Patents by Inventor Flavien Hirigoyen
Flavien Hirigoyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10388686Abstract: A image sensor includes a semiconductor substrate with a photosensitive region. Metallization layers are stacked over the semiconductor substrate. Each metallization layer includes an etch stop layer and a dielectric layer on the etch stop layer. At least one metallization layer includes one or more microlenses positioned over the photosensitive region. The one or more microlenses are integrally formed by the etch stop layer.Type: GrantFiled: November 21, 2016Date of Patent: August 20, 2019Assignee: STMicroelectronics (Grenoble 2) SASInventor: Flavien Hirigoyen
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Publication number: 20180145103Abstract: A image sensor includes a semiconductor substrate with a photosensitive region. Metallization layers are stacked over the semiconductor substrate. Each metallization layer includes an etch stop layer and a dielectric layer on the etch stop layer. At least one metallization layer includes one or more microlenses positioned over the photosensitive region. The one or more microlenses are integrally formed by the etch stop layer.Type: ApplicationFiled: November 21, 2016Publication date: May 24, 2018Applicant: STMicroelectronics (Grenoble 2) SASInventor: Flavien Hirigoyen
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Patent number: 9865636Abstract: A method of simultaneously manufacturing First and second pixels respectively shielded on a first and on a second side are simultaneously manufactured using a process wherein a first insulator is deposited on an active area. A first metal level is deposited and defined, with a first mask, to form a shield on the first side of the first pixel and on the second side of the second pixel, and a line opposite to the shield. A second insulator is deposited, and via openings therein are defined, with a second mask. An overlying second metal level is deposited and defined, with a third mask, to form two connection areas covering the via openings on each side of the first and second pixels. The second and third masks are identical for the first and second pixels.Type: GrantFiled: October 11, 2016Date of Patent: January 9, 2018Assignee: STMicroelectronics (Grenoble 2) SASInventors: Flavien Hirigoyen, Emilie Huss
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Patent number: 9728659Abstract: A Single-Photon Avalanche Diode (SPAD) device an active region configured to detect incident radiation, a first radiation blocking ring surrounding the active region, and a radiation blocking cover configured to shield part of the active region from the incident radiation. The radiation blocking cover is configured to define a second radiation blocking ring vertically spaced apart from the first radiation blocking ring. The SPAD device may include radiation blocking vias extending between the first and second radiation blocking rings.Type: GrantFiled: September 30, 2015Date of Patent: August 8, 2017Assignees: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED, STMICROELECTRONICS (GRENOBLE 2) SASInventors: Flavien Hirigoyen, Bruce Rae, Gaelle Palmigiani, Stuart McLeod
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Patent number: 9595552Abstract: A method of simultaneously manufacturing First and second pixels respectively shielded on a first and on a second side are simultaneously manufactured using a process wherein a first insulator is deposited on an active area. A first metal level is deposited and defined, with a first mask, to form a shield on the first side of the first pixel and on the second side of the second pixel, and a line opposite to the shield. A second insulator is deposited, and via openings therein are defined, with a second mask. An overlying second metal level is deposited and defined, with a third mask, to form two connection areas covering the via openings on each side of the first and second pixels. The second and third masks are identical for the first and second pixels.Type: GrantFiled: March 9, 2015Date of Patent: March 14, 2017Assignee: STMICROELECTRONICS (GRENOBLE 2) SASInventors: Flavien Hirigoyen, Emilie Huss
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Publication number: 20170033151Abstract: A method of simultaneously manufacturing First and second pixels respectively shielded on a first and on a second side are simultaneously manufactured using a process wherein a first insulator is deposited on an active area. A first metal level is deposited and defined, with a first mask, to form a shield on the first side of the first pixel and on the second side of the second pixel, and a line opposite to the shield. A second insulator is deposited, and via openings therein are defined, with a second mask. An overlying second metal level is deposited and defined, with a third mask, to form two connection areas covering the via openings on each side of the first and second pixels. The second and third masks are identical for the first and second pixels.Type: ApplicationFiled: October 11, 2016Publication date: February 2, 2017Applicant: STMicroelectronics (Grenoble 2) SASInventors: Flavien Hirigoyen, Emilie Huss
