Abstract: The present invention concerns an anti-tearing protection system (1) for a non-volatile memory (3) comprising a first memory block (5) and a second memory block (7), the first and second memory blocks (5, 7) being arranged to store a data set comprising user data and an error detection code obtained based on the user data. The first and second memory blocks (5, 7) can be read in a first read mode for determining logic states of data elements comprised in the data set according to the first read mode. The user data in a respective memory block are considered to be correct according to the first read mode if its error detection code equals a first given value. The first and second memory blocks (5, 7) can further be read in a second read mode for determining the logic states of the data elements comprised in data set according to the second read mode.

Abstract: The present invention concerns an anti-tearing protection system (1) for a non-volatile memory (3) comprising a first memory block (5) and a second memory block (7), the first and second memory blocks (5, 7) being arranged to store a data set comprising user data and an error detection code obtained based on the user data. The first and second memory blocks (5, 7) can be read in a first read mode for determining logic states of data elements comprised in the data set according to the first read mode. The user data in a respective memory block are considered to be correct according to the first read mode if its error detection code equals a first given value. The first and second memory blocks (5, 7) can further be read in a second read mode for determining the logic states of the data elements comprised in data set according to the second read mode.

Abstract: The present invention relates to a regulation circuit for a charge pump and to a method of regulating a charge pump. The regulation circuit comprises a detector operable to analyze a temporal activity of the charge pump, and a pump clock generator coupled to an output of the detector and having an output coupled to a clock input of the charge pump to vary a pump clock frequency of the charge pump in dependence of the analysis of the detector, or a supply or voltage generator coupled to an output of the detector and having an output coupled to the charge pump to vary an amplitude of a clock signal within the charge pump in dependence of the analysis of the detector.

Abstract: The present invention relates to a regulation circuit for a charge pump and to a method of regulating a charge pump. The regulation circuit comprises a detector operable to analyze a temporal activity of the charge pump, and a pump clock generator coupled to an output of the detector and having an output coupled to a clock input of the charge pump to vary a pump clock frequency of the charge pump in dependence of the analysis of the detector, or a supply or voltage generator coupled to an output of the detector and having an output coupled to the charge pump to vary an amplitude of a clock signal within the charge pump in dependence of the analysis of the detector.

Abstract: The present invention relates to a regulation circuit for a charge pump and to a method of regulating a charge pump. The regulation circuit comprises a detector operable to analyze a temporal activity of the charge pump, and a pump clock generator coupled to an output of the detector and having an output coupled to a clock input of the charge pump to vary a pump clock frequency of the charge pump in dependence of the analysis of the detector, or a supply or voltage generator coupled to an output of the detector and having an output coupled to the charge pump to vary an amplitude of a clock signal within the charge pump in dependence of the analysis of the detector.

Abstract: The electronic memory device comprises a non-volatile memory matrix organized in rows and columns, an address decoder with address input lines for selecting a row according to a particular address given on the address input lines. Additional address mask input lines are provided, each address mask input line being assigned to an address input line, wherein an address mask input line in activated state has the effect of ignoring the assigned address input line. The method for testing said electronic memory device is performed with a significant lower number of read/write operations, since by ignoring a particular address line a plurality of write operations can be performed simultaneously.

Abstract: A memory circuit is provided, including at least one bit cell configured to store data and having a first terminal and a second terminal, one of the terminals being coupled to a bit-line; at least one current switch connected to the bit-line and connected to a current source and being configured to selectively provide at least a read current to the bit cell; and a sense amplifier having at least one input connected to a sensing node on the bit-line, wherein the sensing node is disposed between the bit cell and the at least one current switch.

Abstract: The present invention relates to a memory circuit comprising: at least one bit cell for storing data and having a first terminal and a second terminal, wherein one of said terminals is coupled to a bit-line, at least one current switch connected to the bit-line and connected to a current source and being operable to selectively provide a current to the bit cell, a sense amplifier having at least one input connected to a sensing node on the bit-line, wherein the sensing node is located between the bit cell and the at least one current switch.

Abstract: The electronic memory device comprises a non-volatile memory matrix organized in rows and columns, an address decoder with address input lines for selecting a row according to a particular address given on the address input lines. Additional address mask input lines are provided, each address mask input line being assigned to an address input line, wherein an address mask input line in activated state has the effect of ignoring the assigned address input line. The method for testing said electronic memory device is performed with a significant lower number of read/write operations, since by ignoring a particular address line a plurality of write operations can be performed simultaneously.

Abstract: The present invention relates to a voltage regulator and to a method of operating a voltage regulator that is operable in a reset mode and in a sampling mode. The voltage regulator comprises a capacitive voltage divider having a first capacitor and a second capacitor in series with the first capacitor, wherein the capacitive voltage divider is connectable to an output of a voltage supply to activate the sampling mode, a comparator having an output connected to an input of the voltage supply, the comparator further having a first input connected to a sampling node arranged between the first capacitor and the second capacitor and the comparator having a second input connected to a reference voltage, wherein the sampling node is connectable to the reference voltage for activating the reset mode.

