Abstract: An acoustic wave device is provided that includes a support substrate, a piezoelectric layer on the support substrate, and an interdigital transducer electrode. A ratio d/p is less than or equal to approximately 0.5, where d is a thickness of the piezoelectric layer and p is a distance between centers of adjacent electrode fingers of the multiple electrode fingers. The interdigital transducer electrode includes an intersection region in which the adjacent electrode fingers overlap when viewed in a direction in which multiple electrode fingers face each other. Moreover, two gap regions are located between the intersection region and a corresponding one of the two busbars and includes an I-B gap that is a dimension in a direction in which the multiple electrode fingers extend. The I-B gap of at least one of the two gap regions is less than or equal to about 1.1p.

Abstract: An acoustic resonator has a piezoelectric plate attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) formed on the plate has interleaved fingers on the diaphragm with first parallel fingers extending from a first busbar and second parallel fingers extending from a second busbar of the IDT. An average center-to-center distance between adjacent interleaved fingers defines an IDT pitch. The IDT has a gap distance between the ends of the first plurality of parallel fingers and the second busbar, and between the ends of the second plurality of parallel fingers and the first busbar; and the gap distance is less than ? times the IDT pitch.

Abstract: Acoustic resonators, filters, and methods. An acoustic resonator includes a substrate, piezoelectric plate, and a diaphragm comprising a portion of the piezoelectric plate spanning a cavity in a substrate. An interdigital transducer (IDT) on a front surface of the piezoelectric plate includes first and second sets of interleaved interdigital transducer (IDT) fingers extending from first and second busbars respectively. The interleaved IDT fingers are on the diaphragm. Overlapping portions of the interleaved IDT fingers define an aperture of the acoustic resonator. A first dielectric strip overlaps the IDT fingers in a first margin of the aperture and extends into a first gap between the first margin and the first busbar. A second dielectric strip overlaps the IDT fingers in a second margin of the aperture and extends into a second gap between the second margin and the second busbar.

Abstract: An acoustic resonator has a piezoelectric plate attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) formed on the plate has interleaved fingers on the diaphragm with first parallel fingers extending from a first busbar and second parallel fingers extending from a second busbar of the IDT. A distance between the interleaved fingers defines an IDT pitch. The IDT has a gap distance between the ends of the first plurality of parallel fingers and the second busbar, and between the ends of the second plurality of parallel fingers and the first busbar; and the gap distance is less than ? times the IDT pitch.

Abstract: Acoustic resonators, acoustic filter devices and methods of making the same. An acoustic resonator device includes a piezoelectric plate having front and back surfaces, an interdigital transducer (IDT) on the front surface including interleaved fingers extending alternately from opposed first and second busbars, an overlapping distance of the interleaved fingers defining an aperture of the acoustic resonator device, and a dielectric layer formed over and between the interleaved fingers, wherein the dielectric layer extends from between an edge of the aperture and the first busbar to between the an opposite edge of the aperture and the second busbar.

Abstract: Surface acoustic wave (SAW) resonator, SAW filters, and methods of fabricating SAW filters. A first plurality of parallel conductors extending from a first bus bar are formed on a surface of a 128-degree Y-cut lithium niobate substrate. A second plurality of parallel conductors extending from a second bus bar are formed on the surface of the substrate, the second plurality of parallel conductors interleaved with the first plurality of parallel conductors. An SiO2 layer overlays the first and second pluralities of parallel conductors. The first and second pluralities of parallel conductors are substantially copper and have a thickness DCU defined by 0.12P?DCU?0.24P, where P is a center-to-center spacing of adjacent parallel conductors. The SiO2 layer has a thickness DOX defined by 3.1DCU?DOX?4.5DCU.

Abstract: Surface acoustic wave (SAW) resonator, SAW filters, and methods of fabricating SAW filters. A first plurality of parallel conductors extending from a first bus bar are formed on a surface of a 128-degree Y-cut lithium niobate substrate. A second plurality of parallel conductors extending from a second bus bar are formed on the surface of the substrate, the second plurality of parallel conductors interleaved with the first plurality of parallel conductors. An SiO2 layer overlays the first and second pluralities of parallel conductors. The first and second pluralities of parallel conductors are substantially copper and have a thickness DCU defined by 0.12 P?DCU?0.24P, where P is a center-to-center spacing of adjacent parallel conductors. The SiO2 layer has a thickness DOX defined by 3.1DCU?DOX?4.5DCU.