Abstract: A capacitor structure or an array of capacitors and a method of fabricating the structure utilize the contours of a cavity created in a layer stack to form two three-dimensional electrode plates. The three-dimensional electrode plates reduce the lateral size of the capacitor structure. The fabrication of the capacitor structure is compatible to conventional CMOS processing technology, in which the resulting capacitor structure may become embedded in a CMOS device. As an example, the capacitor structure may be fabricated along with a MOS transistor to produce a one-transistor-one-capacitor nonvolatile memory cell. Preferably, the three-dimensional electrode plates are made of platinum (Pt) or iridium (Ir) and the capacitor dielectric is a ferrous-electric material, such as lead-zirconate-titanate (PZT) or barium-strontium-titanate (BST).

Abstract: A gradient interpenetrating polymer network electrolyte for rechargeable electrochemical cell, and a rechargeable electrochemical cell including said electrolyte. The interpenetrating polymer network electrolyte consists of a first polymeric material having a first set of electrochemical and morphological characteristics, and a second polymeric material having a second set of electrochemical and morphological characteristics. A rechargeable electrochemical cell is made by disposing the interpenetrating polymer network electrolyte between a positive and a negative electrode.