Abstract: A charge detection apparatus may include a radiation sensor having a first electrode and a second electrode for collecting charges of opposite sign and configured to supply to a collecting terminal, connected to the first electrode, a charge signal proportional to an incident radiation. The radiation sensor may define a sensor capacitance associated with the first and the second electrode. The device may also include a charge preamplifier, configured to receive the charge signal and convert it into an electrical output signal, and including an amplifier having a first output terminal. An electrical connection may be included between the first output terminal and the second electrode configured so that the sensor capacitance is in feedback for the amplifier.

Abstract: It is described a charge preamplifier device (100) integrated in a chip (200) of semiconductive material comprising: an input (IN) for an input signal (iIN) and an output (OUT) for an output signal (vOUT); a substrate (202) of semiconductive material doped according to a first type of conductivity; an electrically insulating layer (204) placed on said substrate (202); a feedback capacitor (Cf) integrated in the chip (200) and comprising a first electrode (3) connected to the input (IN) and a second electrode (2) connected to the output (OUT). The second electrode (2) is formed by a doped conductive region (205) having a second type of conductivity, opposite to the first type of conductivity, and integrated in the substrate (202) in order to face the first electrode (3).

Abstract: It is described a charge preamplifier device (100) integrated in a chip (200) of semiconductive material comprising: an input (IN) for an input signal (iIN) and an output (OUT) for an output signal (vOUT); a substrate (202) of semiconductive material doped according to a first type of conductivity; an electrically insulating layer (204) placed on said substrate (202); a feedback capacitor (Cf) integrated in the chip (200) and comprising a first electrode (3) connected to the input (IN) and a second electrode (2) connected to the output (OUT). The second electrode (2) is formed by a doped conductive region (205) having a second type of conductivity, opposite to the first type of conductivity, and integrated in the substrate (202) in order to face the first electrode (3).