Patents by Inventor Flavia PIEGAS LUCE

Flavia PIEGAS LUCE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a transistor having a source and a drain obtained by recrystallization of semiconductor
    Patent number: 10170621
    Abstract: Method of making a transistor, comprising the following steps: make a gate and a first spacer on a first channel region of a first crystalline semiconducting layer; make first crystalline semiconductor portions on the second source and drain regions; make the second regions amorphous and dope them; recrystallise the second regions and activate the dopants present in the second regions; remove the first portions; make a second spacer thicker than the first spacer; make second doped crystalline semiconductor portions on the second regions, said second portions and the second regions of the first layer together form the source and drain of the transistor.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: January 1, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Shay Reboh, Perrine Batude, Flavia Piegas Luce
  • METHOD OF ELIMINATING FAULTS IN A SEMICONDUCTOR FILM COMPRISING THE FORMATION OF A HYDROGEN TRAPPING LAYER
    Publication number: 20180315644
    Abstract: The invention relates to a method of treating a thin film transferred from a donor substrate to a receiver substrate by fracture at the level of a zone of the donor substrate which is made fragile by hydrogen ion implantation. The method includes a step of thinning the transferred thin film so as to eliminate a region of residual defects induced by the hydrogen ion implantation. The method also includes, directly after the fracture and before the step of thinning of the transferred thin film, a step of forming a hydrogen trapping layer in the region of residual defects of the transferred thin film. A thermal processing may be implemented after formation of the hydrogen trapping layer and before thinning of the thin film.
    Type: Application
    Filed: October 28, 2016
    Publication date: November 1, 2018
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Aurelie TAUZIN, Emmanuelle LAGOUTTE, Frederic MAZEN, Flavia PIEGAS LUCE, Shay REBOH
  • METHOD OF MAKING A TRANSISTOR HAVING A SOURCE AND A DRAIN OBTAINED BY RECRYSTALLIZATION OF SEMICONDUCTOR
    Publication number: 20170345931
    Abstract: Method of making a transistor, comprising the following steps: make a gate and a first spacer on a first channel region of a first crystalline semiconducting layer; make first crystalline semiconductor portions on the second source and drain regions; make the second regions amorphous and dope them; recrystallise the second regions and activate the dopants present in the second regions; remove the first portions; make a second spacer thicker than the first spacer; make second doped crystalline semiconductor portions on the second regions, said second portions and the second regions of the first layer together form the source and drain of the transistor.
    Type: Application
    Filed: May 23, 2017
    Publication date: November 30, 2017
    Inventors: Shay REBOH, Perrine BATUDE, Flavia PIEGAS LUCE