensors installed on the turbomachinery for analysis; b) applying fourth order polynomial regression and evaluating its correlation with the sample; c) calculating the relative variation between the first and last points of the series; d) assessing whether the levels of relative variation and relative correlation exceed a previously pre-established minimum level; d1) displaying a non-existent trend result, if the relative variation or the relative correlation does not exceed the minimum level previously established; e) calculating the trend using the weighted average calculations; f) calculating and classifying the rate of change between consecutive values in the valid data series; g) determining parameters for the rate of change; h) checking if the rate of change parameters meet trend criteria, where: h1) if the rate of change parameters meet tren

Abstract: This invention is related to inspection techniques for composite joints and repairs. In this scenario, this invention provides a system for inspecting a repair or joint made of composite material applied to a structure, comprising at least one element that excites or is excited (2, 10) by a thermal and/or vibrational stimulus, with at least one exciter or excitable (2, 10) element being embedded in the repair (1) or joint.

Abstract: A method with a circuit that includes a memory (130) coupled to an analog line coverage circuit (104). The analog line coverage circuit includes a plurality of buffers (151-154) in which each buffer is coupled to one memory location of the memory, a plurality of bin cells (161-164) in which each bin cell is coupled to a buffer, a multiplexer (170), each input terminal of which is coupled to a bin cell, and an analog-to-digital converter (180) coupled to the multiplexer and to an output terminal of the analog line coverage circuit. The analog line coverage circuit stores an analog voltage that is representative of a number of occasions that a memory location is accessed, and outputs a signal indicative thereof. A processor (102), coupled to the memory and to the analog line coverage circuit, enables the analog line coverage circuit when the processor is in a debug mode.

Abstract: A testing circuit in an integrated circuit indirectly measures a voltage at a node of other circuitry in the integrated circuit. The testing circuit includes a transistor having a control electrode, a first conducting electrode coupled to a first pad, a second conducting electrode coupled to a terminal of a power supply, and one or more switches for selectively coupling the control electrode to one of the node and a second pad. A method includes determining a relationship between drain current and gate voltage of the transistor when the control electrode is coupled to the second pad. A voltage at the node is determined by relating the current through the first conducting electrode of the transistor when control electrode is coupled to the node.

Abstract: A method with a circuit that includes a memory (130) coupled to an analog line coverage circuit (104). The analog line coverage circuit includes a plurality of buffers (151-154) in which each buffer is coupled to one memory location of the memory, a plurality of bin cells (161-164) in which each bin cell is coupled to a buffer, a multiplexer (170), each input terminal of which is coupled to a bin cell, and an analog-to-digital converter (180) coupled to the multiplexer and to an output terminal of the analog line coverage circuit. The analog line coverage circuit stores an analog voltage that is representative of a number of occasions that a memory location is accessed, and outputs a signal indicative thereof. A processor (102), coupled to the memory and to the analog line coverage circuit, enables the analog line coverage circuit when the processor is in a debug mode.

Abstract: A sense amplifier (100) includes first and second inverters (112 and 113). The first inverter has an input terminal (116) and an OUT_B output node and a first transistor (124). The second inverter (113) has an input terminal (115) and an OUT output node and a second transistor (125). The OUT_B output node of the first inverter is coupled to an input terminal of the second inverter, and the OUT node of the second inverter is coupled to an input terminal of the first inverter. The sense amplifier does not use a reference current; therefore, the sense amplifier does not need a reference current generator. The sense amplifier needs only one enable signal to reset a latch (110) of the sense amplifier. When coupled to a non-volatile memory element, voltages at the output nodes are indicative of a logic level of a bit stored in the non-volatile memory element.

Abstract: A circuit includes a memory (130) coupled to an analog line coverage circuit (104). The analog line coverage circuit includes a plurality of buffers (151-154) in which each buffer is coupled to one memory location of the memory, a plurality of bin cells (161-164) in which each bin cell is coupled to a buffer, a multiplexer (170), each input terminal of which is coupled to a bin cell, and an analog-to-digital converter (180) coupled to the multiplexer and to an output terminal of the analog line coverage circuit. The analog line coverage circuit stores an analog voltage that is representative of a number of occasions that a memory location is accessed, and outputs a signal indicative thereof. A processor (102) is coupled to the memory and to the analog line coverage circuit, and the processor enables the analog line coverage circuit when the processor is in a debug mode.