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Patent number: 9521304Abstract: An image sensor pixel may include an array of four photosites, a transverse isolator wall separating the array in two rows of two photosites, and a longitudinal isolator wall separating the array in two columns of two photosites. Both ends of the longitudinal wall may be set back relative to the edges of the array. First and second conversion nodes may be arranged in the spaces between the longitudinal wall and the edges of the matrix. Each conversion node may be common to two adjacent photosites, and an independent transfer gate may be between each photosite and the corresponding conversion node.Type: GrantFiled: August 28, 2015Date of Patent: December 13, 2016Assignee: STMICROELECTRONICS (GRENOBLE 2) SASInventors: Flavien Hirigoyen, Emilie Huss
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Publication number: 20160182780Abstract: An image sensor pixel may include an array of four photosites, a transverse isolator wall separating the array in two rows of two photosites, and a longitudinal isolator wall separating the array in two columns of two photosites. Both ends of the longitudinal wall may be set back relative to the edges of the array. First and second conversion nodes may be arranged in the spaces between the longitudinal wall and the edges of the matrix. Each conversion node may be common to two adjacent photosites, and an independent transfer gate may be between each photosite and the corresponding conversion node.Type: ApplicationFiled: August 28, 2015Publication date: June 23, 2016Inventors: Flavien Hirigoyen, Emilie Huss
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Patent number: 9299733Abstract: An image sensor is formed by a pixel array including a plurality of pixels. Certain ones of the pixels include, above their active areas, a first optical grating formed of periodically spaced apart parallel strips separated from the active area by a first insulator. Those pixels further include, in another metal level, a second optical grating formed of periodically spaced apart parallel strips separated from the first grating by a second insulator. The second optical grating is laterally shifted with respect to the first grating in a direction orthogonal to a longitudinal direction of the parallel strips.Type: GrantFiled: March 17, 2015Date of Patent: March 29, 2016Assignee: STMicroelectronics (Grenoble 2) SASInventor: Flavien Hirigoyen
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Publication number: 20160064579Abstract: A Single-Photon Avalanche Diode (SPAD) device an active region configured to detect incident radiation, a first radiation blocking ring surrounding the active region, and a radiation blocking cover configured to shield part of the active region from the incident radiation. The radiation blocking cover is configured to define a second radiation blocking ring vertically spaced apart from the first radiation blocking ring. The SPAD device may include radiation blocking vias extending between the first and second radiation blocking rings.Type: ApplicationFiled: September 30, 2015Publication date: March 3, 2016Inventors: Flavien HIRIGOYEN, Bruce RAE, Gaelle PALMIGIANI, Stuart MCLEOD
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Publication number: 20150349010Abstract: An image sensor is formed by a pixel array including a plurality of pixels. Certain ones of the pixels include, above their active areas, a first optical grating formed of periodically spaced apart parallel strips separated from the active area by a first insulator. Those pixels further include, in another metal level, a second optical grating formed of periodically spaced apart parallel strips separated from the first grating by a second insulator. The second optical grating is laterally shifted with respect to the first grating in a direction orthogonal to a longitudinal direction of the parallel strips.Type: ApplicationFiled: March 17, 2015Publication date: December 3, 2015Applicant: STMicroelectronics (Grenoble 2) SASInventor: Flavien Hirigoyen
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Publication number: 20150295003Abstract: A method of simultaneously manufacturing First and second pixels respectively shielded on a first and on a second side are simultaneously manufactured using a process wherein a first insulator is deposited on an active area. A first metal level is deposited and defined, with a first mask, to form a shield on the first side of the first pixel and on the second side of the second pixel, and a line opposite to the shield. A second insulator is deposited, and via openings therein are defined, with a second mask. An overlying second metal level is deposited and defined, with a third mask, to form two connection areas covering the via openings on each side of the first and second pixels. The second and third masks are identical for the first and second pixels.Type: ApplicationFiled: March 9, 2015Publication date: October 15, 2015Applicant: STMICROELECTRONICS (GRENOBLE 2) SASInventors: Flavien Hirigoyen, Emilie Huss
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Patent number: 9099580Abstract: An elementary image acquisition or display device, including a focusing structure with microlenses, each microlens being shaped to focus incident light beams towards a substrate while avoiding intermediate conductive tracks and vias.Type: GrantFiled: April 18, 2012Date of Patent: August 4, 2015Assignee: STMicroelectronics S.A.Inventors: Flavien Hirigoyen, Axel Crocherie