Abstract: The present invention relates to a regulation circuit for a charge pump and to a method of regulating a charge pump. The regulation circuit comprises a detector operable to analyze a temporal activity of the charge pump, and a pump clock generator coupled to an output of the detector and having an output coupled to a clock input of the charge pump to vary a pump clock frequency of the charge pump in dependence of the analysis of the detector, or a supply or voltage generator coupled to an output of the detector and having an output coupled to the charge pump to vary an amplitude of a clock signal within the charge pump in dependence of the analysis of the detector.

Abstract: The present invention relates to a voltage regulator and to a method of operating a voltage regulator that is operable in a reset mode and in a sampling mode. The voltage regulator comprises: a capacitive voltage divider having a first capacitor and a second capacitor in series with the first capacitor, wherein the capacitive voltage divider is connectable to an output of a voltage supply to activate the sampling mode, a comparator having an output connected to an input of the voltage supply, the comparator further having a first input connected to a sampling node arranged between the first capacitor and the second capacitor and the comparator having a second input connected to a reference voltage, wherein the sampling node is connectable to the reference voltage for activating the reset mode.

Abstract: The self-powered detection device comprises a Non-Volatile Memory (NVM) unit formed by at least a NVM cell and a sensor activated by a physical or chemical action or phenomenon, the NVM unit arranged for storing in the NVM cell, by using electrical power of the electrical stimulus pulse, a bit of information relative to detection by the sensor, during a detection mode of the self-powered detection device, of at least one physical or chemical action or phenomenon applied to it with at least a given strength or intensity and resulting in a voltage stimulus signal provided between a set control terminal and a base terminal of the NVM unit with at least a given set voltage.

Abstract: The self-powered detection device comprises a non-volatile memory cell and a sensor activated by a physical or chemical action or phenomenon, this sensor forming an energy harvester transforming energy from the physical or chemical action orphenomenon into an electrical stimulus pulse, the memory cell arranged for storing, by using electrical power of the electrical stimulus pulse, at least a bit of information relative to detection by the sensor of at least a first physical or chemical action or phenomenon. The non-volatile memory cell comprises a FET transistor having a control gate, a first diffusion defining a first input and a second diffusion defining a second input. This FET transistor is set to its written logical state from its initial logical state when, in a detection mode, it receives on a set terminal a voltage stimulus signal resulting from the first physical or chemical action or phenomenon.

Abstract: The self-powered detection device comprises at least a non-volatile memory cell (24) and a sensor (16) which is activated by a physical or chemical action or phenomenon, this sensor forming an energy harvester that transforms energy from said physical or chemical action or phenomenon into an electrical stimulus pulse, the memory cell being arranged for storing, by using the electrical power of said electrical stimulus pulse, at least a bit of information relative to the detection by the sensor of at least a first physical or chemical action or phenomenon applied to it with at least a given strength or intensity. The non-volatile memory cell is formed by a FET transistor (T1) having a control gate, a first diffusion (DRN) defining a first input and a second diffusion (SRC) defining a second input.

Abstract: The self-powered detection device comprises a Non-Volatile Memory (NVM) unit (52) formed by at least a NVM cell and a sensor which is activated by a physical or chemical action or phenomenon, the NVM unit being arranged for storing in said NVM cell, by using the electrical power of said electrical stimulus pulse, a bit of information relative to the detection by said sensor, during a detection mode of the self-powered detection device, of at least one physical or chemical action or phenomenon applied to it with at least a given strength or intensity and resulting in a voltage stimulus signal provided between a set control terminal (SET) and a base terminal (SET *) of the NVM unit with at least a given set voltage.

Abstract: The external event detection device comprises an electronic unit (22) and an external event sensor (16), the electronic unit having at least a non-volatile memory cell (24, T1) in which data relative to at least one external event detected by the external event sensor can be stored. According to the invention, the external event sensor defines an energy harvester that transforms energy from said at least one external event into electrical energy contained in an electrical stimulus pulse provided to the electronic unit. The electronic unit is arranged for storing said data by using only the electrical energy contained in the electrical stimulus pulse. In particular, the non-volatile memory cell is directly set to its written logical state from its initial logical state by the electrical stimulus pulse provided by said energy harvester.

Abstract: There is disclosed an array (10) of split-gate non-volatile memory cells (24) supplied with power at a low voltage (VDD) by a power supply (30), said cells being arranged in one or more rows and columns and electrically interconnected in groups to form one or more pages (12). The array comprises control logic (32) delivering a defined programming voltage (VPROG) that is close or or substantially equal to the low power supply voltage that is applied to a control gate (245) of at least one cell (24A) that is to be programmed via a word control line (18) corresponding to that cell and blocking logic (36) delivering a first blocking voltage (VBLOC1) that is greater than said low power supply voltage and is applied to the first regions (241) of the cells (24B) sharing the same word control line (18) as said cell that is to be programmed via a bit control line (22) corresponding to those cells.