Abstract: A sense amplifier (100) includes first and second inverters (112 and 113). The first inverter has an input terminal (116) and an OUT_B output node and a first transistor (124). The second inverter (113) has an input terminal (115) and an OUT output node and a second transistor (125). The OUT_B output node of the first inverter is coupled to an input terminal of the second inverter, and the OUT node of the second inverter is coupled to an input terminal of the first inverter. The sense amplifier does not use a reference current; therefore, the sense amplifier does not need a reference current generator. The sense amplifier needs only one enable signal to reset a latch (110) of the sense amplifier. When coupled to a non-volatile memory element, voltages at the output nodes are indicative of a logic level of a bit stored in the non-volatile memory element.

Abstract: A testing circuit (100) in an integrated circuit (102) indirectly measures a voltage at a node of other circuitry (104) in the integrated circuit. The testing circuit includes a transistor (120) having a control electrode (121), a first conducting electrode (122) coupled to a first pad (150), a second conducting electrode (123) coupled to a terminal of a power supply, and one or more switches (131 and 133) for selectively coupling the control electrode to one of the node and a second pad (140). A method includes determining a relationship between drain current and gate voltage of the transistor when the control electrode is coupled to the second pad. A voltage at the node is determined by relating the current through the first conducting electrode of the transistor when control electrode is coupled to the node.

Abstract: A charge pump circuit (300) includes a charge pump (330), and clocking circuitry that includes a clock generator (310) and a bypass circuit (320). The clocking circuitry generates clock signals and higher frequency alternative clock signals, for driving the charge pump. Upon start-up of the charge pump circuit and depending on a present value of an output voltage of the charge pump, the clocking circuitry couples to the charge pump either the alternative clock signals and not the clock signals, or the clock signals and not the alternative clock signals. Prior to completion of start-up of the charge pump circuit, at least two rows of pump unit cells are driven by a same alternative clock signal, thereby causing a pump unit cell in a row to charge/discharge at a same time as another pump unit cell in another row, thereby decreasing a start-up time of the charge pump circuit.

Abstract: A circuit includes a memory (130) coupled to an analog line coverage circuit (104). The analog line coverage circuit includes a plurality of buffers (151-154) in which each buffer is coupled to one memory location of the memory, a plurality of bin cells (161-164) in which each bin cell is coupled to a buffer, a multiplexer (170), each input terminal of which is coupled to a bin cell, and an analog-to-digital converter (180) coupled to the multiplexer and to an output terminal of the analog line coverage circuit. The analog line coverage circuit stores an analog voltage that is representative of a number of occasions that a memory location is accessed, and outputs a signal indicative thereof. A processor (102) is coupled to the memory and to the analog line coverage circuit, and the processor enables the analog line coverage circuit when the processor is in a debug mode.

Abstract: A charge pump circuit (300) includes a charge pump (330), and clocking circuitry that includes a clock generator (310) and a bypass circuit (320). The clocking circuitry generates clock signals and higher frequency alternative clock signals, for driving the charge pump. Upon start-up of the charge pump circuit and depending on a present value of an output voltage of the charge pump, the clocking circuitry couples to the charge pump either the alternative clock signals and not the clock signals, or the clock signals and not the alternative clock signals. Prior to completion of start-up of the charge pump circuit, at least two rows of pump unit cells are driven by a same alternative clock signal, thereby causing a pump unit cell in a row to charge/discharge at a same time as another pump unit cell in another row, thereby decreasing a start-up time of the charge pump circuit.

Abstract: A charge pump system (100) includes a charge pump (102), and a regulator (101) that includes a clock generator (120) for providing a clock signal, a control logic (130) coupled to the clock generator, and a comparator (140) coupled to an output of the charge pump. The comparator includes a plurality of interleaved latches (211, 212, 213 and 214) driven by a single differential (203) stage that compares the output voltage and a reference voltage. The control logic provides timing signals to cause each latch to perform a latch action at different points in time within each period of the clock signal, each point in time equally spaced apart. An output from each latch is coupled to an output stage (205). An output signal from the output stage regulates an output voltage from the charge pump. In one embodiment, the charge pump is coupled to a flash memory (190).

Abstract: A charge pump system (100) includes a charge pump (102), and a regulator (101) that includes a clock generator (120) for providing a clock signal, a control logic (130) coupled to the clock generator, and a comparator (140) coupled to an output of the charge pump. The comparator includes a plurality of interleaved latches (211, 212, 213 and 214) driven by a single differential (203) stage that compares the output voltage and a reference voltage. The control logic provides timing signals to cause each latch to perform a latch action at different points in time within each period of the clock signal, each point in time equally spaced apart. An output from each latch is coupled to an output stage (205). An output signal from the output stage regulates an output voltage from the charge pump. In one embodiment, the charge pump is coupled to a flash memory (190).