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Patent number: 9052560Abstract: A nanoprojector panel formed of an array of cells, each cell including a liquid crystal layer between upper and lower transparent electrodes, a MOS control transistor being arranged above the upper electrode, each transistor being covered with at least three metallization levels. The transistor of each cell extends in a corner of the cell so that the transistors of an assembly of four adjacent cells are arranged in a central region of the assembly. The upper metallization level extends above the transistors of each the assembly of four adjacent cells. The panel includes, for each assembly of four adjacent cells, a first conductive ring surrounding the transistors, the first ring extending from the lower metallization level to the upper electrode of each cell, with an interposed insulating material.Type: GrantFiled: June 18, 2013Date of Patent: June 9, 2015Assignees: STMicroelectronics SA, Commisariat A L'Energie Atomique et aux Energies AlternativesInventors: Michel Marty, Flavien Hirigoyen, Josep Segura Puchades, Hélène Wehbe-Alause, Umberto Rossini
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Patent number: 8674283Abstract: A method of fabricating an image sensor includes the steps of: forming at least two photosites in a semiconductor substrate; forming a trench between the photosites; forming a thin liner on at least the sidewalls of the trench; depositing a conductive material having a first refractive index in the trench; and forming a region surrounded by the conductive material and having a second refractive index lower than the first index of refraction within the conductive material in the trench.Type: GrantFiled: December 21, 2011Date of Patent: March 18, 2014Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SAInventors: Francois Roy, Flavien Hirigoyen, Julien Michelot
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Patent number: 8664578Abstract: An image sensor having a semiconductor substrate, at least two photosites in the substrate and an isolation region between the photosites. The isolation region has a first trench covered by a thin electrically insulating liner and filled with an electrically conductive material, the conductive material has a second trench at least partially filled with an optically isolating material.Type: GrantFiled: December 21, 2011Date of Patent: March 4, 2014Assignee: STMicroelectronics SAInventors: Flavien Hirigoyen, Julien Michelot
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Publication number: 20130335666Abstract: A nanoprojector panel formed of an array of cells, each cell including a liquid crystal layer between upper and lower transparent electrodes, a MOS control transistor being arranged above the upper electrode, each transistor being covered with at least three metallization levels. The transistor of each cell extends in a corner of the cell so that the transistors of an assembly of four adjacent cells are arranged in a central region of the assembly. The upper metallization level extends above the transistors of each the assembly of four adjacent cells. The panel includes, for each assembly of four adjacent cells, a first conductive ring surrounding the transistors, the first ring extending from the lower metallization level to the upper electrode of each cell, with an interposed insulating material.Type: ApplicationFiled: June 18, 2013Publication date: December 19, 2013Inventors: Michel Marty, Flavien Hirigoyen, Josep Segura Puchades, Hélène Wehbe-Alause, Umberto Rossini
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Publication number: 20120262635Abstract: An elementary image acquisition or display device, including a focusing structure with microlenses, each microlens being shaped to focus incident light beams towards a substrate while avoiding intermediate conductive tracks and vias.Type: ApplicationFiled: April 18, 2012Publication date: October 18, 2012Applicant: STMicroelectronics S.A.Inventors: Flavien Hirigoyen, Axel Crocherie
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Publication number: 20120153128Abstract: A method of fabricating an image sensor includes the steps of: forming at least two photosites in a semiconductor substrate; forming a trench between the photosites; forming a thin liner on at least the sidewalls of the trench; depositing a conductive material having a first refractive index in the trench; and forming a region surrounded by the conductive material and having a second refractive index lower than the first index of refraction within the conductive material in the trench.Type: ApplicationFiled: December 21, 2011Publication date: June 21, 2012Applicants: STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SASInventors: Francois Roy, Flavien Hirigoyen, Julien Michelot
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Publication number: 20120153127Abstract: An image sensor having a semiconductor substrate, at least two photosites in the substrate and an isolation region between the photosites. The isolation region has a first trench covered by a thin electrically insulating liner and filled with an electrically conductive material, the conductive material has a second trench at least partially filled with an optically isolating material.Type: ApplicationFiled: December 21, 2011Publication date: June 21, 2012Applicant: STMICROELECTRONICS SAInventors: Flavien Hirigoyen, Julien Michelot