Patents by Inventor Firooz Faili

Firooz Faili has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture
    Patent number: 9359693
    Abstract: A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: June 7, 2016
    Assignee: ELEMENT SIX TECHNOLOGIES US CORPORATION
    Inventors: Daniel Francis, Firooz Faili, Kristopher Matthews, Frank Yantis Lowe, Quentin Diduck, Sergey Zaytsev, Felix Ejeckam
  • Gallium—nitride-on-diamond wafers and devices, and methods of manufacture
    Patent number: 8674405
    Abstract: Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: March 18, 2014
    Assignee: Element Six Technologies US Corporation
    Inventors: Dubravko Babić, Firooz Faili, Daniel Francis, Quentin Diduck, Felix Ejeckam
  • Gallium-Nitride-On-Diamond Wafers and Manufacturing Equipment and Methods of Manufacture
    Publication number: 20130298823
    Abstract: A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
    Type: Application
    Filed: February 28, 2013
    Publication date: November 14, 2013
    Inventors: Daniel Francis, Firooz Faili, Kristopher Matthews, Frank Yantis Lowe, Quentin Diduck, Sergey Zaytsev, Felix Ejeckam
  • Composite wafers having bulk-quality semiconductor layers and method of manufacturing thereof
    Patent number: 7943485
    Abstract: Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.
    Type: Grant
    Filed: January 22, 2008
    Date of Patent: May 17, 2011
    Assignee: Group4 Labs, LLC
    Inventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Firooz Faili, Dubravko Babic
  • COMPOSITE WAFERS HAVING BULK-QUALITY SEMICONDUCTOR LAYERS AND METHOD OF MANUFACTURING THEREOF
    Publication number: 20080296586
    Abstract: Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.
    Type: Application
    Filed: January 22, 2008
    Publication date: December 4, 2008
    Inventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Firooz Faili, Dubravko Babic