Abstract: The disclosed technology generally relates to silicon solar cells and more particularly to a doped layer formed on a textured surface of a silicon solar cell, and methods of fabricating the same. In one aspect, a method of creating a doped layer at a rear side of a crystalline silicon bifacial solar cell is disclosed. The method can include texturing at least a rear side of a silicon substrate of the solar cell to create a pattern of pyramids, thereby creating a pyramidal topology of the rear side. The method can also include forming a doped layer at the rear side by, using epitaxial growth, growing at least one doped silicon epitaxial layer on the pyramids. Simultaneously with forming the doped layer and by using facet evolution, the pyramidal topology of the rear side can be smoothed by the growth of the at least one epitaxial layer.

Abstract: The disclosed technology generally relates to silicon solar cells and more particularly to a doped layer formed on a textured surface of a silicon solar cell, and methods of fabricating the same. In one aspect, a method of creating a doped layer at a rear side of a crystalline silicon bifacial solar cell is disclosed. The method can include texturing at least a rear side of a silicon substrate of the solar cell to create a pattern of pyramids, thereby creating a pyramidal topology of the rear side. The method can also include forming a doped layer at the rear side by, using epitaxial growth, growing at least one doped silicon epitaxial layer on the pyramids. Simultaneously with forming the doped layer and by using facet evolution, the pyramidal topology of the rear side can be smoothed by the growth of the at least one epitaxial layer.

Abstract: A method for fabricating a crystalline semiconductor photovoltaic cell is disclosed. In one aspect, the method includes depositing a dielectric layer at first predetermined locations on a surface of a semiconductor substrate. The method further includes growing a doped epitaxial layer at second predetermined locations on a surface of the semiconductor substrate, the second predetermined locations being different from and non-overlapping with the first predetermined locations. The method further includes maintaining the dielectric layer as a surface passivation layer in the photovoltaic cell. The method also includes forming an emitter region, a back surface field region or a front surface field region of the photovoltaic cell from the doped epitaxial layer.

Abstract: A method for forming an emitter structure on a substrate and emitter structures resulting therefrom is disclosed. In one aspect, a method includes forming, on the substrate, a first layer comprising semiconductor material. The method also includes texturing a surface of the first layer, thereby forming a first emitter region from the first layer, wherein the first emitter region has a first textured surface. The method also includes forming a second emitter region at the first textured surface, the second emitter region having a second textured surface.

Abstract: A method for forming an emitter structure on a substrate and emitter structures resulting therefrom is disclosed. In one aspect, a method includes forming, on the substrate, a first layer comprising semiconductor material. The method also includes texturing a surface of the first layer, thereby forming a first emitter region from the first layer, wherein the first emitter region has a first textured surface. The method also includes forming a second emitter region at the first textured surface, the second emitter region having a second textured surface.