Patents by Inventor Fish Ren

Fish Ren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and structure for top metal formation of liquid crystal on silicon devices
    Patent number: 8339553
    Abstract: The present invention provides an LCOS device having improved bonding pad features. The device has a substrate, a transistor layer overlying the substrate and an interlayer dielectric layer overlying the transistor layer. A first conductive layer is overlying the interlayer dielectric layer and a second interlayer dielectric layer is overlying the first conductive layer. An enlarged opening for a bonding pad structure is in a first portion of the second interlayer dielectric layer. A barrier metal layer is formed within the enlarged opening to form a liner that covers exposed regions of the enlarged opening. A metal material is overlying the liner to fill the enlarged opening. A thickness of an aluminum material is overlying the metal material. The device has a bonding pad structure formed from a first portion of the thickness of the aluminum material and is coupled to the metal material in the enlarged opening.
    Type: Grant
    Filed: October 4, 2010
    Date of Patent: December 25, 2012
    Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Herb Huang, Wei Min Li, Fish Ren, Nancy Han
  • METHOD AND STRUCTURE FOR TOP METAL FORMATION OF LIQUID CRYSTAL ON SILICON DEVICES
    Publication number: 20120092604
    Abstract: The present invention provides an LCOS device having improved bonding pad features. The device has a substrate, a transistor layer overlying the substrate and an interlayer dielectric layer overlying the transistor layer. A first conductive layer is overlying the interlayer dielectric layer and a second interlayer dielectric layer is overlying the first conductive layer. An enlarged opening for a bonding pad structure is in a first portion of the second interlayer dielectric layer. A barrier metal layer is formed within the enlarged opening to form a liner that covers exposed regions of the enlarged opening. A metal material is overlying the liner to fill the enlarged opening. A thickness of an aluminum material is overlying the metal material. The device has a bonding pad structure formed from a first portion of the thickness of the aluminum material and is coupled to the metal material in the enlarged opening.
    Type: Application
    Filed: October 4, 2010
    Publication date: April 19, 2012
    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: HERB HUANG, Wei Min Li, Fish Ren, Nancy Han