Abstract: An integrated circuit having a connection terminal for receiving an electric data carrying signal, a circuit for delivering a first clock signal having clock pulses sent after each falling edge of the electric data carrying signal and inside a data sampling window, a circuit for delivering a second clock signal having clock pulses sent only when the electric data carrying signal is at the high level, and a data processing circuit clocked by the second clock signal.

Abstract: An integrated circuit having a connection terminal for receiving an electric data carrying signal, a circuit for delivering a first clock signal having clock pulses sent after each falling edge of the electric data carrying signal and inside a data sampling window, a circuit for delivering a second clock signal having clock pulses sent only when the electric data carrying signal is at the high level, and a data processing circuit clocked by the second clock signal.

Abstract: An electrically erasable and programmable memory includes an array of memory cells, and a distribution line linked to a receiving terminal of an external supply voltage and to a booster circuit. The distribution line provides an internal supply voltage. The distribution line is also linked to the receiving terminal through a diode or a diode circuit simulating operation of a diode. The memory includes a regulator for triggering the booster circuit when the internal supply voltage becomes lower than a threshold so as to maintain the internal supply voltage close to the threshold when the external supply voltage is too low, at least during the reading of memory cells. The diode or the diode circuit is blocked when the external supply voltage is too low.

Abstract: A comparator compares a first voltage applied to a first input to a second voltage applied to a second input. The comparator delivers an output signal having a first value when the second voltage is higher than the first voltage, and having a second value when the second voltage is lower than the first voltage. The comparator includes first and second PMOS transistors arranged as current mirrors. The first PMOS transistor has its source connected to the first input of the comparator for receiving the first voltage. The second PMOS transistor has its source connected to the second input of the comparator for receiving the second voltage. The output of the comparator is connected to the drain of one of the transistors.

Abstract: A comparator compares a first voltage applied to a first input to a second voltage applied to a second input. The comparator delivers an output signal having a first value when the second voltage is higher than the first voltage, and having a second value when the second voltage is lower than the first voltage. The comparator includes first and second PMOS transistors arranged as current mirrors. The first PMOS transistor has its source connected to the first input of the comparator for receiving the first voltage. The second PMOS transistor has its source connected to the second input of the comparator for receiving the second voltage. The output of the comparator is connected to the drain of one of the transistors.

Abstract: An electrically erasable and programmable memory includes an array of memory cells, and a distribution line linked to a receiving terminal of an external supply voltage and to a booster circuit. The distribution line provides an internal supply voltage. The distribution line is also linked to the receiving terminal through a diode or a diode circuit simulating operation of a diode. The memory includes a regulator for triggering the booster circuit when the internal supply voltage becomes lower than a threshold so as to maintain the internal supply voltage close to the threshold when the external supply voltage is too low, at least during the reading of memory cells. The diode or the diode circuit is blocked when the external supply voltage is too low.