Abstract: An analog front-end architecture for a capacitive pressure sensor with a low-noise amplifier unit for amplification of sensor signals from the sensor. The amplifier unit includes first and second integrator units for integrating charges injected into input terminals of the amplifier unit and for outputting integrated charges to output terminals of the amplifier unit, a feedback unit, and a startup unit. The feedback unit reinjects integrated charges from the integrator unit into the input terminals of the amplifier unit. The startup unit is switchable between first and second switching states and is configured, in the first switching state, to route the charges injected into the input terminals past the first integrator unit into the second integrator unit and from the second integrator unit into the feedback unit, and, in the second switching state, to route charges injected into the input terminals directly into the first integrator unit.

Abstract: Provided herein are certain compounds and imaging agents useful for detecting a disease or condition associated with protein aggregation, compositions thereof, and methods of their use.

Abstract: An analog frontend architecture for a capacitive pressure sensor. The analog frontend architecture includes a low-noise amplifier unit for low-noise amplification of sensor signals of the capacitive pressure sensor, the low-noise amplifier unit including a first integrator unit and a second integrator unit, the first integrator unit being connected to input terminals of the low-noise amplifier unit, being designed as a boxcar integrator, and being configured to amplify sensor signals of the capacitive pressure sensor according to the boxcar integration technique, and the second integrator unit being connected to output terminals of the low-noise amplifier unit and being configured to integrate the amplified voltage signals of the first integrator unit.

Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane, provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane, provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane, provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane, provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

Abstract: Various embodiments of the invention allow to reduce unwanted high-Q oscillations in capacitive MEMS sensors. In certain embodiments, stabilization of high-Q MEMS sensors is accomplished through a dedicated ultra-low power circuit that provides a bias voltage to one or more sensor electrodes during an OFF-phase. The bias voltage forces a balance condition that eliminates perturbations and enables smooth transitions that, ultimately, result in shorter sensor settling times.

Abstract: Described herein is a preamplifier circuit for a capacitive acoustic transducer provided with a MEMS detection structure that generates a capacitive variation as a function of an acoustic signal to be detected, starting from a capacitance at rest; the preamplifier circuit is provided with an amplification stage that generates a differential output signal correlated to the capacitive variation. In particular, the amplification stage is an input stage of the preamplifier circuit and has a fully differential amplifier having a first differential input (INP) directly connected to the MEMS detection structure and a second differential input (INN) connected to a reference capacitive element, which has a value of capacitance equal to the capacitance at rest of the MEMS detection structure and fixed with respect to the acoustic signal to be detected; the fully differential amplifier amplifies the capacitive variation and generates the differential output signal.

Abstract: Described herein is a preamplifier circuit for a capacitive acoustic transducer provided with a MEMS detection structure that generates a capacitive variation as a function of an acoustic signal to be detected, starting from a capacitance at rest; the preamplifier circuit is provided with an amplification stage that generates a differential output signal correlated to the capacitive variation. In particular, the amplification stage is an input stage of the preamplifier circuit and has a fully differential amplifier having a first differential input (INP) directly connected to the MEMS detection structure and a second differential input (INN) connected to a reference capacitive element, which has a value of capacitance equal to the capacitance at rest of the MEMS detection structure and fixed with respect to the acoustic signal to be detected; the fully differential amplifier amplifies the capacitive variation and generates the differential output signal.

Abstract: The present disclosure is directed to an acoustic transducer configured to detect a sound wave according to changes in capacitances between a vibrating electrode and a fixed electrode. At least one of the vibrating electrode and the fixed electrode being divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting electrical signals. The disclosure includes a digital interface circuit coupled to the divided electrodes. The circuit includes a recombination stage, which supplies a mixed signal by combining the first digital processed signal and the second digital processed signal with a respective weight that is a function of a first level value of the first processed signal. An output stage is included, which supplies, selectively and alternatively, a first processed signal, a second processed signal, or a mixed signal.

Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

Abstract: Described herein is a preamplifier circuit for a capacitive acoustic transducer provided with a MEMS detection structure that generates a capacitive variation as a function of an acoustic signal to be detected, starting from a capacitance at rest; the preamplifier circuit is provided with an amplification stage that generates a differential output signal correlated to the capacitive variation. In particular, the amplification stage is an input stage of the preamplifier circuit and has a fully differential amplifier having a first differential input (INP) directly connected to the MEMS detection structure and a second differential input (INN) connected to a reference capacitive element, which has a value of capacitance equal to the capacitance at rest of the MEMS detection structure and fixed with respect to the acoustic signal to be detected; the fully differential amplifier amplifies the capacitive variation and generates the differential output signal.

Abstract: A biasing circuit for an acoustic transducer is provided with: a voltage-booster stage, which supplies, on a biasing terminal, a boosted voltage for biasing a first terminal of the acoustic transducer; and filtering elements, set between the biasing terminal and the acoustic transducer, for filtering disturbances on the boosted voltage. The biasing circuit is further provided with switches, which can be actuated so as to connect the first terminal to the biasing terminal of the voltage-booster stage, directly during a start-up step of the biasing circuit, and through the filtering elements at the end of the start-up step.

Abstract: A MEMS transducer has a micromechanical sensing structure and a package. The package is provided with a substrate, carrying first electrical-connection elements, and with a lid, coupled to the substrate to define an internal cavity, in which the micromechanical sensing structure is housed. The lid is formed by: a cap layer having a first surface and a second surface, set opposite to one another, the first surface defining an external face of the package and the second surface facing the substrate inside the package; and a wall structure, set between the cap layer and the substrate, and having a coupling face coupled to the substrate. At least a first electrical component is coupled to the second surface of the cap layer, inside the package, and the coupling face of the wall structure carries second electrical-connection elements, electrically connected to the first electrical component and to the first electrical-connection elements.

Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane, provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane, provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

Abstract: Described herein is a preamplifier circuit for a capacitive acoustic transducer provided with a MEMS detection structure that generates a capacitive variation as a function of an acoustic signal to be detected, starting from a capacitance at rest; the preamplifier circuit is provided with an amplification stage that generates a differential output signal correlated to the capacitive variation. In particular, the amplification stage is an input stage of the preamplifier circuit and has a fully differential amplifier having a first differential input (INP) directly connected to the MEMS detection structure and a second differential input (INN) connected to a reference capacitive element, which has a value of capacitance equal to the capacitance at rest of the MEMS detection structure and fixed with respect to the acoustic signal to be detected; the fully differential amplifier amplifies the capacitive variation and generates the differential output signal.