Patents by Inventor Filbert J. Bartoli, Jr.

Filbert J. Bartoli, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optical limiter structure and method
    Patent number: 5805326
    Abstract: An optical limiter structure which includes a limiter material preferably dissolved in a host. The limiter material is selected from substituted and unsubstituted phthalocyanines, naphthalocyanines, porphyrins, salts of these materials and mixtures thereof, whereas the host is selected from any material which can dissolve the limiter material to at least the extent of 0.1% by weight.
    Type: Grant
    Filed: May 6, 1994
    Date of Patent: September 8, 1998
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Arthur W. Snow, James S. Shirk, Filbert J. Bartoli, Jr., James R. Lindle, Michael E. Boyle, Richard G. S. Pong, Steven R. Flom, Joseph F. Pinto
  • Method of forming an interband lateral resonant tunneling transistor
    Patent number: 5804475
    Abstract: This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices.
    Type: Grant
    Filed: June 19, 1996
    Date of Patent: September 8, 1998
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Jerry R. Meyer, Craig A. Hoffman, Filbert J. Bartoli, Jr.
  • Method of forming an interband lateral resonant tunneling transistor with single narrow gate electrode
    Patent number: 5665618
    Abstract: This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices.
    Type: Grant
    Filed: January 27, 1995
    Date of Patent: September 9, 1997
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Jerry R. Meyer, Craig A. Hoffman, Filbert J. Bartoli, Jr.
  • Interband lateral resonant tunneling transistor
    Patent number: 5654558
    Abstract: This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices.
    Type: Grant
    Filed: November 14, 1994
    Date of Patent: August 5, 1997
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Jerry R. Meyer, Craig A. Hoffman, Filbert J. Bartoli, Jr.